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Discrete Semiconductors
Vishay Siliconix IRF9610PBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation |
20W |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
20W Tc |
Turn Off Delay Time |
10 ns |
Packaging |
Tube |
Published |
2008 |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
3Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
-200V |
Current Rating |
-1.8A |
Number of Channels |
1 |
Voltage |
200V |
Element Configuration |
Single |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Drain to Source Breakdown Voltage |
-200V |
Input Capacitance |
170pF |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
170pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
Rise Time |
15ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
-1.8A |
Threshold Voltage |
-4V |
Gate to Source Voltage (Vgs) |
20V |
FET Type |
P-Channel |
Turn On Delay Time |
8 ns |
Recovery Time |
360 ns |
Drain to Source Resistance |
3Ohm |
Rds On Max |
3 Ω |
Nominal Vgs |
-4 V |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Rds On (Max) @ Id, Vgs |
3Ohm @ 900mA, 10V |
Lead Free |
Lead Free |
Vishay Siliconix IRF9610SPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3W Ta 20W Tc |
Turn On Delay Time |
8 ns |
Turn Off Delay Time |
1 ns |
Packaging |
Tube |
Published |
2011 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Element Configuration |
Single |
Power Dissipation |
3W |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
3Ohm @ 900mA, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
170pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
Rise Time |
15ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
-1.8A |
Threshold Voltage |
-4V |
Drain to Source Breakdown Voltage |
-200V |
Input Capacitance |
170pF |
FET Type |
P-Channel |
Drain to Source Resistance |
3Ohm |
Rds On Max |
3 Ω |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Lead Free |
Lead Free |
Vishay Siliconix IRF9620
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
20 ns |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
3.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Element Configuration |
Single |
Mount |
Through Hole |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Power Dissipation (Max) |
40W Tc |
Power Dissipation |
40W |
Continuous Drain Current (ID) |
3.5A |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Rise Time |
25ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
15 ns |
Turn On Delay Time |
15 ns |
FET Type |
P-Channel |
Drain to Source Breakdown Voltage |
-200V |
Input Capacitance |
350pF |
Drain to Source Resistance |
1.5Ohm |
Rds On Max |
1.5 Ω |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF9620STRL
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
3.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
3W Ta 40W Tc |
Element Configuration |
Single |
Turn Off Delay Time |
20 ns |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Fall Time (Typ) |
15 ns |
FET Type |
P-Channel |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Rise Time |
25ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
3.5A |
Gate to Source Voltage (Vgs) |
20V |
Turn On Delay Time |
15 ns |
Input Capacitance |
350pF |
Drain to Source Resistance |
1.5Ohm |
Rds On Max |
1.5 Ω |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1.5A, 10V |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF9620STRLPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
3.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
3W Ta 40W Tc |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
1.5Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Turn Off Delay Time |
20 ns |
Turn On Delay Time |
15 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-200V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Rise Time |
25ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
-3.5A |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1.5A, 10V |
Input Capacitance |
350pF |
Drain to Source Resistance |
1.5Ohm |
Rds On Max |
1.5 Ω |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix IRF9630SPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
28 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation |
3W |
Factory Lead Time |
8 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2011 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Element Configuration |
Single |
Power Dissipation (Max) |
3W Ta 74W Tc |
Turn On Delay Time |
12 ns |
Threshold Voltage |
-4V |
Gate to Source Voltage (Vgs) |
20V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Rise Time |
27ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
24 ns |
Continuous Drain Current (ID) |
6.5A |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
800mOhm @ 3.9A, 10V |
Drain to Source Breakdown Voltage |
-200V |
Input Capacitance |
700pF |
Drain to Source Resistance |
300mOhm |
Rds On Max |
800 mΩ |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.02mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRF9630STRL
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
3W Ta 74W Tc |
Turn Off Delay Time |
28 ns |
Turn On Delay Time |
12 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2016 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
6.5A |
Rds On (Max) @ Id, Vgs |
800mOhm @ 3.9A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Rise Time |
27ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
24 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-200V |
FET Type |
P-Channel |
Input Capacitance |
700pF |
Drain to Source Resistance |
800mOhm |
Rds On Max |
800 mΩ |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.02mm |
Vgs(th) (Max) @ Id |
4V @ 250μA |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF9630STRLPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Published |
2013 |
Contact Plating |
Tin |
Mount |
Surface Mount, Through Hole |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.437803g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3W Ta 74W Tc |
Turn Off Delay Time |
28 ns |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSSO-G2 |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
800mOhm |
Additional Feature |
AVALANCHE RATED |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Packaging |
Tape & Reel (TR) |
Number of Channels |
1 |
Fall Time (Typ) |
24 ns |
Continuous Drain Current (ID) |
6.5A |
Power Dissipation |
3W |
Case Connection |
DRAIN |
Turn On Delay Time |
12 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
800m Ω @ 3.9A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Rise Time |
27ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Threshold Voltage |
-2V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-200V |
Pulsed Drain Current-Max (IDM) |
26A |
Dual Supply Voltage |
-200V |
Avalanche Energy Rating (Eas) |
500 mJ |
Nominal Vgs |
4 V |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.02mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix IRF9640
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Number of Channels |
1 |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Turn Off Delay Time |
39 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
125W Tc |
Packaging |
Tube |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
-200V |
Current Rating |
-11A |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Fall Time (Typ) |
38 ns |
Continuous Drain Current (ID) |
11A |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
500mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
Rise Time |
43ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Power Dissipation |
125W |
Element Configuration |
Single |
Gate to Source Voltage (Vgs) |
20V |
Input Capacitance |
1.2nF |
Drain to Source Resistance |
500mOhm |
Rds On Max |
500 mΩ |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
RoHS Status |
Non-RoHS Compliant |
Turn On Delay Time |
13 ns |
Lead Free |
Contains Lead |
Vishay Siliconix IRF9640STRL
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
3W Ta 125W Tc |
Number of Channels |
1 |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
-200V |
Current Rating |
-11A |
Turn Off Delay Time |
39 ns |
Element Configuration |
Single |
Fall Time (Typ) |
38 ns |
Continuous Drain Current (ID) |
11A |
Rds On (Max) @ Id, Vgs |
500mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
Rise Time |
43ns |
Drain to Source Voltage (Vdss) |
200V |
Vgs (Max) |
±20V |
Turn On Delay Time |
14 ns |
FET Type |
P-Channel |
Gate to Source Voltage (Vgs) |
20V |
Input Capacitance |
1.2nF |
Drain to Source Resistance |
500mOhm |
Rds On Max |
500 mΩ |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
Vishay Siliconix IRF9Z10
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Number of Channels |
1 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Current - Continuous Drain (Id) @ 25℃ |
6.7A Tc |
Power Dissipation (Max) |
43W Tc |
Turn Off Delay Time |
10 ns |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2011 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Fall Time (Typ) |
31 ns |
Continuous Drain Current (ID) |
6.7A |
Rds On (Max) @ Id, Vgs |
500mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
Rise Time |
63ns |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Turn On Delay Time |
11 ns |
Element Configuration |
Single |
Gate to Source Voltage (Vgs) |
20V |
Input Capacitance |
270pF |
Drain to Source Resistance |
500mOhm |
Rds On Max |
500 mΩ |
Height |
9.01mm |
Length |
10.41mm |
Width |
4.7mm |
FET Type |
P-Channel |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF9Z14LPBF
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Element Configuration |
Single |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Supplier Device Package |
I2PAK |
Weight |
2.387001g |
Current - Continuous Drain (Id) @ 25℃ |
6.7A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Turn Off Delay Time |
10 ns |
Operating Temperature |
-55°C~175°C TJ |
Power Dissipation (Max) |
3.7W Ta 43W Tc |
Packaging |
Tube |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Continuous Drain Current (ID) |
6.7A |
Gate to Source Voltage (Vgs) |
20V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
Rise Time |
63ns |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
31 ns |
FET Type |
P-Channel |
Turn On Delay Time |
11 ns |
Input Capacitance |
270pF |
Drain to Source Resistance |
500mOhm |
Rds On Max |
500 mΩ |
Height |
9.65mm |
Length |
10.41mm |
Width |
4.7mm |
Radiation Hardening |
No |
Rds On (Max) @ Id, Vgs |
500mOhm @ 4A, 10V |
RoHS Status |
ROHS3 Compliant |