Showing 14617–14628 of 15245 results

Discrete Semiconductors

Vishay Siliconix SI3437DV-T1-E3

In stock

SKU: SI3437DV-T1-E3-11
Manufacturer

Vishay Siliconix

Series

TrenchFET®

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

1.4A Tc

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Number of Elements

1

Power Dissipation (Max)

2W Ta 3.2W Tc

Turn Off Delay Time

23 ns

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

40

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Termination

SMD/SMT

ECCN Code

EAR99

Resistance

750mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Factory Lead Time

14 Weeks

Vgs (Max)

±20V

Max Output Current

2A

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2W

Turn On Delay Time

14 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

750m Ω @ 1.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Rise Time

29ns

Drain to Source Voltage (Vdss)

150V

Fall Time (Typ)

14 ns

Continuous Drain Current (ID)

1.1A

Pin Count

6

Threshold Voltage

-4V

Gate to Source Voltage (Vgs)

20V

Pulsed Drain Current-Max (IDM)

5A

Dual Supply Voltage

-150V

Nominal Vgs

-4 V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Vishay Siliconix SI3443BDV-T1-E3

In stock

SKU: SI3443BDV-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.6A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.1W Ta

Terminal Form

GULL WING

Factory Lead Time

14 Weeks

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Resistance

60mOhm

Terminal Position

DUAL

Turn Off Delay Time

45 ns

Peak Reflow Temperature (Cel)

260

Vgs (Max)

±12V

Fall Time (Typ)

25 ns

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.1W

Turn On Delay Time

22 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

60m Ω @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Rise Time

35ns

Drain to Source Voltage (Vdss)

20V

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

6

Continuous Drain Current (ID)

3.6A

Threshold Voltage

-1.4V

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

-20V

Nominal Vgs

-1.4 V

Height

990.6μm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI3447BDV-T1-E3

In stock

SKU: SI3447BDV-T1-E3-11
Manufacturer

Vishay Siliconix

Series

TrenchFET®

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.1W Ta

Turn Off Delay Time

62 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Termination

SMD/SMT

ECCN Code

EAR99

Resistance

53mOhm

Terminal Finish

Matte Tin (Sn)

Additional Feature

ULTRA-LOW RESISTANCE

Terminal Position

DUAL

Terminal Form

GULL WING

Published

2005

Time@Peak Reflow Temperature-Max (s)

40

Fall Time (Typ)

46 ns

Reverse Recovery Time

40 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.1W

Turn On Delay Time

20 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

40m Ω @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Rise Time

46ns

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Pin Count

6

Element Configuration

Single

Continuous Drain Current (ID)

-4.5A

Threshold Voltage

-1V

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

-12V

Dual Supply Voltage

-12V

Nominal Vgs

-1 V

Height

990.6μm

Length

3.0988mm

Width

3mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI3447CDV-T1-E3

In stock

SKU: SI3447CDV-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Weight

19.986414mg

Current - Continuous Drain (Id) @ 25℃

7.8A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Number of Elements

1

Power Dissipation (Max)

2W Ta 3W Tc

Power Dissipation

2W

Turn Off Delay Time

35 ns

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Element Configuration

Single

Mount

Surface Mount

Factory Lead Time

15 Weeks

Gate to Source Voltage (Vgs)

8V

FET Type

P-Channel

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

910pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

30nC @ 8V

Rise Time

40ns

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

-7.8A

Threshold Voltage

-1V

Drain to Source Breakdown Voltage

-12V

Dual Supply Voltage

12V

Turn On Delay Time

20 ns

Input Capacitance

910pF

Drain to Source Resistance

36mOhm

Rds On Max

36 mΩ

Nominal Vgs

-1 V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

Unknown

Rds On (Max) @ Id, Vgs

36mOhm @ 6.3A, 4.5V

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3447CDV-T1-GE3

In stock

SKU: SI3447CDV-T1-GE3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

35 ns

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

7.8A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Terminal Position

DUAL

Factory Lead Time

15 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2012

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Resistance

36MOhm

Power Dissipation (Max)

2W Ta 3W Tc

Terminal Form

GULL WING

Rise Time

40ns

Drain to Source Voltage (Vdss)

12V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2W

Turn On Delay Time

20 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

36m Ω @ 6.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

910pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

30nC @ 8V

Pin Count

6

Number of Channels

1

Vgs (Max)

±8V

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

6.3A

Gate to Source Voltage (Vgs)

8V

Drain Current-Max (Abs) (ID)

7.8A

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI3451DV-T1-E3

In stock

SKU: SI3451DV-T1-E3-11
Manufacturer

Vishay Siliconix

Power Dissipation (Max)

1.25W Ta 2.1W Tc

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Current - Continuous Drain (Id) @ 25℃

2.8A Tc

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Max Operating Temperature

150°C

Mount

Surface Mount

Turn Off Delay Time

32 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Elements

1

Min Operating Temperature

-55°C

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

115mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 5V

Rise Time

30ns

Element Configuration

Single

Power Dissipation

1.25W

Fall Time (Typ)

30 ns

Continuous Drain Current (ID)

-2.8A

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

20V

Input Capacitance

250pF

Drain to Source Resistance

115mOhm

Rds On Max

115 mΩ

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3451DV-T1-GE3

In stock

SKU: SI3451DV-T1-GE3-11
Manufacturer

Vishay Siliconix

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Current - Continuous Drain (Id) @ 25℃

2.8A Tc

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Power Dissipation (Max)

1.25W Ta 2.1W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Element Configuration

Single

Power Dissipation

1.25W

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

115mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 5V

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Continuous Drain Current (ID)

2.8A

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

20V

Input Capacitance

250pF

Drain to Source Resistance

115mOhm

Rds On Max

115 mΩ

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3453DV-T1-GE3

In stock

SKU: SI3453DV-T1-GE3-11
Manufacturer

Vishay Siliconix

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Package / Case

SOT-23-6 Thin, TSOT-23-6

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.4A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

11 ns

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Mounting Type

Surface Mount

Factory Lead Time

14 Weeks

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

155pF @ 15V

JESD-30 Code

R-PDSO-G6

Configuration

SINGLE WITH BUILT-IN DIODE

Number of Channels

1

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

4 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

165m Ω @ 2.5A, 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

unknown

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 10V

Rise Time

9ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

-3.4A

Gate to Source Voltage (Vgs)

20V

DS Breakdown Voltage-Min

30V

Pin Count

6

RoHS Status

RoHS Compliant

Vishay Siliconix SI3454ADV-T1-GE3

In stock

SKU: SI3454ADV-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.4A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.14W Ta

ECCN Code

EAR99

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Turn Off Delay Time

20 ns

Terminal Finish

PURE MATTE TIN

Rds On (Max) @ Id, Vgs

60m Ω @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

6

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.14W

Turn On Delay Time

10 ns

FET Type

N-Channel

Terminal Position

DUAL

Terminal Form

GULL WING

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Rise Time

10ns

Vgs (Max)

±20V

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

3.4A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3454CDV-T1-E3

In stock

SKU: SI3454CDV-T1-E3-11
Manufacturer

Vishay Siliconix

Published

2013

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.2A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.25W Ta 1.5W Tc

Turn Off Delay Time

8 ns

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Time@Peak Reflow Temperature-Max (s)

40

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.25W

Turn On Delay Time

4 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

50m Ω @ 3.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

10.6nC @ 10V

Rise Time

12ns

Pin Count

6

Element Configuration

Single

Fall Time (Typ)

12 ns

Continuous Drain Current (ID)

3.8A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

4.2A

Drain-source On Resistance-Max

0.05Ohm

DS Breakdown Voltage-Min

30V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3455ADV-T1-E3

In stock

SKU: SI3455ADV-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Current - Continuous Drain (Id) @ 25℃

2.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.14W Ta

Power Dissipation

1.14W

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

100mOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Element Configuration

Single

Turn Off Delay Time

20 ns

Turn On Delay Time

10 ns

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

7ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

-3.5A

Threshold Voltage

-1V

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

100mOhm @ 3.5A, 10V

Drain to Source Resistance

100mOhm

Rds On Max

100 mΩ

Nominal Vgs

-1 V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI3456BDV-T1-E3

In stock

SKU: SI3456BDV-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Current - Continuous Drain (Id) @ 25℃

4.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.1W Ta

Power Dissipation

1.1W

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2009

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Element Configuration

Single

Turn Off Delay Time

25 ns

Turn On Delay Time

10 ns

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

15ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

6A

Threshold Voltage

3V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 10V

Drain to Source Resistance

35mOhm

Rds On Max

35 mΩ

Height

990.6μm

Length

3.0988mm

Width

1.7018mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free