Manufacturer	Vishay Siliconix
Element Configuration	Single
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Current - Continuous Drain (Id) @ 25℃	950mA Tc
Drive Voltage (Max Rds On, Min Rds On)	6V 10V
Number of Elements	2
Turn Off Delay Time	23 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation (Max)	2W Ta 3.2W Tc
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Mounting Type	Surface Mount
Mount	Surface Mount
Continuous Drain Current (ID)	-950mA
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	29ns
Drain to Source Voltage (Vdss)	200V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn On Delay Time	14 ns
Power Dissipation	2W
Drain to Source Breakdown Voltage	-200V
Input Capacitance	500pF
Drain to Source Resistance	1.61Ohm
Rds On Max	1.61 Ω
Height	1mm
Length	3.05mm

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	2W Ta 4.2W Tc
Pin Count	6
Factory Lead Time	14 Weeks
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Turn Off Delay Time	30 ns
Number of Channels	1
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	-6.1A
Power Dissipation	2W
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	15ns

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	4.7A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	1.14W Ta
Terminal Finish	Pure Matte Tin (Sn)
Turn Off Delay Time	71 ns
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Mounting Type	Surface Mount
Mount	Surface Mount
Vgs(th) (Max) @ Id	3V @ 250μA
Terminal Form	GULL WING
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.14W
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	10ns
Terminal Position	DUAL
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Continuous Drain Current (ID)	4.7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.035Ohm
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No

Manufacturer	Vishay Siliconix
Turn Off Delay Time	125 ns
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	5.3A Ta
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Additional Feature	ULTRA LOW RESISTANCE
Mount	Surface Mount
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Power Dissipation (Max)	1.1W Ta
Terminal Position	DUAL
Gate Charge (Qg) (Max) @ Vgs	32nC @ 4.5V
Rise Time	40ns
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Terminal Form	GULL WING
Element Configuration	Single
Vgs (Max)	±8V
Fall Time (Typ)	85 ns
Continuous Drain Current (ID)	5.3A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.027Ohm
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Discrete Semiconductors