Showing 14557–14568 of 15245 results
Vishay Siliconix SI1031X-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Additional Feature |
LOW THRESHOLD |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-75A |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
155mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300mW Ta |
| Turn Off Delay Time |
60 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
8Ohm |
| Terminal Finish |
PURE MATTE TIN |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| JESD-30 Code |
R-PDSO-F3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
FLAT |
| Terminal Position |
DUAL |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 4.5V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±6V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
155mA |
| Gate to Source Voltage (Vgs) |
6V |
| Drain Current-Max (Abs) (ID) |
0.155A |
| Drain to Source Breakdown Voltage |
-20V |
| Peak Reflow Temperature (Cel) |
260 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1032R-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
SC-75A |
| Number of Pins |
3 |
| Supplier Device Package |
SC-75A |
| Current - Continuous Drain (Id) @ 25℃ |
140mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250mW Ta |
| Number of Channels |
1 |
| Turn Off Delay Time |
50 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
5Ohm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
25 ns |
| Power Dissipation |
280mW |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
0.75nC @ 4.5V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±6V |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
6V |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
20V |
| Drain to Source Resistance |
5Ohm |
| Rds On Max |
5 Ω |
| Height |
700μm |
| Length |
1.58mm |
| Width |
760μm |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
50 ns |
| Lead Free |
Lead Free |
Vishay Siliconix SI1032X-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-89, SOT-490 |
| Number of Pins |
3 |
| Weight |
29.993795mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300mW Ta |
| Turn Off Delay Time |
50 ns |
| Terminal Form |
FLAT |
| Factory Lead Time |
14 Weeks |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±6V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300mW |
| Turn On Delay Time |
50 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
0.75nC @ 4.5V |
| Rise Time |
25ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
200mA |
| Threshold Voltage |
700mV |
| Gate to Source Voltage (Vgs) |
6V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| DS Breakdown Voltage-Min |
20V |
| Height |
800μm |
| Length |
1.7mm |
| Width |
950μm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI1046R-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Element Configuration |
Single |
| Package / Case |
SC-75A |
| Number of Pins |
3 |
| Supplier Device Package |
SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
76 ns |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
606mA |
| Rds On (Max) @ Id, Vgs |
420mOhm @ 606mA, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
66pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
1.49nC @ 5V |
| Rise Time |
19ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Turn On Delay Time |
17 ns |
| Power Dissipation |
250mW |
| Gate to Source Voltage (Vgs) |
8V |
| Input Capacitance |
66pF |
| Drain to Source Resistance |
420mOhm |
| Rds On Max |
420 mΩ |
| Height |
700μm |
| Length |
1.6mm |
| Width |
760μm |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1050X-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Weight |
32.006612mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.34A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
236mW Ta |
| Terminal Form |
FLAT |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
26 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
35ns |
| Drain to Source Voltage (Vdss) |
8V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
6.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
86m Ω @ 1.34A, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
585pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs |
11.6nC @ 5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
6 |
| Vgs (Max) |
±5V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
1.34A |
| Gate to Source Voltage (Vgs) |
5V |
| Pulsed Drain Current-Max (IDM) |
6A |
| DS Breakdown Voltage-Min |
8V |
| Nominal Vgs |
5 V |
| Height |
600μm |
| Length |
1.7mm |
| Width |
1.2mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1051X-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Supplier Device Package |
SC-89-6 |
| Weight |
32.006612mg |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Power Dissipation (Max) |
236mW Ta |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Turn Off Delay Time |
52 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
1.2A |
| Rds On (Max) @ Id, Vgs |
122mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs |
9.45nC @ 5V |
| Rise Time |
36ns |
| Drain to Source Voltage (Vdss) |
8V |
| Vgs (Max) |
±5V |
| Turn On Delay Time |
7.2 ns |
| FET Type |
P-Channel |
| Gate to Source Voltage (Vgs) |
5V |
| Input Capacitance |
560pF |
| Drain to Source Resistance |
198mOhm |
| Rds On Max |
122 mΩ |
| Height |
600μm |
| Length |
1.7mm |
| Width |
1.2mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1051X-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
236mW Ta |
| Turn Off Delay Time |
52 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs |
9.45nC @ 5V |
| Pin Count |
6 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
7.2 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
122m Ω @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Terminal Form |
FLAT |
| Rise Time |
36ns |
| Drain to Source Voltage (Vdss) |
8V |
| Vgs (Max) |
±5V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
1.2A |
| Gate to Source Voltage (Vgs) |
5V |
| Drain to Source Breakdown Voltage |
-8V |
| Radiation Hardening |
No |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1054X-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
SC-89-6 |
| Weight |
32.006612mg |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
236mW Ta |
| Turn Off Delay Time |
37 ns |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
95mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
1.32A |
| Rds On (Max) @ Id, Vgs |
95mOhm @ 1.32A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
8.57nC @ 5V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±8V |
| Turn On Delay Time |
5.5 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
8V |
| Input Capacitance |
480pF |
| Drain to Source Resistance |
95mOhm |
| Rds On Max |
95 mΩ |
| Height |
600μm |
| Length |
1.7mm |
| Width |
1.2mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1054X-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Supplier Device Package |
SC-89-6 |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
236mW Ta |
| Element Configuration |
Single |
| Turn Off Delay Time |
37 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±8V |
| Turn On Delay Time |
5.5 ns |
| Rds On (Max) @ Id, Vgs |
95mOhm @ 1.32A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
8.57nC @ 5V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
12V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
1.32A |
| Power Dissipation |
236mW |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Input Capacitance |
480pF |
| Drain to Source Resistance |
95mOhm |
| Rds On Max |
95 mΩ |
| Radiation Hardening |
No |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1058X-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Supplier Device Package |
SC-89-6 |
| Weight |
32.006612mg |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Turn Off Delay Time |
13 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
236mW Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
1.3A |
| Rds On (Max) @ Id, Vgs |
91mOhm @ 1.3A, 4.5V |
| Vgs(th) (Max) @ Id |
1.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
5.9nC @ 5V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Turn On Delay Time |
8 ns |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
12V |
| Input Capacitance |
380pF |
| Drain to Source Resistance |
91mOhm |
| Rds On Max |
91 mΩ |
| Height |
600μm |
| Length |
1.7mm |
| Width |
1.2mm |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1062X-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-89, SOT-490 |
| Number of Pins |
3 |
| Weight |
29.993795mg |
| Transistor Element Material |
SILICON |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
220mW Ta |
| Resistance |
420mOhm |
| Factory Lead Time |
14 Weeks |
| Packaging |
Cut Tape (CT) |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
16 ns |
| Terminal Finish |
Matte Tin (Sn) |
| Input Capacitance (Ciss) (Max) @ Vds |
43pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
2.7nC @ 8V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
220mW |
| Turn On Delay Time |
2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Rise Time |
14ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
530mA |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI1065X-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Supplier Device Package |
SC-89-6 |
| Weight |
32.006612mg |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
236mW Ta |
| Turn Off Delay Time |
45 ns |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Published |
2009 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
130MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
236mW |
| Continuous Drain Current (ID) |
1.18A |
| Gate to Source Voltage (Vgs) |
8V |
| Rds On (Max) @ Id, Vgs |
156mOhm @ 1.18A, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
10.8nC @ 5V |
| Rise Time |
27ns |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
27 ns |
| Turn On Delay Time |
13 ns |
| FET Type |
P-Channel |
| Drain to Source Breakdown Voltage |
-12V |
| Input Capacitance |
480pF |
| Drain to Source Resistance |
204mOhm |
| Rds On Max |
156 mΩ |
| Height |
600μm |
| Length |
1.7mm |
| Width |
1.2mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |