Showing 14281–14292 of 15245 results

Discrete Semiconductors

Vishay Siliconix IRF830

In stock

SKU: IRF830-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

42 ns

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Weight

6.000006g

Current - Continuous Drain (Id) @ 25℃

4.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Number of Channels

1

Mount

Through Hole

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2016

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-65°C

Voltage - Rated DC

500V

Current Rating

4.5A

Power Dissipation (Max)

74W Tc

Element Configuration

Single

Fall Time (Typ)

5 ns

Continuous Drain Current (ID)

4.5A

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Rise Time

8ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±20V

Power Dissipation

74W

Turn On Delay Time

8.2 ns

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

500V

Input Capacitance

610pF

Drain to Source Resistance

1.5Ohm

Rds On Max

1.5 Ω

Height

9.01mm

Length

10.4mm

Width

4.6mm

RoHS Status

Non-RoHS Compliant

Lead Free

Contains Lead

Vishay Siliconix IRF830APBF

In stock

SKU: IRF830APBF-11
Manufacturer

Vishay Siliconix

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Weight

6.000006g

Current - Continuous Drain (Id) @ 25℃

5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

74W Tc

Turn Off Delay Time

21 ns

Current

5A

Operating Temperature

-55°C~150°C TJ

Published

2008

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

1.4Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

500V

Current Rating

5A

Number of Channels

1

Voltage

500V

Element Configuration

Single

Mount

Through Hole

Factory Lead Time

12 Weeks

Gate to Source Voltage (Vgs)

30V

Turn On Delay Time

10 ns

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Rise Time

21ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±30V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

5A

Threshold Voltage

4.5V

Drain to Source Breakdown Voltage

500V

Input Capacitance

620pF

Power Dissipation

74W

Recovery Time

650 ns

Drain to Source Resistance

1.4Ohm

Rds On Max

1.4 Ω

Nominal Vgs

4.5 V

Height

9.01mm

Length

10.41mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

Vishay Siliconix IRF830ASPBF

In stock

SKU: IRF830ASPBF-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D2PAK

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.1W Ta 74W Tc

Element Configuration

Single

Factory Lead Time

11 Weeks

Packaging

Tube

Published

2011

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Resistance

1.4Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Turn Off Delay Time

21 ns

Power Dissipation

3.1W

Gate to Source Voltage (Vgs)

30V

Dual Supply Voltage

500V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Rise Time

21ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±30V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

5A

Turn On Delay Time

10 ns

FET Type

N-Channel

Input Capacitance

620pF

Drain to Source Resistance

1.4Ohm

Rds On Max

1.4 Ω

Nominal Vgs

4.5 V

Height

4.83mm

Length

10.67mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix IRF830ASTRLPBF

In stock

SKU: IRF830ASTRLPBF-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

21 ns

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D2PAK

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Element Configuration

Single

Factory Lead Time

11 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2013

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

1.4Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Power Dissipation (Max)

74W Tc

Power Dissipation

3.1W

Continuous Drain Current (ID)

5A

Gate to Source Voltage (Vgs)

30V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Rise Time

21ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±30V

Fall Time (Typ)

15 ns

Turn On Delay Time

10 ns

FET Type

N-Channel

Drain to Source Breakdown Voltage

500V

Input Capacitance

620pF

Drain to Source Resistance

1.4Ohm

Rds On Max

1.4 Ω

Height

4.83mm

Length

10.67mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix IRF830BPBF

In stock

SKU: IRF830BPBF-11
Manufacturer

Vishay Siliconix

Number of Terminations

3

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.3A Tc

Number of Elements

1

Power Dissipation (Max)

104W Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Turn Off Delay Time

42 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2011

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Through Hole

Factory Lead Time

8 Weeks

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Rise Time

16ns

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

8.2 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.5 Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 100V

Number of Channels

1

Terminal Finish

MATTE TIN OVER NICKEL

Vgs (Max)

±30V

Fall Time (Typ)

16 ns

Continuous Drain Current (ID)

5.3A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

500V

Radiation Hardening

No

Element Configuration

Single

RoHS Status

ROHS3 Compliant

Vishay Siliconix IRF830L

In stock

SKU: IRF830L-11
Manufacturer

Vishay Siliconix

Reach Compliance Code

unknown

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Power Dissipation (Max)

3.1W Ta 74W Tc

Published

2016

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

Configuration

SINGLE

Number of Channels

1

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.5 Ω @ 2.7A, 10V

JESD-30 Code

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±20V

Continuous Drain Current (ID)

4.5A

JEDEC-95 Code

TO-220AB

DS Breakdown Voltage-Min

500V

Qualification Status

Not Qualified

RoHS Status

Non-RoHS Compliant

Vishay Siliconix IRF830LPBF

In stock

SKU: IRF830LPBF-11
Manufacturer

Vishay Siliconix

Element Configuration

Single

Mounting Type

Through Hole

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Turn Off Delay Time

42 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

3.1W Ta 74W Tc

Packaging

Tube

Published

2017

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Resistance

1.5Ohm

Number of Channels

1

Mount

Through Hole

Factory Lead Time

12 Weeks

Continuous Drain Current (ID)

11A

JEDEC-95 Code

TO-220AB

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.5 Ω @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Rise Time

16ns

Vgs (Max)

±20V

Fall Time (Typ)

16 ns

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

4.5A

Drain to Source Breakdown Voltage

500V

Height

9.01mm

Length

10.41mm

Width

4.7mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Turn On Delay Time

8.2 ns

Lead Free

Lead Free

Vishay Siliconix IRF830SPBF

In stock

SKU: IRF830SPBF-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D2PAK

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

4.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.1W Ta 74W Tc

Number of Channels

1

Factory Lead Time

11 Weeks

Packaging

Tube

Published

2016

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

1.5Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

500V

Current Rating

1.5A

Turn Off Delay Time

42 ns

Element Configuration

Single

Continuous Drain Current (ID)

4.5A

Gate to Source Voltage (Vgs)

20V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Rise Time

16ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±20V

Fall Time (Typ)

16 ns

Power Dissipation

3.1W

Turn On Delay Time

8.2 ns

Drain to Source Breakdown Voltage

500V

Input Capacitance

610pF

Drain to Source Resistance

1.5Ohm

Rds On Max

1.5 Ω

Height

4.83mm

Length

10.67mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix IRF830STRLPBF

In stock

SKU: IRF830STRLPBF-11
Manufacturer

Vishay Siliconix

Element Configuration

Single

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D2PAK

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

4.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Turn Off Delay Time

42 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

74W Tc

Packaging

Tape & Reel (TR)

Published

2017

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

1.5Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Mount

Surface Mount

Factory Lead Time

11 Weeks

Continuous Drain Current (ID)

4.5A

Gate to Source Voltage (Vgs)

20V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Rise Time

16ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±20V

Fall Time (Typ)

16 ns

Turn On Delay Time

8.2 ns

Power Dissipation

3.1W

Input Capacitance

610pF

Drain to Source Resistance

1.5Ohm

Rds On Max

1.5 Ω

Height

4.83mm

Length

10.67mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

Vishay Siliconix IRF840

In stock

SKU: IRF840-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Weight

6.000006g

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

125W Tc

Element Configuration

Single

Turn Off Delay Time

49 ns

Packaging

Tube

Published

2011

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

500V

Current Rating

8A

Number of Channels

1

Mounting Type

Through Hole

Mount

Through Hole

Continuous Drain Current (ID)

8A

Turn On Delay Time

14 ns

Rds On (Max) @ Id, Vgs

850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Rise Time

23ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

500V

Power Dissipation

125W

Input Capacitance

1.3nF

Drain to Source Resistance

850mOhm

Rds On Max

850 mΩ

Height

9.01mm

Length

10.41mm

Width

4.7mm

Radiation Hardening

No

RoHS Status

Non-RoHS Compliant

FET Type

N-Channel

Lead Free

Contains Lead

Vishay Siliconix IRF840A

In stock

SKU: IRF840A-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Weight

6.000006g

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

125W Tc

Element Configuration

Single

Turn Off Delay Time

26 ns

Packaging

Tube

Published

2011

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

500V

Current Rating

8A

Number of Channels

1

Mounting Type

Through Hole

Mount

Through Hole

Continuous Drain Current (ID)

8A

Turn On Delay Time

11 ns

Rds On (Max) @ Id, Vgs

850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1018pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Rise Time

23ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±30V

Fall Time (Typ)

19 ns

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

500V

Power Dissipation

125W

Input Capacitance

1.018nF

Drain to Source Resistance

850mOhm

Rds On Max

850 mΩ

Height

9.01mm

Length

10.41mm

Width

4.7mm

Radiation Hardening

No

RoHS Status

Non-RoHS Compliant

FET Type

N-Channel

Lead Free

Contains Lead

Vishay Siliconix IRF840AS

In stock

SKU: IRF840AS-11
Manufacturer

Vishay Siliconix

Packaging

Tube

Number of Pins

3

Supplier Device Package

D2PAK

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

3.1W Ta 125W Tc

Turn Off Delay Time

26 ns

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Published

2016

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

500V

Current Rating

8A

Number of Channels

1

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

8A

FET Type

N-Channel

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1018pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Rise Time

23ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±30V

Fall Time (Typ)

19 ns

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

500V

Turn On Delay Time

11 ns

Input Capacitance

1.018nF

Drain to Source Resistance

850mOhm

Rds On Max

850 mΩ

Height

4.83mm

Length

10.67mm

Width

9.65mm

RoHS Status

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs

850mOhm @ 4.8A, 10V

Lead Free

Contains Lead