Showing 14629–14640 of 15245 results

Discrete Semiconductors

Vishay Siliconix SI3456BDV-T1-GE3

In stock

SKU: SI3456BDV-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Weight

19.986414mg

Current - Continuous Drain (Id) @ 25℃

4.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

1.1W Ta

Number of Channels

1

Turn Off Delay Time

25 ns

Packaging

Tape & Reel (TR)

Published

2015

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

35MOhm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

4.5A

Turn On Delay Time

10 ns

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

15ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

10 ns

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Element Configuration

Single

Drain to Source Resistance

35mOhm

Rds On Max

35 mΩ

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

Vishay Siliconix SI3457BDV-T1-GE3

In stock

SKU: SI3457BDV-T1-GE3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.14W Ta

Turn Off Delay Time

30 ns

Terminal Position

DUAL

Mount

Surface Mount

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Rise Time

10ns

Vgs (Max)

±20V

Pin Count

6

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.14W

Turn On Delay Time

7 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

54m Ω @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Fall Time (Typ)

22 ns

Continuous Drain Current (ID)

-3.7A

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.054Ohm

Drain to Source Breakdown Voltage

30V

Nominal Vgs

-3 V

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3458DV-T1-E3

In stock

SKU: SI3458DV-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Supplier Device Package

6-TSOP

Weight

19.986414mg

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2W Ta

Element Configuration

Single

Turn Off Delay Time

20 ns

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

3.2A

Turn On Delay Time

10 ns

Rds On (Max) @ Id, Vgs

100mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Rise Time

10ns

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Fall Time (Typ)

10 ns

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Power Dissipation

2W

Drain to Source Resistance

100mOhm

Rds On Max

100 mΩ

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

Vishay Siliconix SI3460BDV-T1-E3

In stock

SKU: SI3460BDV-T1-E3-11
Manufacturer

Vishay Siliconix

Time@Peak Reflow Temperature-Max (s)

40

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

2W Ta 3.5W Tc

Turn Off Delay Time

25 ns

Packaging

Tape & Reel (TR)

Published

2001

Operating Temperature

-55°C~150°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Termination

SMD/SMT

ECCN Code

EAR99

Resistance

27mOhm

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Contact Plating

Tin

Factory Lead Time

14 Weeks

Fall Time (Typ)

5 ns

Continuous Drain Current (ID)

8A

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2W

Turn On Delay Time

5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

27m Ω @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

24nC @ 8V

Rise Time

15ns

Vgs (Max)

±8V

Max Output Current

2A

Pin Count

6

Threshold Voltage

1V

Gate to Source Voltage (Vgs)

8V

Drain Current-Max (Abs) (ID)

8A

Pulsed Drain Current-Max (IDM)

20A

Dual Supply Voltage

20V

Nominal Vgs

1 V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Vishay Siliconix SI3460BDV-T1-GE3

In stock

SKU: SI3460BDV-T1-GE3-11
Manufacturer

Vishay Siliconix

Pin Count

6

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

2W Ta 3.5W Tc

Turn Off Delay Time

25 ns

Packaging

Tape & Reel (TR)

Published

2014

Operating Temperature

-55°C~150°C TJ

Series

TrenchFET®

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

Pure Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Mount

Surface Mount

Factory Lead Time

14 Weeks

Continuous Drain Current (ID)

6.7A

Threshold Voltage

1V

Power Dissipation

2W

Turn On Delay Time

5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

27m Ω @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

24nC @ 8V

Rise Time

15ns

Vgs (Max)

±8V

Fall Time (Typ)

5 ns

Element Configuration

Single

Number of Channels

1

Gate to Source Voltage (Vgs)

8V

Drain Current-Max (Abs) (ID)

8A

Drain-source On Resistance-Max

0.027Ohm

Drain to Source Breakdown Voltage

20V

Pulsed Drain Current-Max (IDM)

20A

Nominal Vgs

1 V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

Unknown

Operating Mode

ENHANCEMENT MODE

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3460DV-T1-E3

In stock

SKU: SI3460DV-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.1A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.1W Ta

Turn Off Delay Time

70 ns

Terminal Position

DUAL

Operating Temperature

-55°C~150°C TJ

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Resistance

27mOhm

Terminal Finish

Matte Tin (Sn)

Mounting Type

Surface Mount

Mount

Surface Mount

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Peak Reflow Temperature (Cel)

260

Pin Count

6

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.1W

Turn On Delay Time

15 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

27m Ω @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Rise Time

30ns

Vgs (Max)

±8V

Terminal Form

GULL WING

Fall Time (Typ)

30 ns

Continuous Drain Current (ID)

6.8A

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

20V

Height

990.6μm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s)

40

Lead Free

Lead Free

Vishay Siliconix SI3460DV-T1-GE3

In stock

SKU: SI3460DV-T1-GE3-11
Manufacturer

Vishay Siliconix

Power Dissipation (Max)

1.1W Ta

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.1A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

ECCN Code

EAR99

Factory Lead Time

13 Weeks

Turn Off Delay Time

70 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Number of Elements

1

Terminal Position

DUAL

Vgs (Max)

±8V

Fall Time (Typ)

30 ns

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

15 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

27m Ω @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Rise Time

30ns

Terminal Form

GULL WING

Number of Channels

1

Continuous Drain Current (ID)

6.8A

Threshold Voltage

450mV

Gate to Source Voltage (Vgs)

8V

Drain-source On Resistance-Max

0.027Ohm

Drain to Source Breakdown Voltage

20V

Nominal Vgs

450 mV

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3465DV-T1-E3

In stock

SKU: SI3465DV-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.14W Ta

Terminal Finish

Matte Tin (Sn)

Factory Lead Time

21 Weeks

Packaging

Tape & Reel (TR)

Published

2017

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Turn Off Delay Time

19 ns

Terminal Position

DUAL

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

80m Ω @ 4A, 10V

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

6

JESD-30 Code

R-PDSO-G6

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

FET Type

P-Channel

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 5V

Rise Time

13ns

Vgs (Max)

±20V

Fall Time (Typ)

13 ns

Continuous Drain Current (ID)

-4A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

3A

Drain-source On Resistance-Max

0.08Ohm

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3469DV-T1-E3

In stock

SKU: SI3469DV-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.14W Ta

Turn Off Delay Time

50 ns

Terminal Form

GULL WING

Factory Lead Time

14 Weeks

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Resistance

30mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Vgs (Max)

±20V

Fall Time (Typ)

12 ns

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.14W

Turn On Delay Time

10 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

30m Ω @ 6.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Rise Time

12ns

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

6

Continuous Drain Current (ID)

-6.7A

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

5A

Nominal Vgs

-3 V

Height

1mm

Length

3.05mm

Width

1.65mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI3469DV-T1-GE3

In stock

SKU: SI3469DV-T1-GE3-11
Manufacturer

Vishay Siliconix

Terminal Form

GULL WING

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.14W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

50 ns

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Mount

Surface Mount

Factory Lead Time

14 Weeks

Rise Time

12ns

Vgs (Max)

±20V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.14W

Turn On Delay Time

10 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

30m Ω @ 6.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Time@Peak Reflow Temperature-Max (s)

30

Peak Reflow Temperature (Cel)

260

Fall Time (Typ)

35 ns

Continuous Drain Current (ID)

-6.7A

Threshold Voltage

-1V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

5A

Drain-source On Resistance-Max

0.03Ohm

Drain to Source Breakdown Voltage

-20V

Nominal Vgs

-1 V

Radiation Hardening

No

REACH SVHC

Unknown

Pin Count

6

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3473DV-T1-GE3

In stock

SKU: SI3473DV-T1-GE3-11
Manufacturer

Vishay Siliconix

Power Dissipation (Max)

1.1W Ta

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Weight

19.986414mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.9A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

ECCN Code

EAR99

Mount

Surface Mount

Turn Off Delay Time

130 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Number of Elements

1

Additional Feature

ULTRA LOW RESISTANCE

Vgs(th) (Max) @ Id

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 4.5V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

25 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

23m Ω @ 7.9A, 4.5V

Terminal Position

DUAL

Terminal Form

GULL WING

Rise Time

50ns

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Fall Time (Typ)

110 ns

Continuous Drain Current (ID)

-5.9A

Gate to Source Voltage (Vgs)

8V

Drain-source On Resistance-Max

0.023Ohm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI3474DV-T1-GE3

In stock

SKU: SI3474DV-T1-GE3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

10 ns

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.8A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Terminal Position

DUAL

Factory Lead Time

14 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2017

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Power Dissipation (Max)

3.6W Tc

Terminal Form

GULL WING

Rise Time

68ns

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2W

Turn On Delay Time

8 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

126m Ω @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

196pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 10V

Number of Channels

1

Element Configuration

Single

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

2.8A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

3.8A

Drain to Source Breakdown Voltage

100V

Max Junction Temperature (Tj)

150°C

Height

1.1mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant