Showing 14485–14496 of 15245 results
Vishay Siliconix IRFU210PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 25W Tc |
| Turn Off Delay Time |
14 ns |
| Packaging |
Tube |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
8.9 ns |
| Continuous Drain Current (ID) |
2.6A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 1.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.2nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
95 mJ |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.38mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2.5W |
| Lead Free |
Lead Free |
Vishay Siliconix IRFU214
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-251AA |
| Current - Continuous Drain (Id) @ 25℃ |
2.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W Ta 25W Tc |
| Turn Off Delay Time |
16 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
2Ohm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
250V |
| Current Rating |
2.2A |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
25W |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
2.2A |
| Rds On (Max) @ Id, Vgs |
2Ohm @ 1.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.2nC @ 10V |
| Rise Time |
7.6ns |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Input Capacitance |
140pF |
| Drain to Source Resistance |
2Ohm |
| Rds On Max |
2 Ω |
| Nominal Vgs |
4 V |
| REACH SVHC |
Unknown |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFU224
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-251AA |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Turn Off Delay Time |
20 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
250V |
| Current Rating |
3.8A |
| Number of Channels |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
42W |
| Continuous Drain Current (ID) |
3.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
1.1Ohm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
250V |
| Input Capacitance |
260pF |
| Drain to Source Resistance |
1.1Ohm |
| Rds On Max |
1.1 Ω |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.38mm |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFU224PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.1Ohm |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
20 ns |
| Pin Count |
3 |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 2.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
3.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.38mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRFU420PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2008 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
3Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
2.4A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Packaging |
Tube |
| Lead Length |
9.65mm |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
42W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
8.6ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
2.4A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRFU9024
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-251AA |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
8.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
-60V |
| Current Rating |
-8.8A |
| Turn Off Delay Time |
15 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
8.8A |
| Rds On (Max) @ Id, Vgs |
280mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
570pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
68ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
13 ns |
| FET Type |
P-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
570pF |
| Drain to Source Resistance |
280mOhm |
| Rds On Max |
280 mΩ |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFU9120
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-251AA |
| Current - Continuous Drain (Id) @ 25℃ |
5.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 42W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
21 ns |
| Published |
2017 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
-100V |
| Current Rating |
-5.6A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
600mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
390pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
29ns |
| Drain to Source Voltage (Vdss) |
100V |
| Power Dissipation |
2.5W |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
5.6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Input Capacitance |
390pF |
| Drain to Source Resistance |
600mOhm |
| Rds On Max |
600 mΩ |
| RoHS Status |
Non-RoHS Compliant |
| Turn On Delay Time |
9.6 ns |
| Lead Free |
Contains Lead |
Vishay Siliconix IRFU9210
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn On Delay Time |
8 ns |
| Number of Pins |
3 |
| Supplier Device Package |
TO-251AA |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
1.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W Ta 25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
11 ns |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-200V |
| Input Capacitance (Ciss) (Max) @ Vds |
170pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.9nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
1.9A |
| Rds On (Max) @ Id, Vgs |
3Ohm @ 1.1A, 10V |
| FET Type |
P-Channel |
| Input Capacitance |
170pF |
| Drain to Source Resistance |
3Ohm |
| Rds On Max |
3 Ω |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.38mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRFZ14L
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-262-3 |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3.7W Ta 43W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
200mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
10A |
| Input Capacitance |
300pF |
| Rds On Max |
200 mΩ |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRFZ14PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
43W Tc |
| Turn Off Delay Time |
13 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
200mOhm |
| Voltage - Rated DC |
60V |
| Current Rating |
10A |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
2V |
| Case Connection |
DRAIN |
| Power Dissipation |
36W |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
47 mJ |
| Recovery Time |
140 ns |
| Nominal Vgs |
4 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
10 ns |
| Lead Free |
Lead Free |
Vishay Siliconix IRFZ14S
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3.7W Ta 43W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
13 ns |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
19 ns |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Rise Time |
50ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
10 ns |
| Input Capacitance |
300pF |
| Drain to Source Resistance |
200mOhm |
| Rds On Max |
200 mΩ |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Rds On (Max) @ Id, Vgs |
200mOhm @ 6A, 10V |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRFZ14STRLPBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3.7W Ta 43W Tc |
| Turn Off Delay Time |
13 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
200mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Rise Time |
50ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
300pF |
| Rds On Max |
200 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |