Manufacturer	Vishay Siliconix
Turn Off Delay Time	30 ns
Mount	Through Hole
Mounting Type	Through Hole
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	3.3A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Element Configuration	Single
Factory Lead Time	12 Weeks
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Number of Channels	1
Power Dissipation (Max)	3.1W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	400V
Case Connection	DRAIN
Turn On Delay Time	10 ns
Continuous Drain Current (ID)	3.3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	400V
Height	9.01mm
Length	10.41mm

Manufacturer	Vishay Siliconix
Mount	Through Hole
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Current - Continuous Drain (Id) @ 25℃	5.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	74W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Drain to Source Voltage (Vdss)	400V
Vgs (Max)	±30V
Continuous Drain Current (ID)	5.5A
Input Capacitance	600pF
Rds On Max	1 Ω
RoHS Status	Non-RoHS Compliant

Manufacturer	Vishay Siliconix
Configuration	SINGLE WITH BUILT-IN DIODE
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	6A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	104W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Turn Off Delay Time	14 ns
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	MATTE TIN OVER NICKEL
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T3
Mount	Through Hole
Factory Lead Time	8 Weeks
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	6A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	311pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	400V
Vgs (Max)	±30V
Turn On Delay Time	12 ns
Operating Mode	ENHANCEMENT MODE
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	1Ohm
Pulsed Drain Current-Max (IDM)	13A
DS Breakdown Voltage-Min	400V

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mounting Type	Through Hole
Number of Pins	3
Supplier Device Package	I2PAK
Weight	2.387001g
Current - Continuous Drain (Id) @ 25℃	10A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	3.1W Ta 125W Tc
Power Dissipation	3.1W
Mount	Through Hole
Packaging	Tube
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	550mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Turn Off Delay Time	24 ns
Turn On Delay Time	10 ns
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	400V
Vgs (Max)	±30V
Fall Time (Typ)	22 ns
Continuous Drain Current (ID)	10A
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	550mOhm @ 6A, 10V
Drain to Source Breakdown Voltage	400V
Input Capacitance	1.03nF
Drain to Source Resistance	550mOhm
Rds On Max	550 mΩ
Height	9.65mm

Discrete Semiconductors