Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~175°C TJ
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Current - Continuous Drain (Id) @ 25℃	10A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Power Dissipation (Max)	3.7W Ta 43W Tc
Element Configuration	Single
Turn Off Delay Time	17 ns
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Mounting Type	Surface Mount
Mount	Surface Mount
Fall Time (Typ)	26 ns
FET Type	N-Channel
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 5V
Rise Time	110ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±10V
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	10V
Turn On Delay Time	9.3 ns
Input Capacitance	400pF
Drain to Source Resistance	200mOhm
Rds On Max	200 mΩ
Height	4.83mm
Length	10.41mm
Width	9.65mm
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 5V
RoHS Status	Non-RoHS Compliant

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~175°C TJ
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	17A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Power Dissipation (Max)	60W Tc
Power Dissipation	60W
Turn Off Delay Time	23 ns
Packaging	Tube
Published	2008
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Mounting Type	Through Hole
Mount	Through Hole
Continuous Drain Current (ID)	17A
FET Type	N-Channel
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	110ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±10V
Fall Time (Typ)	41 ns
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	60V
Turn On Delay Time	11 ns
Input Capacitance	870pF
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~175°C TJ
Mounting Type	Through Hole
Supplier Device Package	TO-262-3
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	17A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Power Dissipation (Max)	3.7W Ta 60W Tc
Element Configuration	Single
Mount	Through Hole
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Turn Off Delay Time	23 ns
Turn On Delay Time	11 ns
Fall Time (Typ)	41 ns
Continuous Drain Current (ID)	17A
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	110ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±10V
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 10A, 5V
Gate to Source Voltage (Vgs)	10V
Input Capacitance	870pF
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant

Manufacturer	Vishay Siliconix
Pin Count	3
Mounting Type	Through Hole
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	17A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 5V
Number of Elements	1
Power Dissipation (Max)	3.7W Ta 60W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Turn Off Delay Time	23 ns
Published	2016
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Mount	Through Hole
Factory Lead Time	8 Weeks
Vgs (Max)	±10V
Fall Time (Typ)	41 ns
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	110ns
Element Configuration	Single
Number of Channels	1
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	60V

Discrete Semiconductors