Manufacturer	Vishay Siliconix
Power Dissipation (Max)	125W Tc
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	8A Tc
Number of Channels	1
Factory Lead Time	13 Weeks
Turn Off Delay Time	27 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Drive Voltage (Max Rds On, Min Rds On)	10V
Element Configuration	Single
Fall Time (Typ)	19 ns
Continuous Drain Current (ID)	8A
Rds On (Max) @ Id, Vgs	850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	500V
Vgs (Max)	±30V
Turn On Delay Time	12 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	1.1nF
Drain to Source Resistance	650mOhm
Rds On Max	850 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm

Manufacturer	Vishay Siliconix
Pin Count	3
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	3.1W Ta 125W Tc
Turn Off Delay Time	27 ns
Packaging	Tape & Reel (TR)
Published	2016
Operating Temperature	-55°C~150°C TJ
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Mount	Surface Mount
Factory Lead Time	12 Weeks
Drain to Source Voltage (Vdss)	500V
Vgs (Max)	±30V
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	25ns
Number of Channels	1
JESD-30 Code	S-PSSO-G2

Manufacturer	Vishay Siliconix
Packaging	Tube
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	125W Tc
Turn Off Delay Time	49 ns
Pin Count	3
Factory Lead Time	11 Weeks
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Operating Temperature	-55°C~150°C TJ
Number of Channels	1
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Power Dissipation	125W
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	500V
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE

Manufacturer	Vishay Siliconix
Packaging	Tube
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	3.1W Ta 125W Tc
Turn Off Delay Time	49 ns
Turn On Delay Time	14 ns
Factory Lead Time	11 Weeks
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	850mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Power Dissipation	3.1W
Operating Temperature	-55°C~150°C TJ
FET Type	N-Channel
Dual Supply Voltage	500V
Input Capacitance	1.3nF
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	500V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Rds On (Max) @ Id, Vgs	850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA

Discrete Semiconductors