Showing 14473–14484 of 15245 results
Vishay Siliconix IRFS11N50ATRLP
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263AB |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
170W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
32 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
520mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Continuous Drain Current (ID) |
11A |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1423pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Rise Time |
35ns |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
28 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Turn On Delay Time |
14 ns |
| Input Capacitance |
1.423nF |
| Drain to Source Resistance |
520mOhm |
| Rds On Max |
520 mΩ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| RoHS Status |
Non-RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
520mOhm @ 6.6A, 10V |
| Lead Free |
Lead Free |
Vishay Siliconix IRFS11N50ATRRP
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
32 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Channels |
1 |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation (Max) |
170W Tc |
| Element Configuration |
Single |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
11A |
| Rds On (Max) @ Id, Vgs |
520mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1423pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Rise Time |
35ns |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
1.423nF |
| Drain to Source Resistance |
520mOhm |
| Rds On Max |
520 mΩ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRFS9N60ATRRPBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
30 ns |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
170W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
11 Weeks |
| Fall Time (Typ) |
22 ns |
| Turn On Delay Time |
13 ns |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
9.2A |
| Gate to Source Voltage (Vgs) |
30V |
| Power Dissipation |
170W |
| Input Capacitance |
1.4nF |
| Drain to Source Resistance |
750mOhm |
| Rds On Max |
750 mΩ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRFSL11N50APBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Weight |
2.387001g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Number of Channels |
1 |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
550mOhm |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Turn Off Delay Time |
32 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
11A |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1426pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Rise Time |
34ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Avalanche Energy Rating (Eas) |
390 mJ |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRFSL31N20DTRR
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3.1W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
82m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
31A |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRFSL9N60A
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2017 |
| Supplier Device Package |
TO-262-3 |
| Weight |
2.387001g |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
170W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
170W |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Current Rating |
9.2A |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
9.2A |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Turn On Delay Time |
13 ns |
| Input Capacitance |
1.4nF |
| Drain to Source Resistance |
750mOhm |
| Rds On Max |
750 mΩ |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| RoHS Status |
Non-RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 5.5A, 10V |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFSL9N60APBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
I2PAK |
| Weight |
2.387001g |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Power Dissipation |
170W |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
750mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Turn Off Delay Time |
30 ns |
| Turn On Delay Time |
13 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
9.2A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 5.5A, 10V |
| Input Capacitance |
1.4nF |
| Drain to Source Resistance |
750mOhm |
| Rds On Max |
750 mΩ |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRFSL9N60ATRR
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2016 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
| Qualification Status |
Not Qualified |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| JESD-30 Code |
R-PSIP-T3 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
9.2A |
| Drain-source On Resistance-Max |
0.75Ohm |
| Pulsed Drain Current-Max (IDM) |
37A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRFU010
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
8.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Part Status |
Obsolete |
| Mount |
Through Hole |
| Current Rating |
8.2A |
| Voltage - Rated DC |
50V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 4.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
8.2A |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFU020PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Turn Off Delay Time |
25 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Through Hole |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
FAST SWITCHING |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Rise Time |
58ns |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
640pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
56A |
| DS Breakdown Voltage-Min |
60V |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRFU024
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-251AA |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Current Rating |
14A |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
60V |
| Turn Off Delay Time |
25 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
42 ns |
| Rds On (Max) @ Id, Vgs |
100mOhm @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
640pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
58ns |
| Drain to Source Voltage (Vdss) |
60V |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
640pF |
| Drain to Source Resistance |
100mOhm |
| Rds On Max |
100 mΩ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFU1N60APBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
36W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
18 ns |
| Published |
2005 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Continuous Drain Current (ID) |
1.4A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7 Ω @ 840mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
229pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Case Connection |
DRAIN |
| Power Dissipation |
36W |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
7Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
5.6A |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.38mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Turn On Delay Time |
9.8 ns |
| RoHS Status |
ROHS3 Compliant |