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Discrete Semiconductors
Vishay Siliconix SI4170DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation |
3W |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-SO |
Weight |
540.001716mg |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Turn Off Delay Time |
45 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
3W Ta 6W Tc |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
TrenchFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Vgs(th) (Max) @ Id |
2.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4355pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Rise Time |
17ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
20 ns |
Continuous Drain Current (ID) |
30A |
FET Type |
N-Channel |
Turn On Delay Time |
36 ns |
Input Capacitance |
4.355nF |
Drain to Source Resistance |
3.5mOhm |
Rds On Max |
3.5 mΩ |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Rds On (Max) @ Id, Vgs |
3.5mOhm @ 15A, 10V |
Lead Free |
Lead Free |
Vishay Siliconix SI4196DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
15 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Power Dissipation (Max) |
2W Ta 4.6W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
Series |
TrenchFET® |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
27m Ω @ 8A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
830pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 8V |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±8V |
Continuous Drain Current (ID) |
8A |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4320DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
17A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.6W Ta |
Terminal Form |
GULL WING |
Turn Off Delay Time |
107 ns |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
PURE MATTE TIN |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Factory Lead Time |
13 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
70nC @ 4.5V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.6W |
Turn On Delay Time |
27 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
6500pF @ 15V |
Rise Time |
21ns |
Vgs (Max) |
±20V |
Peak Reflow Temperature (Cel) |
260 |
Fall Time (Typ) |
43 ns |
Continuous Drain Current (ID) |
17A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.003Ohm |
Drain to Source Breakdown Voltage |
30V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
Pin Count |
8 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4346DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.9A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.31W Ta |
Turn Off Delay Time |
40 ns |
Peak Reflow Temperature (Cel) |
260 |
Contact Plating |
Tin |
Published |
2017 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
23mOhm |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
30 |
Fall Time (Typ) |
11 ns |
Continuous Drain Current (ID) |
8A |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.31W |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
23m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
Rise Time |
11ns |
Vgs (Max) |
±12V |
Pin Count |
8 |
Number of Channels |
1 |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
12V |
Drain Current-Max (Abs) (ID) |
5.9A |
Drain to Source Breakdown Voltage |
30V |
Nominal Vgs |
2 V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix SI4354DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.5W Ta |
Terminal Finish |
MATTE TIN |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Turn Off Delay Time |
28 ns |
Terminal Position |
DUAL |
Rds On (Max) @ Id, Vgs |
16.5m Ω @ 9.5A, 10V |
Vgs(th) (Max) @ Id |
1.6V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
8 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 4.5V |
Rise Time |
10ns |
Vgs (Max) |
±12V |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
9.5A |
Gate to Source Voltage (Vgs) |
12V |
Drain to Source Breakdown Voltage |
30V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4354DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Form |
GULL WING |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.5W Ta |
Turn Off Delay Time |
28 ns |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Operating Temperature |
-55°C~150°C TJ |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Terminal Position |
DUAL |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Vgs(th) (Max) @ Id |
1.6V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 4.5V |
JESD-30 Code |
R-PDSO-G8 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
16.5m Ω @ 9.5A, 10V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Peak Reflow Temperature (Cel) |
260 |
Rise Time |
10ns |
Vgs (Max) |
±12V |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
9.5A |
Gate to Source Voltage (Vgs) |
12V |
Drain-source On Resistance-Max |
0.0165Ohm |
Drain to Source Breakdown Voltage |
30V |
Radiation Hardening |
No |
Pin Count |
8 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4368DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Position |
DUAL |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
17A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Turn Off Delay Time |
172 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
1.6W Ta |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
PURE MATTE TIN |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
8340pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
80nC @ 4.5V |
Pin Count |
8 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
25 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3.2m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 250μA |
Peak Reflow Temperature (Cel) |
260 |
Terminal Form |
GULL WING |
Rise Time |
20ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±12V |
Fall Time (Typ) |
41 ns |
Continuous Drain Current (ID) |
17A |
Gate to Source Voltage (Vgs) |
12V |
Drain-source On Resistance-Max |
0.0032Ohm |
DS Breakdown Voltage-Min |
30V |
Radiation Hardening |
No |
Time@Peak Reflow Temperature-Max (s) |
30 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4378DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
19A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.6W Ta |
Turn Off Delay Time |
140 ns |
Packaging |
Tape & Reel (TR) |
Published |
2011 |
Operating Temperature |
-55°C~150°C TJ |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
2.7mOhm |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
15 Weeks |
Vgs (Max) |
±12V |
Fall Time (Typ) |
65 ns |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.6W |
Turn On Delay Time |
85 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.7m Ω @ 25A, 4.5V |
Vgs(th) (Max) @ Id |
1.8V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
8500pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
55nC @ 4.5V |
Rise Time |
65ns |
Pin Count |
8 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Continuous Drain Current (ID) |
25A |
Threshold Voltage |
600mV |
Gate to Source Voltage (Vgs) |
12V |
Drain to Source Breakdown Voltage |
20V |
Nominal Vgs |
600 mV |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Vishay Siliconix SI4386DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.47W Ta |
Terminal Form |
GULL WING |
Turn Off Delay Time |
35 ns |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
7mOhm |
Terminal Position |
DUAL |
Contact Plating |
Tin |
Factory Lead Time |
14 Weeks |
Rise Time |
9ns |
Time@Peak Reflow Temperature-Max (s) |
30 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.47W |
Turn On Delay Time |
12 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7m Ω @ 16A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
9 ns |
Peak Reflow Temperature (Cel) |
260 |
Continuous Drain Current (ID) |
16A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Nominal Vgs |
2 V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Pin Count |
8 |
Lead Free |
Lead Free |
Vishay Siliconix SI4386DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
35 ns |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Terminal Form |
GULL WING |
Factory Lead Time |
14 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Power Dissipation (Max) |
1.47W Ta |
Peak Reflow Temperature (Cel) |
260 |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
12 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7m Ω @ 16A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
Rise Time |
9ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
8 |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
16A |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.007Ohm |
DS Breakdown Voltage-Min |
30V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4390DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
8.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.4W Ta |
Terminal Finish |
PURE MATTE TIN |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Turn Off Delay Time |
43 ns |
Terminal Position |
DUAL |
Rds On (Max) @ Id, Vgs |
9.5m Ω @ 12.5A, 10V |
Vgs(th) (Max) @ Id |
2.8V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
8 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.4W |
Turn On Delay Time |
16 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
Rise Time |
6ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
14 ns |
Continuous Drain Current (ID) |
8.5A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0095Ohm |
Drain to Source Breakdown Voltage |
30V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4398DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
80 ns |
Min Operating Temperature |
-55°C |
Max Operating Temperature |
150°C |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Obsolete |
Published |
2016 |
Packaging |
Tape & Reel (TR) |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
1.6W Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Current - Continuous Drain (Id) @ 25℃ |
19A Ta |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
FET Type |
N-Channel |
Fall Time (Typ) |
15 ns |
Rds On Max |
2.8 mΩ |
Drain to Source Resistance |
2.8mOhm |
Input Capacitance |
5.62nF |
Drain to Source Breakdown Voltage |
20V |
Gate to Source Voltage (Vgs) |
20V |
Continuous Drain Current (ID) |
19A |
Vgs (Max) |
±20V |
Power Dissipation |
1.6W |
Drain to Source Voltage (Vdss) |
20V |
Rise Time |
15ns |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
5620pF @ 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Rds On (Max) @ Id, Vgs |
2.8mOhm @ 25A, 10V |
RoHS Status |
ROHS3 Compliant |