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Discrete Semiconductors
Vishay Siliconix SI3456BDV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Supplier Device Package |
6-TSOP |
Weight |
19.986414mg |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
1.1W Ta |
Number of Channels |
1 |
Turn Off Delay Time |
25 ns |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
Series |
TrenchFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
35MOhm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
4.5A |
Turn On Delay Time |
10 ns |
Rds On (Max) @ Id, Vgs |
35mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
Rise Time |
15ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Element Configuration |
Single |
Drain to Source Resistance |
35mOhm |
Rds On Max |
35 mΩ |
Height |
1mm |
Length |
3.05mm |
Width |
1.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
Vishay Siliconix SI3457BDV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3.7A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.14W Ta |
Turn Off Delay Time |
30 ns |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
GULL WING |
Rise Time |
10ns |
Vgs (Max) |
±20V |
Pin Count |
6 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.14W |
Turn On Delay Time |
7 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
54m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Fall Time (Typ) |
22 ns |
Continuous Drain Current (ID) |
-3.7A |
Threshold Voltage |
-3V |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.054Ohm |
Drain to Source Breakdown Voltage |
30V |
Nominal Vgs |
-3 V |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI3458DV-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Supplier Device Package |
6-TSOP |
Weight |
19.986414mg |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2W Ta |
Element Configuration |
Single |
Turn Off Delay Time |
20 ns |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Series |
TrenchFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
3.2A |
Turn On Delay Time |
10 ns |
Rds On (Max) @ Id, Vgs |
100mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA (Min) |
Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
Rise Time |
10ns |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Power Dissipation |
2W |
Drain to Source Resistance |
100mOhm |
Rds On Max |
100 mΩ |
Height |
1mm |
Length |
3.05mm |
Width |
1.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
Vishay Siliconix SI3460BDV-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
2W Ta 3.5W Tc |
Turn Off Delay Time |
25 ns |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Operating Temperature |
-55°C~150°C TJ |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
27mOhm |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Contact Plating |
Tin |
Factory Lead Time |
14 Weeks |
Fall Time (Typ) |
5 ns |
Continuous Drain Current (ID) |
8A |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2W |
Turn On Delay Time |
5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
27m Ω @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 8V |
Rise Time |
15ns |
Vgs (Max) |
±8V |
Max Output Current |
2A |
Pin Count |
6 |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
8V |
Drain Current-Max (Abs) (ID) |
8A |
Pulsed Drain Current-Max (IDM) |
20A |
Dual Supply Voltage |
20V |
Nominal Vgs |
1 V |
Height |
1mm |
Length |
3.05mm |
Width |
1.65mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Vishay Siliconix SI3460BDV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Pin Count |
6 |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
2W Ta 3.5W Tc |
Turn Off Delay Time |
25 ns |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
Operating Temperature |
-55°C~150°C TJ |
Series |
TrenchFET® |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Finish |
Pure Matte Tin (Sn) |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
Continuous Drain Current (ID) |
6.7A |
Threshold Voltage |
1V |
Power Dissipation |
2W |
Turn On Delay Time |
5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
27m Ω @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 8V |
Rise Time |
15ns |
Vgs (Max) |
±8V |
Fall Time (Typ) |
5 ns |
Element Configuration |
Single |
Number of Channels |
1 |
Gate to Source Voltage (Vgs) |
8V |
Drain Current-Max (Abs) (ID) |
8A |
Drain-source On Resistance-Max |
0.027Ohm |
Drain to Source Breakdown Voltage |
20V |
Pulsed Drain Current-Max (IDM) |
20A |
Nominal Vgs |
1 V |
Height |
1mm |
Length |
3.05mm |
Width |
1.65mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
Operating Mode |
ENHANCEMENT MODE |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI3460DV-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.1A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.1W Ta |
Turn Off Delay Time |
70 ns |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~150°C TJ |
Published |
2009 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Resistance |
27mOhm |
Terminal Finish |
Matte Tin (Sn) |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 4.5V |
Peak Reflow Temperature (Cel) |
260 |
Pin Count |
6 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.1W |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
27m Ω @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id |
450mV @ 1mA (Min) |
Rise Time |
30ns |
Vgs (Max) |
±8V |
Terminal Form |
GULL WING |
Fall Time (Typ) |
30 ns |
Continuous Drain Current (ID) |
6.8A |
Gate to Source Voltage (Vgs) |
8V |
Drain to Source Breakdown Voltage |
20V |
Height |
990.6μm |
Length |
3.05mm |
Width |
1.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Lead Free |
Lead Free |
Vishay Siliconix SI3460DV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation (Max) |
1.1W Ta |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.1A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
ECCN Code |
EAR99 |
Factory Lead Time |
13 Weeks |
Turn Off Delay Time |
70 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
TrenchFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
Number of Elements |
1 |
Terminal Position |
DUAL |
Vgs (Max) |
±8V |
Fall Time (Typ) |
30 ns |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
27m Ω @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id |
450mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 4.5V |
Rise Time |
30ns |
Terminal Form |
GULL WING |
Number of Channels |
1 |
Continuous Drain Current (ID) |
6.8A |
Threshold Voltage |
450mV |
Gate to Source Voltage (Vgs) |
8V |
Drain-source On Resistance-Max |
0.027Ohm |
Drain to Source Breakdown Voltage |
20V |
Nominal Vgs |
450 mV |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI3465DV-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.14W Ta |
Terminal Finish |
Matte Tin (Sn) |
Factory Lead Time |
21 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2017 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Turn Off Delay Time |
19 ns |
Terminal Position |
DUAL |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
80m Ω @ 4A, 10V |
Reach Compliance Code |
unknown |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
6 |
JESD-30 Code |
R-PDSO-G6 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
5.5nC @ 5V |
Rise Time |
13ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
13 ns |
Continuous Drain Current (ID) |
-4A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
3A |
Drain-source On Resistance-Max |
0.08Ohm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI3469DV-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.14W Ta |
Turn Off Delay Time |
50 ns |
Terminal Form |
GULL WING |
Factory Lead Time |
14 Weeks |
Published |
2009 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Resistance |
30mOhm |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
12 ns |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.14W |
Turn On Delay Time |
10 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
30m Ω @ 6.7A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Rise Time |
12ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
6 |
Continuous Drain Current (ID) |
-6.7A |
Threshold Voltage |
-3V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
5A |
Nominal Vgs |
-3 V |
Height |
1mm |
Length |
3.05mm |
Width |
1.65mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix SI3469DV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.14W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
50 ns |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
Rise Time |
12ns |
Vgs (Max) |
±20V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.14W |
Turn On Delay Time |
10 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
30m Ω @ 6.7A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Peak Reflow Temperature (Cel) |
260 |
Fall Time (Typ) |
35 ns |
Continuous Drain Current (ID) |
-6.7A |
Threshold Voltage |
-1V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
5A |
Drain-source On Resistance-Max |
0.03Ohm |
Drain to Source Breakdown Voltage |
-20V |
Nominal Vgs |
-1 V |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
Pin Count |
6 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI3473DV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation (Max) |
1.1W Ta |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
19.986414mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.9A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Turn Off Delay Time |
130 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
TrenchFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
Number of Elements |
1 |
Additional Feature |
ULTRA LOW RESISTANCE |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
33nC @ 4.5V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
25 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
23m Ω @ 7.9A, 4.5V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Rise Time |
50ns |
Drain to Source Voltage (Vdss) |
12V |
Vgs (Max) |
±8V |
Fall Time (Typ) |
110 ns |
Continuous Drain Current (ID) |
-5.9A |
Gate to Source Voltage (Vgs) |
8V |
Drain-source On Resistance-Max |
0.023Ohm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI3474DV-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
10 ns |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3.8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Terminal Position |
DUAL |
Factory Lead Time |
14 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2017 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Power Dissipation (Max) |
3.6W Tc |
Terminal Form |
GULL WING |
Rise Time |
68ns |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2W |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
126m Ω @ 2A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
196pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
10.4nC @ 10V |
Number of Channels |
1 |
Element Configuration |
Single |
Fall Time (Typ) |
20 ns |
Continuous Drain Current (ID) |
2.8A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
3.8A |
Drain to Source Breakdown Voltage |
100V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |