Manufacturer	Vishay Siliconix
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	15A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	40W Tc
Turn Off Delay Time	20 ns
Number of Channels	1
Factory Lead Time	8 Weeks
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	100MOhm
Additional Feature	ULTRA LOW-ON RESISTANCE
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
Continuous Drain Current (ID)	15A
Threshold Voltage	4V
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	45ns
Vgs (Max)	±20V

Manufacturer	Vishay Siliconix
Packaging	Tube
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	17A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	60W Tc
Turn Off Delay Time	25 ns
Pin Count	3
Operating Temperature	-55°C~175°C TJ
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	100mOhm
Terminal Finish	Matte Tin (Sn)
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Mount	Through Hole
Factory Lead Time	8 Weeks
Fall Time (Typ)	42 ns
Element Configuration	Single
Power Dissipation	60W
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	58ns
Vgs (Max)	±20V
Continuous Drain Current (ID)	17A

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~175°C TJ
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	17A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	3.7W Ta 60W Tc
Element Configuration	Single
Mount	Surface Mount
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	100mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Turn Off Delay Time	25 ns
Turn On Delay Time	13 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	20V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 10A, 10V
Drain to Source Breakdown Voltage	60V
Input Capacitance	640pF
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Height	4.69mm
Length	10.54mm
Width	8.81mm
RoHS Status	Non-RoHS Compliant

Manufacturer	Vishay Siliconix
Turn Off Delay Time	23 ns
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	30A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Element Configuration	Single
Mount	Through Hole
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Power Dissipation (Max)	74W Tc
Turn On Delay Time	12 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	50V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	50mOhm @ 16A, 10V
Drain to Source Breakdown Voltage	50V
Input Capacitance	1.6nF
Drain to Source Resistance	45mOhm
Rds On Max	50 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No

Discrete Semiconductors