Manufacturer	Vishay Siliconix
Turn Off Delay Time	10 ns
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	6.7A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation	3.7W
Power Dissipation (Max)	3.7W Ta 43W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Mount	Surface Mount
Factory Lead Time	8 Weeks
Continuous Drain Current (ID)	6.7A
FET Type	P-Channel
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	63ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Turn On Delay Time	11 ns
Input Capacitance	270pF
Drain to Source Resistance	500mOhm
Rds On Max	500 mΩ
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No

Manufacturer	Vishay Siliconix
Turn Off Delay Time	15 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	11A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Element Configuration	Single
Factory Lead Time	12 Weeks
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Power Dissipation (Max)	3.7W Ta 60W Tc
Power Dissipation	3.7W
Continuous Drain Current (ID)	-11A
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	280mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Rise Time	68ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Turn On Delay Time	13 ns
FET Type	P-Channel
Drain to Source Breakdown Voltage	-60V
Input Capacitance	570pF
Drain to Source Resistance	280mOhm
Rds On Max	280 mΩ
Height	4.83mm
Length	10.67mm

Manufacturer	Vishay Siliconix
Element Configuration	Single
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	18A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Turn Off Delay Time	20 ns
Operating Temperature	-55°C~175°C TJ
Power Dissipation (Max)	88W Tc
Packaging	Tube
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Lead Pitch	2.54mm
Number of Channels	1
Mounting Type	Through Hole
Mount	Through Hole
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	120ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	58 ns
Turn On Delay Time	18 ns
Power Dissipation	88W
Drain to Source Breakdown Voltage	-60V
Input Capacitance	1.1nF
Drain to Source Resistance	140mOhm
Rds On Max	140 mΩ
Height	9.01mm
Length	10.41mm

Manufacturer	Vishay Siliconix
Packaging	Tube
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	18A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	3.7W Ta 88W Tc
Turn Off Delay Time	20 ns
JESD-30 Code	R-PSSO-G2
Factory Lead Time	8 Weeks
Published	2005
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	140mOhm
Additional Feature	AVALANCHE RATED
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
Operating Temperature	-55°C~175°C TJ
Number of Channels	1
Vgs (Max)	±20V
Fall Time (Typ)	58 ns
Power Dissipation	3.7W
Turn On Delay Time	18 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	120ns
Drain to Source Voltage (Vdss)	60V
Element Configuration	Single

Discrete Semiconductors