Manufacturer	Vishay Siliconix
FET Type	N-Channel
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	14A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	2.5W Ta 42W Tc
Turn Off Delay Time	25 ns
Packaging	Tube
Part Status	Active
Operating Temperature	-55°C~150°C TJ
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	100mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	13 ns
Mount	Surface Mount
Factory Lead Time	8 Weeks
Dual Supply Voltage	60V
Input Capacitance	640pF
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Continuous Drain Current (ID)	14A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Vgs(th) (Max) @ Id	4V @ 250μA
Rds On (Max) @ Id, Vgs	100mOhm @ 8.4A, 10V
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Nominal Vgs	4 V

Manufacturer	Vishay Siliconix
Power Dissipation	2.5W
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	14A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Turn Off Delay Time	25 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation (Max)	2.5W Ta 42W Tc
Packaging	Tape & Reel (TR)
Published	1998
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	100mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	8 Weeks
Gate to Source Voltage (Vgs)	20V
Input Capacitance	640pF
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Continuous Drain Current (ID)	14A
Threshold Voltage	4V
FET Type	N-Channel
Turn On Delay Time	13 ns
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Nominal Vgs	2 V

Manufacturer	Vishay Siliconix
Turn Off Delay Time	15 ns
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	4.3A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Element Configuration	Single
Mount	Surface Mount
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Power Dissipation (Max)	2.5W Ta 25W Tc
Power Dissipation	2.5W
Fall Time (Typ)	9.4 ns
Continuous Drain Current (ID)	4.3A
Rds On (Max) @ Id, Vgs	540mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Vgs (Max)	±20V
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	180pF
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Height	2.39mm
Length	6.73mm
Width	6.22mm

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	4.3A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	2.5W Ta 25W Tc
Number of Channels	1
Mount	Surface Mount
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Current Rating	4.3A
Turn Off Delay Time	15 ns
Element Configuration	Single
Fall Time (Typ)	9.4 ns
Continuous Drain Current (ID)	4.3A
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	540mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Vgs (Max)	±20V
Power Dissipation	2.5W
Turn On Delay Time	6.9 ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	180pF
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Height	2.39mm
Length	6.73mm

Discrete Semiconductors