Showing 14593–14604 of 15245 results
Vishay Siliconix SI2305CDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
960mW Ta 1.7W Tc |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
35mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Voltage |
8V |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±8V |
| Current |
58A |
| Power Dissipation |
960mW |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
960pF @ 4V |
| Current - Continuous Drain (Id) @ 25°C |
5.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 8V |
| Rise Time |
20ns |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Fall Time (Typ) |
20 ns |
| Turn-Off Delay Time |
40 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
-4.4A |
| Threshold Voltage |
-400mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
-8V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SI2307BDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Turn Off Delay Time |
25 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
12ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
9 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
78m Ω @ 3.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
2.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.078Ohm |
| Drain to Source Breakdown Voltage |
-30V |
| Dual Supply Voltage |
30V |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI2309DS-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-23-3 (TO-236) |
| Weight |
1.437803g |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.25W Ta |
| Voltage |
60V |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
340mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Turn Off Delay Time |
15.5 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
11.5 ns |
| Continuous Drain Current (ID) |
-1.25A |
| Turn On Delay Time |
10.5 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
340mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Rise Time |
11.5ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Current |
12A |
| Power Dissipation |
1.25W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Drain to Source Resistance |
340mOhm |
| Rds On Max |
340 mΩ |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI2312CDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.25W Ta 2.1W Tc |
| Turn Off Delay Time |
31 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Published |
2010 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
31.8MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
17ns |
| Vgs (Max) |
±8V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.25W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
31.8m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
865pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 5V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
6A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain to Source Breakdown Voltage |
20V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI2315BDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
50 ns |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
35 ns |
| Element Configuration |
Single |
| Current |
3A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 3.85A, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
715pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Rise Time |
35ns |
| Number of Channels |
1 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
-3A |
| Threshold Voltage |
-900mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.05Ohm |
| Drain to Source Breakdown Voltage |
-12V |
| Nominal Vgs |
-900 mV |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Voltage |
12V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI2316BDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.25W Ta 1.66W Tc |
| Turn Off Delay Time |
11 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
50MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
65ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 3.9A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
9.6nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
4.5A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Vishay Siliconix SI2316DS-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
14 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
50mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Rise Time |
9ns |
| Voltage |
30V |
| Element Configuration |
Single |
| Current |
2A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
800mV @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds |
215pF @ 15V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
3.4A |
| Gate to Source Voltage (Vgs) |
20V |
| Nominal Vgs |
800 mV |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI2319CDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation-Max |
1.25W Ta 2.5W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
77mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Turn-Off Delay Time |
18 ns |
| Continuous Drain Current (ID) |
-4.4A |
| Turn On Delay Time |
40 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
77m Ω @ 3.1A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
595pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C |
4.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Threshold Voltage |
-2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-40V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-1.2 V |
| Height |
1.12mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
1.25W |
| Lead Free |
Lead Free |
Vishay Siliconix SI2323CDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Element Configuration |
Single |
| Factory Lead Time |
14 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
39mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.25W Ta 2.5W Tc |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
40 ns |
| Continuous Drain Current (ID) |
-4.6A |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 4.6A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1090pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
6A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 4.5V |
| Rise Time |
23ns |
| Drain to Source Voltage (Vdss) |
20V |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
12 ns |
| Power Dissipation |
1.25W |
| Turn On Delay Time |
15 ns |
| Threshold Voltage |
-400mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain to Source Breakdown Voltage |
-20V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-400 mV |
| Height |
1.12mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI2323DDS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
960mW Ta 1.7W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Turn Off Delay Time |
58 ns |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
960mW |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 4.1A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1160pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 8V |
| Rise Time |
22ns |
| Number of Channels |
1 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
-4.1A |
| Threshold Voltage |
-1V |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
-20V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SI2323DS-T1
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-23-3 (TO-236) |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
3.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
750mW Ta |
| Element Configuration |
Single |
| Turn Off Delay Time |
71 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
43 ns |
| Turn On Delay Time |
25 ns |
| Rds On (Max) @ Id, Vgs |
39mOhm @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1020pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
43ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Continuous Drain Current (ID) |
3.7A |
| Gate to Source Voltage (Vgs) |
8V |
| Power Dissipation |
1.25W |
| Drain to Source Breakdown Voltage |
-20V |
| Input Capacitance |
1.02nF |
| Drain to Source Resistance |
39mOhm |
| Rds On Max |
39 mΩ |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| FET Type |
P-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI2324DS-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.25W Ta 2.5W Tc |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
10 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rds On (Max) @ Id, Vgs |
234m Ω @ 1.5A, 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.25W |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 50V |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
10.4nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
2.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Radiation Hardening |
No |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| RoHS Status |
ROHS3 Compliant |