Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	800mA Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Reach Compliance Code	unknown
Mount	Through Hole
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Power Dissipation (Max)	1W Tc
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 800mA, 10V
Pin Count	2
JESD-30 Code	R-PDIP-T2
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Continuous Drain Current (ID)	800mA
Drain Current-Max (Abs) (ID)	0.8A
Drain-source On Resistance-Max	0.8Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	25 pF

Manufacturer	Vishay Siliconix
Power Dissipation (Max)	1W Ta
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Current - Continuous Drain (Id) @ 25℃	630mA Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Min Operating Temperature	-55°C
Number of Elements	1
Turn Off Delay Time	20 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Mount	Through Hole
Factory Lead Time	8 Weeks
Vgs (Max)	±20V
Turn On Delay Time	7 ns
Rds On (Max) @ Id, Vgs	1.1Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	250V
Fall Time (Typ)	13 ns
Continuous Drain Current (ID)	630mA
Power Dissipation	1W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	250V
Input Capacitance	260pF
Drain to Source Resistance	1.1Ohm
Rds On Max	1.1 Ω
Radiation Hardening	No
FET Type	N-Channel
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Turn Off Delay Time	15 ns
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	1.6A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Additional Feature	AVALANCHE RATED
Factory Lead Time	8 Weeks
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	280mOhm
Power Dissipation (Max)	1.3W Ta
Terminal Position	DUAL
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Rise Time	68ns
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 960mA, 10V
Vgs(th) (Max) @ Id	4V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 25V
Pin Count	4
Element Configuration	Single
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	-4V
Gate to Source Voltage (Vgs)	20V

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~175°C TJ
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Current - Continuous Drain (Id) @ 25℃	700mA Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	1.3W Ta
Number of Channels	1
Mount	Through Hole
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-100V
Current Rating	-700mA
Turn Off Delay Time	21 ns
Power Dissipation	1.3W
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 10V
Rise Time	29ns
Drain to Source Voltage (Vdss)	100V
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Turn On Delay Time	9.6 ns
FET Type	P-Channel
Drain to Source Breakdown Voltage	-100V
Input Capacitance	200pF
Drain to Source Resistance	1.2Ohm
Rds On Max	1.2 Ω
Height	3.37mm
Length	5mm

Discrete Semiconductors