Showing 14569–14580 of 15245 results

Discrete Semiconductors

Vishay Siliconix SI1065X-T1-GE3

In stock

SKU: SI1065X-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Number of Pins

6

Supplier Device Package

SC-89-6

Weight

32.006612mg

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

236mW Ta

Number of Channels

1

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

156mOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Turn Off Delay Time

45 ns

Element Configuration

Single

Continuous Drain Current (ID)

1.18A

Gate to Source Voltage (Vgs)

8V

Rds On (Max) @ Id, Vgs

156mOhm @ 1.18A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 5V

Rise Time

27ns

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Fall Time (Typ)

27 ns

Turn On Delay Time

13 ns

FET Type

P-Channel

Drain to Source Breakdown Voltage

-12V

Input Capacitance

480pF

Drain to Source Resistance

204mOhm

Rds On Max

156 mΩ

Height

600μm

Length

1.7mm

Width

1.2mm

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI1070X-T1-E3

In stock

SKU: SI1070X-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Power Dissipation (Max)

236mW Ta

Turn Off Delay Time

14 ns

Min Operating Temperature

-55°C

Mount

Surface Mount

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

99mOhm

Max Operating Temperature

150°C

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Vgs (Max)

±12V

Fall Time (Typ)

22 ns

Rds On (Max) @ Id, Vgs

99mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1.55V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

385pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 5V

Rise Time

22ns

Drain to Source Voltage (Vdss)

30V

Power Dissipation

236mW

FET Type

N-Channel

Continuous Drain Current (ID)

1.2A

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

30V

Input Capacitance

385pF

Drain to Source Resistance

99mOhm

Rds On Max

99 mΩ

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1078X-T1-GE3

In stock

SKU: SI1078X-T1-GE3-11
Manufacturer

Vishay Siliconix

Factory Lead Time

14 Weeks

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Current - Continuous Drain (Id) @ 25℃

1.02A Tc

Drive Voltage (Max Rds On, Min Rds On)

2.5V 10V

Power Dissipation (Max)

240mW Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

142m Ω @ 1A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

3nC @ 4.5V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±12V

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1303DL-T1-GE3

In stock

SKU: SI1303DL-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

670mA Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

290mW Ta

Terminal Finish

PURE MATTE TIN (SN)

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2012

Series

TrenchFET®

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Turn Off Delay Time

12.5 ns

Terminal Position

DUAL

Vgs(th) (Max) @ Id

1.4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 4.5V

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

3

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

290mW

Turn On Delay Time

9 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

430m Ω @ 1A, 4.5V

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Rise Time

31ns

Vgs (Max)

±12V

Fall Time (Typ)

14 ns

Continuous Drain Current (ID)

-720mA

Gate to Source Voltage (Vgs)

12V

Drain Current-Max (Abs) (ID)

0.67A

Drain to Source Breakdown Voltage

20V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1307EDL-T1-GE3

In stock

SKU: SI1307EDL-T1-GE3-11
Manufacturer

Vishay Siliconix

Additional Feature

ESD PROTECTION

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

850mA Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

290mW Ta

Packaging

Tape & Reel (TR)

Published

2010

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Package / Case

SC-70, SOT-323

Mounting Type

Surface Mount

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

290m Ω @ 1A, 4.5V

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

3

JESD-30 Code

R-PDSO-G3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Terminal Form

GULL WING

Terminal Position

DUAL

Vgs(th) (Max) @ Id

450mV @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Drain Current-Max (Abs) (ID)

0.85A

Drain-source On Resistance-Max

0.29Ohm

DS Breakdown Voltage-Min

12V

Peak Reflow Temperature (Cel)

260

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1400DL-T1-E3

In stock

SKU: SI1400DL-T1-E3-11
Manufacturer

Vishay Siliconix

Element Configuration

Single

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Supplier Device Package

SC-70-6 (SOT-363)

Weight

7.512624mg

Current - Continuous Drain (Id) @ 25℃

1.6A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Turn Off Delay Time

14 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

568mW Ta

Packaging

Tape & Reel (TR)

Published

2010

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

150MOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Mount

Surface Mount

Factory Lead Time

15 Weeks

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

20V

Rds On (Max) @ Id, Vgs

150mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Rise Time

30ns

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

1.7A

Threshold Voltage

600mV

Turn On Delay Time

10 ns

Power Dissipation

625mW

Drain to Source Resistance

150mOhm

Rds On Max

150 mΩ

Nominal Vgs

600 mV

Height

1mm

Length

2mm

Width

1.25mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

Vishay Siliconix SI1400DL-T1-GE3

In stock

SKU: SI1400DL-T1-GE3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

14 ns

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Weight

7.512624mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

1.6A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

ECCN Code

EAR99

Factory Lead Time

13 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2010

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Power Dissipation (Max)

568mW Ta

Terminal Finish

PURE MATTE TIN

Rds On (Max) @ Id, Vgs

150m Ω @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250μA (Min)

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

6

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

568mW

Turn On Delay Time

10 ns

FET Type

N-Channel

Terminal Position

DUAL

Terminal Form

GULL WING

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Rise Time

30ns

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

1.6A

Gate to Source Voltage (Vgs)

12V

DS Breakdown Voltage-Min

20V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1402DH-T1-E3

In stock

SKU: SI1402DH-T1-E3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

13 ns

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Supplier Device Package

SC-70-6 (SOT-363)

Weight

28.009329mg

Current - Continuous Drain (Id) @ 25℃

2.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Number of Channels

1

Power Dissipation (Max)

950mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2010

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mounting Type

Surface Mount

Mount

Surface Mount

Fall Time (Typ)

12 ns

Power Dissipation

950mW

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

77mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 4.5V

Rise Time

12ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±12V

Continuous Drain Current (ID)

2.7A

Gate to Source Voltage (Vgs)

12V

Element Configuration

Single

Drain to Source Breakdown Voltage

30V

Drain to Source Resistance

77mOhm

Rds On Max

77 mΩ

Height

1mm

Length

2mm

Width

1.25mm

Radiation Hardening

No

Turn On Delay Time

5 ns

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1403CDL-T1-GE3

In stock

SKU: SI1403CDL-T1-GE3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Weight

7.512624mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

2.1A Tc

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

600mW Ta 900mW Tc

Turn Off Delay Time

30 ns

Pin Count

6

Operating Temperature

-55°C~150°C TJ

Published

2010

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs (Max)

±12V

Number of Channels

1

Power Dissipation

600mW

Turn On Delay Time

18 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

140m Ω @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

281pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Rise Time

26ns

Fall Time (Typ)

18 ns

Continuous Drain Current (ID)

2.1A

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

600mV

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

20V

Height

900μm

Length

2.05mm

Width

1.25mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Lead Free

Vishay Siliconix SI1405BDH-T1-E3

In stock

SKU: SI1405BDH-T1-E3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

16 ns

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Supplier Device Package

SC-70-6 (SOT-363)

Weight

7.512624mg

Current - Continuous Drain (Id) @ 25℃

1.6A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Number of Channels

1

Mount

Surface Mount

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2007

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

112mOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Power Dissipation (Max)

1.47W Ta 2.27W Tc

Element Configuration

Single

Fall Time (Typ)

26 ns

Continuous Drain Current (ID)

1.6A

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

112mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 4V

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4.5V

Rise Time

26ns

Drain to Source Voltage (Vdss)

8V

Vgs (Max)

±8V

Power Dissipation

1.47W

Turn On Delay Time

10 ns

Gate to Source Voltage (Vgs)

8V

Input Capacitance

305pF

Drain to Source Resistance

205mOhm

Rds On Max

112 mΩ

Height

1mm

Length

2mm

Width

1.25mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI1405BDH-T1-GE3

In stock

SKU: SI1405BDH-T1-GE3-11
Manufacturer

Vishay Siliconix

Max Operating Temperature

150°C

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Supplier Device Package

SC-70-6 (SOT-363)

Current - Continuous Drain (Id) @ 25℃

1.6A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Power Dissipation (Max)

1.47W Ta 2.27W Tc

Turn Off Delay Time

16 ns

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2012

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Mount

Surface Mount

Drain to Source Voltage (Vdss)

8V

Vgs (Max)

±8V

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

112mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 4V

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4.5V

Rise Time

26ns

Power Dissipation

1.47W

Min Operating Temperature

-55°C

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

1.6A

Gate to Source Voltage (Vgs)

8V

Input Capacitance

305pF

Rds On Max

112 mΩ

Radiation Hardening

No

Turn On Delay Time

10 ns

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI1405DL-T1-E3

In stock

SKU: SI1405DL-T1-E3-11
Manufacturer

Vishay Siliconix

Power Dissipation

568mW

Package / Case

6-TSSOP, SC-88, SOT-363

Number of Pins

6

Supplier Device Package

SC-70-6 (SOT-363)

Current - Continuous Drain (Id) @ 25℃

1.6A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Power Dissipation (Max)

568mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

33 ns

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

125mOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Element Configuration

Single

Mounting Type

Surface Mount

Mount

Surface Mount

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

8V

Vgs(th) (Max) @ Id

450mV @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Rise Time

36ns

Drain to Source Voltage (Vdss)

8V

Vgs (Max)

±8V

Fall Time (Typ)

36 ns

Continuous Drain Current (ID)

1.6A

FET Type

P-Channel

Turn On Delay Time

8 ns

Drain to Source Resistance

210mOhm

Rds On Max

54 mΩ

Height

990.6μm

Length

2.3876mm

Width

1.3462mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Rds On (Max) @ Id, Vgs

125mOhm @ 1.8A, 4.5V

Lead Free

Lead Free