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Discrete Semiconductors
Vishay Siliconix IRF830
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
42 ns |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Number of Channels |
1 |
Mount |
Through Hole |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2016 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-65°C |
Voltage - Rated DC |
500V |
Current Rating |
4.5A |
Power Dissipation (Max) |
74W Tc |
Element Configuration |
Single |
Fall Time (Typ) |
5 ns |
Continuous Drain Current (ID) |
4.5A |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 2.7A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
610pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
8ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±20V |
Power Dissipation |
74W |
Turn On Delay Time |
8.2 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
500V |
Input Capacitance |
610pF |
Drain to Source Resistance |
1.5Ohm |
Rds On Max |
1.5 Ω |
Height |
9.01mm |
Length |
10.4mm |
Width |
4.6mm |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
Vishay Siliconix IRF830APBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
74W Tc |
Turn Off Delay Time |
21 ns |
Current |
5A |
Operating Temperature |
-55°C~150°C TJ |
Published |
2008 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
1.4Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
500V |
Current Rating |
5A |
Number of Channels |
1 |
Voltage |
500V |
Element Configuration |
Single |
Mount |
Through Hole |
Factory Lead Time |
12 Weeks |
Gate to Source Voltage (Vgs) |
30V |
Turn On Delay Time |
10 ns |
Rds On (Max) @ Id, Vgs |
1.4Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
21ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
5A |
Threshold Voltage |
4.5V |
Drain to Source Breakdown Voltage |
500V |
Input Capacitance |
620pF |
Power Dissipation |
74W |
Recovery Time |
650 ns |
Drain to Source Resistance |
1.4Ohm |
Rds On Max |
1.4 Ω |
Nominal Vgs |
4.5 V |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
Vishay Siliconix IRF830ASPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.1W Ta 74W Tc |
Element Configuration |
Single |
Factory Lead Time |
11 Weeks |
Packaging |
Tube |
Published |
2011 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Termination |
SMD/SMT |
Resistance |
1.4Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Turn Off Delay Time |
21 ns |
Power Dissipation |
3.1W |
Gate to Source Voltage (Vgs) |
30V |
Dual Supply Voltage |
500V |
Rds On (Max) @ Id, Vgs |
1.4Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
21ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
5A |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Input Capacitance |
620pF |
Drain to Source Resistance |
1.4Ohm |
Rds On Max |
1.4 Ω |
Nominal Vgs |
4.5 V |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix IRF830ASTRLPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
21 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Element Configuration |
Single |
Factory Lead Time |
11 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
1.4Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Power Dissipation (Max) |
74W Tc |
Power Dissipation |
3.1W |
Continuous Drain Current (ID) |
5A |
Gate to Source Voltage (Vgs) |
30V |
Rds On (Max) @ Id, Vgs |
1.4Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
21ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
15 ns |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Drain to Source Breakdown Voltage |
500V |
Input Capacitance |
620pF |
Drain to Source Resistance |
1.4Ohm |
Rds On Max |
1.4 Ω |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix IRF830BPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Number of Terminations |
3 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.3A Tc |
Number of Elements |
1 |
Power Dissipation (Max) |
104W Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Turn Off Delay Time |
42 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2011 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Rise Time |
16ns |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
8.2 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
325pF @ 100V |
Number of Channels |
1 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Vgs (Max) |
±30V |
Fall Time (Typ) |
16 ns |
Continuous Drain Current (ID) |
5.3A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
500V |
Radiation Hardening |
No |
Element Configuration |
Single |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRF830L
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Reach Compliance Code |
unknown |
Weight |
1.437803g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Power Dissipation (Max) |
3.1W Ta 74W Tc |
Published |
2016 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
610pF @ 25V |
Configuration |
SINGLE |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.7A, 10V |
JESD-30 Code |
R-PSFM-T3 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
4.5A |
JEDEC-95 Code |
TO-220AB |
DS Breakdown Voltage-Min |
500V |
Qualification Status |
Not Qualified |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF830LPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Element Configuration |
Single |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Turn Off Delay Time |
42 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
3.1W Ta 74W Tc |
Packaging |
Tube |
Published |
2017 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Resistance |
1.5Ohm |
Number of Channels |
1 |
Mount |
Through Hole |
Factory Lead Time |
12 Weeks |
Continuous Drain Current (ID) |
11A |
JEDEC-95 Code |
TO-220AB |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.7A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
610pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
16ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
16 ns |
Case Connection |
DRAIN |
Operating Mode |
ENHANCEMENT MODE |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
4.5A |
Drain to Source Breakdown Voltage |
500V |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
8.2 ns |
Lead Free |
Lead Free |
Vishay Siliconix IRF830SPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.1W Ta 74W Tc |
Number of Channels |
1 |
Factory Lead Time |
11 Weeks |
Packaging |
Tube |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
1.5Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
500V |
Current Rating |
1.5A |
Turn Off Delay Time |
42 ns |
Element Configuration |
Single |
Continuous Drain Current (ID) |
4.5A |
Gate to Source Voltage (Vgs) |
20V |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 2.7A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
610pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
16ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
16 ns |
Power Dissipation |
3.1W |
Turn On Delay Time |
8.2 ns |
Drain to Source Breakdown Voltage |
500V |
Input Capacitance |
610pF |
Drain to Source Resistance |
1.5Ohm |
Rds On Max |
1.5 Ω |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix IRF830STRLPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Turn Off Delay Time |
42 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
74W Tc |
Packaging |
Tape & Reel (TR) |
Published |
2017 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
1.5Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Mount |
Surface Mount |
Factory Lead Time |
11 Weeks |
Continuous Drain Current (ID) |
4.5A |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 2.7A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
610pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
16ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
16 ns |
Turn On Delay Time |
8.2 ns |
Power Dissipation |
3.1W |
Input Capacitance |
610pF |
Drain to Source Resistance |
1.5Ohm |
Rds On Max |
1.5 Ω |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
Vishay Siliconix IRF840
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
125W Tc |
Element Configuration |
Single |
Turn Off Delay Time |
49 ns |
Packaging |
Tube |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
500V |
Current Rating |
8A |
Number of Channels |
1 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Continuous Drain Current (ID) |
8A |
Turn On Delay Time |
14 ns |
Rds On (Max) @ Id, Vgs |
850mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
Rise Time |
23ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
20 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
500V |
Power Dissipation |
125W |
Input Capacitance |
1.3nF |
Drain to Source Resistance |
850mOhm |
Rds On Max |
850 mΩ |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
FET Type |
N-Channel |
Lead Free |
Contains Lead |
Vishay Siliconix IRF840A
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
125W Tc |
Element Configuration |
Single |
Turn Off Delay Time |
26 ns |
Packaging |
Tube |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
500V |
Current Rating |
8A |
Number of Channels |
1 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Continuous Drain Current (ID) |
8A |
Turn On Delay Time |
11 ns |
Rds On (Max) @ Id, Vgs |
850mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1018pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
23ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
19 ns |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
500V |
Power Dissipation |
125W |
Input Capacitance |
1.018nF |
Drain to Source Resistance |
850mOhm |
Rds On Max |
850 mΩ |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
FET Type |
N-Channel |
Lead Free |
Contains Lead |
Vishay Siliconix IRF840AS
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tube |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
3.1W Ta 125W Tc |
Turn Off Delay Time |
26 ns |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Published |
2016 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
500V |
Current Rating |
8A |
Number of Channels |
1 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
8A |
FET Type |
N-Channel |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1018pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
23ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
19 ns |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
500V |
Turn On Delay Time |
11 ns |
Input Capacitance |
1.018nF |
Drain to Source Resistance |
850mOhm |
Rds On Max |
850 mΩ |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
RoHS Status |
Non-RoHS Compliant |
Rds On (Max) @ Id, Vgs |
850mOhm @ 4.8A, 10V |
Lead Free |
Contains Lead |