Showing 14653–14664 of 15245 results

Discrete Semiconductors

Vishay Siliconix SI4170DY-T1-GE3

In stock

SKU: SI4170DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Power Dissipation

3W

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Supplier Device Package

8-SO

Weight

540.001716mg

Current - Continuous Drain (Id) @ 25℃

30A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Turn Off Delay Time

45 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

3W Ta 6W Tc

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Mounting Type

Surface Mount

Mount

Surface Mount

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Vgs(th) (Max) @ Id

2.6V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4355pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Rise Time

17ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

30A

FET Type

N-Channel

Turn On Delay Time

36 ns

Input Capacitance

4.355nF

Drain to Source Resistance

3.5mOhm

Rds On Max

3.5 mΩ

Height

1.5mm

Length

5mm

Width

4mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Rds On (Max) @ Id, Vgs

3.5mOhm @ 15A, 10V

Lead Free

Lead Free

Vishay Siliconix SI4196DY-T1-GE3

In stock

SKU: SI4196DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Factory Lead Time

15 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25℃

8A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Power Dissipation (Max)

2W Ta 4.6W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2015

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

27m Ω @ 8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

22nC @ 8V

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±8V

Continuous Drain Current (ID)

8A

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4320DY-T1-GE3

In stock

SKU: SI4320DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

17A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.6W Ta

Terminal Form

GULL WING

Turn Off Delay Time

107 ns

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Terminal Position

DUAL

Mount

Surface Mount

Factory Lead Time

13 Weeks

Gate Charge (Qg) (Max) @ Vgs

70nC @ 4.5V

Time@Peak Reflow Temperature-Max (s)

30

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.6W

Turn On Delay Time

27 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3m Ω @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

6500pF @ 15V

Rise Time

21ns

Vgs (Max)

±20V

Peak Reflow Temperature (Cel)

260

Fall Time (Typ)

43 ns

Continuous Drain Current (ID)

17A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.003Ohm

Drain to Source Breakdown Voltage

30V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

Pin Count

8

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4346DY-T1-E3

In stock

SKU: SI4346DY-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.9A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.31W Ta

Turn Off Delay Time

40 ns

Peak Reflow Temperature (Cel)

260

Contact Plating

Tin

Published

2017

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

23mOhm

Terminal Position

DUAL

Terminal Form

GULL WING

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

30

Fall Time (Typ)

11 ns

Continuous Drain Current (ID)

8A

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.31W

Turn On Delay Time

9 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

23m Ω @ 8A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Rise Time

11ns

Vgs (Max)

±12V

Pin Count

8

Number of Channels

1

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

12V

Drain Current-Max (Abs) (ID)

5.9A

Drain to Source Breakdown Voltage

30V

Nominal Vgs

2 V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SI4354DY-T1-E3

In stock

SKU: SI4354DY-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.5W Ta

Terminal Finish

MATTE TIN

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Turn Off Delay Time

28 ns

Terminal Position

DUAL

Rds On (Max) @ Id, Vgs

16.5m Ω @ 9.5A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250μA

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.5W

Turn On Delay Time

8 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

Rise Time

10ns

Vgs (Max)

±12V

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

9.5A

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

30V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4354DY-T1-GE3

In stock

SKU: SI4354DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Terminal Form

GULL WING

Package / Case

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.5W Ta

Turn Off Delay Time

28 ns

Packaging

Tape & Reel (TR)

Published

2013

Operating Temperature

-55°C~150°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Position

DUAL

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs(th) (Max) @ Id

1.6V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

JESD-30 Code

R-PDSO-G8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.5W

Turn On Delay Time

8 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

16.5m Ω @ 9.5A, 10V

Time@Peak Reflow Temperature-Max (s)

40

Peak Reflow Temperature (Cel)

260

Rise Time

10ns

Vgs (Max)

±12V

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

9.5A

Gate to Source Voltage (Vgs)

12V

Drain-source On Resistance-Max

0.0165Ohm

Drain to Source Breakdown Voltage

30V

Radiation Hardening

No

Pin Count

8

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4368DY-T1-GE3

In stock

SKU: SI4368DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Terminal Position

DUAL

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

17A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Turn Off Delay Time

172 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

1.6W Ta

Packaging

Tape & Reel (TR)

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Mount

Surface Mount

Factory Lead Time

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds

8340pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

80nC @ 4.5V

Pin Count

8

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

25 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

3.2m Ω @ 25A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250μA

Peak Reflow Temperature (Cel)

260

Terminal Form

GULL WING

Rise Time

20ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±12V

Fall Time (Typ)

41 ns

Continuous Drain Current (ID)

17A

Gate to Source Voltage (Vgs)

12V

Drain-source On Resistance-Max

0.0032Ohm

DS Breakdown Voltage-Min

30V

Radiation Hardening

No

Time@Peak Reflow Temperature-Max (s)

30

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4378DY-T1-E3

In stock

SKU: SI4378DY-T1-E3-11
Manufacturer

Vishay Siliconix

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

19A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.6W Ta

Turn Off Delay Time

140 ns

Packaging

Tape & Reel (TR)

Published

2011

Operating Temperature

-55°C~150°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

2.7mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Mount

Surface Mount

Factory Lead Time

15 Weeks

Vgs (Max)

±12V

Fall Time (Typ)

65 ns

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.6W

Turn On Delay Time

85 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.7m Ω @ 25A, 4.5V

Vgs(th) (Max) @ Id

1.8V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

8500pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

55nC @ 4.5V

Rise Time

65ns

Pin Count

8

Time@Peak Reflow Temperature-Max (s)

30

Continuous Drain Current (ID)

25A

Threshold Voltage

600mV

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

20V

Nominal Vgs

600 mV

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Vishay Siliconix SI4386DY-T1-E3

In stock

SKU: SI4386DY-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

11A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.47W Ta

Terminal Form

GULL WING

Turn Off Delay Time

35 ns

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

7mOhm

Terminal Position

DUAL

Contact Plating

Tin

Factory Lead Time

14 Weeks

Rise Time

9ns

Time@Peak Reflow Temperature-Max (s)

30

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.47W

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

7m Ω @ 16A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±20V

Fall Time (Typ)

9 ns

Peak Reflow Temperature (Cel)

260

Continuous Drain Current (ID)

16A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Nominal Vgs

2 V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Pin Count

8

Lead Free

Lead Free

Vishay Siliconix SI4386DY-T1-GE3

In stock

SKU: SI4386DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

35 ns

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

11A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Terminal Form

GULL WING

Factory Lead Time

14 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2015

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Position

DUAL

Power Dissipation (Max)

1.47W Ta

Peak Reflow Temperature (Cel)

260

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

7m Ω @ 16A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Rise Time

9ns

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

16A

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.007Ohm

DS Breakdown Voltage-Min

30V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4390DY-T1-GE3

In stock

SKU: SI4390DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.4W Ta

Terminal Finish

PURE MATTE TIN

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Turn Off Delay Time

43 ns

Terminal Position

DUAL

Rds On (Max) @ Id, Vgs

9.5m Ω @ 12.5A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250μA

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

8

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.4W

Turn On Delay Time

16 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Rise Time

6ns

Vgs (Max)

±20V

Fall Time (Typ)

14 ns

Continuous Drain Current (ID)

8.5A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0095Ohm

Drain to Source Breakdown Voltage

30V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4398DY-T1-GE3

In stock

SKU: SI4398DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

80 ns

Min Operating Temperature

-55°C

Max Operating Temperature

150°C

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Obsolete

Published

2016

Packaging

Tape & Reel (TR)

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

1.6W Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Current - Continuous Drain (Id) @ 25℃

19A Ta

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154, 3.90mm Width)

Mounting Type

Surface Mount

Mount

Surface Mount

FET Type

N-Channel

Fall Time (Typ)

15 ns

Rds On Max

2.8 mΩ

Drain to Source Resistance

2.8mOhm

Input Capacitance

5.62nF

Drain to Source Breakdown Voltage

20V

Gate to Source Voltage (Vgs)

20V

Continuous Drain Current (ID)

19A

Vgs (Max)

±20V

Power Dissipation

1.6W

Drain to Source Voltage (Vdss)

20V

Rise Time

15ns

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

5620pF @ 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Rds On (Max) @ Id, Vgs

2.8mOhm @ 25A, 10V

RoHS Status

ROHS3 Compliant