Showing 14521–14532 of 15245 results
Vishay Siliconix IRLD014
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Package / Case |
4-DIP (0.300, 7.62mm) |
| Number of Pins |
4 |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Power Dissipation (Max) |
1.3W Ta |
| Turn Off Delay Time |
17 ns |
| Power Dissipation |
1.3W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
60V |
| Current Rating |
1.7A |
| Number of Channels |
1 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
1.7A |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.4nC @ 5V |
| Rise Time |
110ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
110 ns |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
60V |
| Turn On Delay Time |
9.3 ns |
| Input Capacitance |
400pF |
| Drain to Source Resistance |
200mOhm |
| Rds On Max |
200 mΩ |
| Height |
3.37mm |
| Length |
5mm |
| Width |
6.29mm |
| RoHS Status |
Non-RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
200mOhm @ 1A, 5V |
| Lead Free |
Contains Lead |
Vishay Siliconix IRLD024PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn On Delay Time |
11 ns |
| Mounting Type |
Through Hole |
| Package / Case |
4-DIP (0.300, 7.62mm) |
| Number of Pins |
4 |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
23 ns |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
100mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
60V |
| Current Rating |
2.5A |
| Element Configuration |
Single |
| Power Dissipation |
1.3W |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
870pF |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 5V |
| Rise Time |
110ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
110 ns |
| Continuous Drain Current (ID) |
2.5A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
10V |
| Rds On (Max) @ Id, Vgs |
100mOhm @ 1.5A, 5V |
| FET Type |
N-Channel |
| Recovery Time |
260 ns |
| Drain to Source Resistance |
100mOhm |
| Rds On Max |
100 mΩ |
| Height |
3.37mm |
| Length |
5mm |
| Width |
6.29mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Lead Free |
Lead Free |
Vishay Siliconix IRLD110PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
4-DIP (0.300, 7.62mm) |
| Number of Pins |
4 |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25℃ |
1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Power Dissipation |
1.3W |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
540mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
100V |
| Current Rating |
1A |
| Element Configuration |
Single |
| Turn Off Delay Time |
16 ns |
| Turn On Delay Time |
9.3 ns |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
100V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6.1nC @ 5V |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
47 ns |
| Continuous Drain Current (ID) |
1A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
540mOhm @ 600mA, 5V |
| Input Capacitance |
250pF |
| Drain to Source Resistance |
540mOhm |
| Rds On Max |
540 mΩ |
| Nominal Vgs |
2 V |
| Height |
3.37mm |
| Length |
5mm |
| Width |
6.29mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRLD120
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
4-DIP (0.300, 7.62mm) |
| Number of Pins |
4 |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25℃ |
1.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
270mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
100V |
| Current Rating |
1.3A |
| Turn Off Delay Time |
21 ns |
| Power Dissipation |
1.3W |
| Continuous Drain Current (ID) |
1.3A |
| Gate to Source Voltage (Vgs) |
10V |
| Rds On (Max) @ Id, Vgs |
270mOhm @ 780mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
490pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 5V |
| Rise Time |
64ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
64 ns |
| Turn On Delay Time |
9.8 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
490pF |
| Drain to Source Resistance |
270mOhm |
| Rds On Max |
270 mΩ |
| Height |
3.37mm |
| Length |
5mm |
| Width |
6.29mm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRLI520GPBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
21 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220-3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
7.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Element Configuration |
Single |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation (Max) |
37W Tc |
| Turn On Delay Time |
9.8 ns |
| Continuous Drain Current (ID) |
7.2A |
| Gate to Source Voltage (Vgs) |
10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
490pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 5V |
| Rise Time |
64ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
27 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
270mOhm @ 4.3A, 5V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
490pF |
| Drain to Source Resistance |
270mOhm |
| Rds On Max |
270 mΩ |
| Height |
9.8mm |
| Length |
10.63mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRLI540G
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
35 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220-3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation (Max) |
48W Tc |
| Power Dissipation |
48W |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
10V |
| Rds On (Max) @ Id, Vgs |
77mOhm @ 10A, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 5V |
| Rise Time |
170ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
80 ns |
| Turn On Delay Time |
8.5 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
2.2nF |
| Drain to Source Resistance |
77mOhm |
| Rds On Max |
77 mΩ |
| Height |
9.8mm |
| Length |
10.63mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRLI620G
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
18 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Published |
2017 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
200V |
| Current Rating |
4.1A |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
30W |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
4A |
| Rds On (Max) @ Id, Vgs |
800mOhm @ 2.4A, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
31ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±10V |
| Turn On Delay Time |
4.2 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
200V |
| Input Capacitance |
360pF |
| Drain to Source Resistance |
800mOhm |
| Rds On Max |
800 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRLI640G
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Supplier Device Package |
TO-220-3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
9.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
44 ns |
| Turn On Delay Time |
8 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2017 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
9.9A |
| Rds On (Max) @ Id, Vgs |
180mOhm @ 5.9A, 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
83ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
52 ns |
| Gate to Source Voltage (Vgs) |
10V |
| Input Capacitance |
1.8nF |
| FET Type |
N-Channel |
| Drain to Source Resistance |
180mOhm |
| Rds On Max |
180 mΩ |
| Height |
9.8mm |
| Length |
10.63mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRLI640GPBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220-3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
9.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
44 ns |
| Turn On Delay Time |
8 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
180mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Voltage |
200V |
| Element Configuration |
Single |
| Power Dissipation |
40W |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Drain to Source Breakdown Voltage |
200V |
| Rds On (Max) @ Id, Vgs |
180mOhm @ 5.9A, 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
83ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
52 ns |
| Continuous Drain Current (ID) |
9.9A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
10V |
| Dual Supply Voltage |
200V |
| Input Capacitance |
1.8nF |
| FET Type |
N-Channel |
| Drain to Source Resistance |
180mOhm |
| Rds On Max |
180 mΩ |
| Nominal Vgs |
2 V |
| Height |
9.8mm |
| Length |
10.63mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Lead Free |
Lead Free |
Vishay Siliconix IRLL014
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
17 ns |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-223 |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Voltage - Rated DC |
60V |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±10V |
| Power Dissipation |
2W |
| Rds On (Max) @ Id, Vgs |
200mOhm @ 1.6A, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.4nC @ 5V |
| Rise Time |
110ns |
| Drain to Source Voltage (Vdss) |
60V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
2.7A |
| Current Rating |
2.7A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
400pF |
| Drain to Source Resistance |
200mOhm |
| Rds On Max |
200 mΩ |
| RoHS Status |
Non-RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Contains Lead |
Vishay Siliconix IRLL014TRPBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Weight |
250.212891mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Turn Off Delay Time |
17 ns |
| JESD-30 Code |
R-PDSO-G3 |
| Factory Lead Time |
8 Weeks |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
200mOhm |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Operating Temperature |
-55°C~150°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
110ns |
| Vgs (Max) |
±10V |
| Current |
2A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 1.6A, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.4nC @ 5V |
| Number of Channels |
1 |
| Voltage |
55V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
2.7A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
60V |
| Nominal Vgs |
1 V |
| Height |
1.8mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRLL110PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-223 |
| Weight |
250.212891mg |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Turn Off Delay Time |
16 ns |
| Power Dissipation |
2W |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2015 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
540mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
100V |
| Current Rating |
1.5A |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
10V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6.1nC @ 5V |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
1.5A |
| Threshold Voltage |
2V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
250pF |
| Turn On Delay Time |
9.3 ns |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
540mOhm |
| Rds On Max |
540 mΩ |
| Height |
1.8mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
540mOhm @ 900mA, 5V |
| Lead Free |
Lead Free |