Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~175°C TJ
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	3.8W Ta 88W Tc
Element Configuration	Single
Turn Off Delay Time	28 ns
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Mounting Type	Surface Mount
Mount	Surface Mount
Fall Time (Typ)	15 ns
FET Type	N-Channel
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	250V
Vgs (Max)	±20V
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	8.4 ns
Input Capacitance	620pF
Drain to Source Resistance	435mOhm
Rds On Max	435 mΩ
Height	4.83mm
Length	10.67mm
Width	9.65mm
Rds On (Max) @ Id, Vgs	435mOhm @ 4.8A, 10V
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Element Configuration	Single
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	8.1A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	3.1W Ta 74W Tc
Turn Off Delay Time	42 ns
Packaging	Tube
Published	2016
Operating Temperature	-55°C~150°C TJ
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	250V
Current Rating	8.1A
Number of Channels	1
Mounting Type	Surface Mount
Mount	Surface Mount
Continuous Drain Current (ID)	8.1A
Gate to Source Voltage (Vgs)	20V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	250V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
FET Type	N-Channel
Turn On Delay Time	9.6 ns
Input Capacitance	770pF
Drain to Source Resistance	450mOhm
Rds On Max	450 mΩ
Height	4.83mm
Length	10.67mm
Width	9.02mm
RoHS Status	Non-RoHS Compliant
Rds On (Max) @ Id, Vgs	450mOhm @ 5.1A, 10V
Lead Free	Contains Lead

Manufacturer	Vishay Siliconix
Turn Off Delay Time	42 ns
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	8.1A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Element Configuration	Single
Power Dissipation (Max)	3.1W Ta 74W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Mount	Surface Mount
Factory Lead Time	8 Weeks
Fall Time (Typ)	19 ns
Turn On Delay Time	9.6 ns
Rds On (Max) @ Id, Vgs	450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	250V
Vgs (Max)	±20V
Continuous Drain Current (ID)	8.1A
Gate to Source Voltage (Vgs)	20V
Power Dissipation	3.1W
Input Capacitance	770pF
Drain to Source Resistance	450mOhm
Rds On Max	450 mΩ
Height	4.83mm
Length	10.67mm
Width	9.02mm
Radiation Hardening	No

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	18A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	125W Tc
Element Configuration	Single
Factory Lead Time	8 Weeks
Packaging	Bulk
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	180mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Current Rating	18A
Number of Channels	1
Turn Off Delay Time	45 ns
Power Dissipation	125W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	51ns
Drain to Source Voltage (Vdss)	200V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	4V
Turn On Delay Time	14 ns
FET Type	N-Channel

Discrete Semiconductors