Showing 14581–14592 of 15245 results
Vishay Siliconix SI1406DH-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Terminal Finish |
PURE MATTE TIN |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
54 ns |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 3.9A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
7.5nC @ 4.5V |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
3.1A |
| Gate to Source Voltage (Vgs) |
8V |
| DS Breakdown Voltage-Min |
20V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1410EDH-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Turn Off Delay Time |
1.9 μs |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
70mOhm |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
400 ns |
| Continuous Drain Current (ID) |
3.7A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
150 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 3.7A, 4.5V |
| Vgs(th) (Max) @ Id |
450mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
| Rise Time |
400ns |
| Vgs (Max) |
±12V |
| Pin Count |
6 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
2.9A |
| Drain to Source Breakdown Voltage |
20V |
| Nominal Vgs |
450 mV |
| Height |
900μm |
| Length |
2.05mm |
| Width |
1.25mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SI1417EDH-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Turn Off Delay Time |
4.9 μs |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
85MOhm |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
1.4 μs |
| Continuous Drain Current (ID) |
-3.3A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
600 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id |
450mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
| Rise Time |
1.4μs |
| Vgs (Max) |
±12V |
| Pin Count |
6 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Threshold Voltage |
-450mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
2.7A |
| Drain to Source Breakdown Voltage |
12V |
| Nominal Vgs |
-450 mV |
| Height |
900μm |
| Length |
2.05mm |
| Width |
1.25mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1431DH-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
950mW Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
10 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
6 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
950mW |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 100μA |
| Terminal Position |
DUAL |
| Gate Charge (Qg) (Max) @ Vgs |
4nC @ 4.5V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
1.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Peak Reflow Temperature (Cel) |
260 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI1467DH-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Weight |
7.512624mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta 2.78W Tc |
| Turn Off Delay Time |
36 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
90mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
43ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Turn On Delay Time |
16 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
561pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
13.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Peak Reflow Temperature (Cel) |
260 |
| Fall Time (Typ) |
43 ns |
| Continuous Drain Current (ID) |
2.7A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
-20V |
| Height |
1mm |
| Length |
2mm |
| Width |
1.25mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
6 |
| Lead Free |
Lead Free |
Vishay Siliconix SI1473DH-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2014 |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Weight |
7.512624mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta 2.78W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
100MOhm |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
6.2nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
365pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
2.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.7A |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Nominal Vgs |
-1 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
6 |
| Lead Free |
Lead Free |
Vishay Siliconix SI2301BDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
100MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
40 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
375pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
| Rise Time |
40ns |
| Drain to Source Voltage (Vdss) |
20V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Continuous Drain Current (ID) |
-2.2A |
| Threshold Voltage |
-950mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
-20V |
| Nominal Vgs |
-950 mV |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI2302ADS-T1
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn On Delay Time |
7 ns |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23-3 (TO-236) |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
2.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
700mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
16 ns |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
900mW |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
2.1A |
| Gate to Source Voltage (Vgs) |
8V |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Forward Voltage |
760mV |
| Fall Time (Typ) |
55 ns |
| Rds On (Max) @ Id, Vgs |
60mOhm @ 3.6A, 4.5V |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
300pF |
| Drain to Source Resistance |
60mOhm |
| Rds On Max |
60 mΩ |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Vgs(th) (Max) @ Id |
1.2V @ 50μA |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI2303BDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.49A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
10 ns |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
55 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 1.7A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
-1.49A |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
-3 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI2303CDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta 2.3W Tc |
| Turn Off Delay Time |
11 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
190mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
4 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
155pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 10V |
| Rise Time |
37ns |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
-2.7A |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-3 V |
| Height |
1.12mm |
| Length |
3.04mm |
| Width |
1.4mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI2304DDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Number of Elements |
1 |
| Factory Lead Time |
14 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
60mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Series |
TrenchFET® |
| Number of Channels |
1 |
| Rise Time |
50ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.1W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 3.2A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
235pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
3.3A Ta 3.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
6.7nC @ 10V |
| Power Dissipation-Max |
1.1W Ta 1.7W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
12 ns |
| Continuous Drain Current (ID) |
3.6A |
| Threshold Voltage |
2.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
2.2 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI2305ADS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2014 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
960mW Ta 1.7W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-50°C~150°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
40MOhm |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
11ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
960mW |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 4.1A, 4.5V |
| Vgs(th) (Max) @ Id |
800mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
740pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
11 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
-4.1A |
| Threshold Voltage |
-800mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
5.4A |
| Drain to Source Breakdown Voltage |
8V |
| Nominal Vgs |
-800 mV |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |