Manufacturer	Vishay Siliconix
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30V
RoHS Status	Non-RoHS Compliant

Manufacturer	Vishay Siliconix
Terminal Form	GULL WING
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	7.7A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Number of Elements	1
Power Dissipation (Max)	2.5W Ta 25W Tc
Turn Off Delay Time	17 ns
Packaging	Tape & Reel (TR)
Published	2016
Operating Temperature	-55°C~150°C TJ
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.95
Mount	Surface Mount
Factory Lead Time	21 Weeks
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 5V
JESD-30 Code	R-PSSO-G2
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 4.6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Time@Peak Reflow Temperature-Max (s)	30
Peak Reflow Temperature (Cel)	240
Rise Time	110ns
Vgs (Max)	±10V
Fall Time (Typ)	26 ns

Manufacturer	Vishay Siliconix
Turn Off Delay Time	17 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	7.7A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Element Configuration	Single
Factory Lead Time	8 Weeks
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Power Dissipation (Max)	2.5W Ta 25W Tc
Turn On Delay Time	9.3 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 5V
Rise Time	110ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±10V
Fall Time (Typ)	26 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200mOhm @ 4.6A, 5V
Drain to Source Breakdown Voltage	60V
Input Capacitance	400pF
Drain to Source Resistance	200mOhm
Rds On Max	200 mΩ
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No

Manufacturer	Vishay Siliconix
Pin Count	3
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	7.7A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Number of Elements	1
Power Dissipation (Max)	2.5W Ta 25W Tc
Turn Off Delay Time	17 ns
Packaging	Tape & Reel (TR)
Published	2014
Operating Temperature	-55°C~150°C TJ
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	200mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Mount	Surface Mount
Factory Lead Time	8 Weeks
Rise Time	110ns
Vgs (Max)	±10V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	9.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 4.6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 5V
Number of Channels	1
JESD-30 Code	R-PSSO-G2

Discrete Semiconductors