Showing 14665–14676 of 15245 results

Discrete Semiconductors

Vishay Siliconix SI4401DY-T1-GE3

In stock

SKU: SI4401DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Terminal Finish

MATTE TIN

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

122 ns

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs(th) (Max) @ Id

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs

50nC @ 5V

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

Turn On Delay Time

17 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

15.5m Ω @ 10.5A, 10V

Terminal Form

GULL WING

Terminal Position

DUAL

Rise Time

18ns

Vgs (Max)

±20V

Fall Time (Typ)

55 ns

Continuous Drain Current (ID)

-8.7A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0155Ohm

Drain to Source Breakdown Voltage

40V

Radiation Hardening

No

Peak Reflow Temperature (Cel)

260

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4406DY-T1-E3

In stock

SKU: SI4406DY-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

13A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.6W Ta

Turn Off Delay Time

100 ns

Terminal Form

GULL WING

Mount

Surface Mount

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Position

DUAL

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Rise Time

15ns

Drain to Source Voltage (Vdss)

30V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.6W

Turn On Delay Time

21 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

4.5m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Vgs (Max)

±20V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

13A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0045Ohm

DS Breakdown Voltage-Min

30V

Height

3.18mm

Length

4.88mm

Width

3.91mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4412ADY-T1-GE3

In stock

SKU: SI4412ADY-T1-GE3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.3W Ta

Turn Off Delay Time

26 ns

Terminal Position

DUAL

Operating Temperature

-55°C~150°C TJ

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Mounting Type

Surface Mount

Mount

Surface Mount

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Peak Reflow Temperature (Cel)

260

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.5W

Turn On Delay Time

15 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

24m Ω @ 8A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA (Min)

Rise Time

6ns

Vgs (Max)

±20V

Terminal Form

GULL WING

Fall Time (Typ)

10 ns

Continuous Drain Current (ID)

5.8A

JEDEC-95 Code

MS-012AA

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.024Ohm

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

30A

Radiation Hardening

No

Time@Peak Reflow Temperature-Max (s)

30

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4413DDY-T1-GE3

In stock

SKU: SI4413DDY-T1-GE3-11
Manufacturer

Vishay Siliconix

Factory Lead Time

14 Weeks

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package

8-SOIC

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Operating Temperature

-55°C~125°C

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

5.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4780pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

RoHS Status

Non-RoHS Compliant

Vishay Siliconix SI4418DY-T1-GE3

In stock

SKU: SI4418DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Terminal Position

DUAL

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

2.3A Ta

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

40 ns

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs(th) (Max) @ Id

4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

Turn On Delay Time

15 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 3A, 10V

Peak Reflow Temperature (Cel)

260

Terminal Form

GULL WING

Rise Time

15ns

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

2.3A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.0023A

Drain to Source Breakdown Voltage

200V

Radiation Hardening

No

Time@Peak Reflow Temperature-Max (s)

30

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4420BDY-T1-E3

In stock

SKU: SI4420BDY-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.4W Ta

Turn Off Delay Time

40 ns

Terminal Form

GULL WING

Operating Temperature

-55°C~150°C TJ

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

8.5mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Mount

Surface Mount

Factory Lead Time

14 Weeks

Vgs (Max)

±20V

Time@Peak Reflow Temperature-Max (s)

30

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.4W

Turn On Delay Time

15 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

8.5m Ω @ 13.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Rise Time

11ns

Forward Voltage

750mV

Fall Time (Typ)

12 ns

Peak Reflow Temperature (Cel)

260

Continuous Drain Current (ID)

9.5A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Pin Count

8

Lead Free

Lead Free

Vishay Siliconix SI4423DY-T1-E3

In stock

SKU: SI4423DY-T1-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

506.605978mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

10A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Turn Off Delay Time

460 ns

Peak Reflow Temperature (Cel)

260

Operating Temperature

-55°C~150°C TJ

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

7.5mOhm

Terminal Finish

MATTE TIN

Terminal Position

DUAL

Terminal Form

GULL WING

Mount

Surface Mount

Factory Lead Time

14 Weeks

Vgs (Max)

±8V

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

Turn On Delay Time

75 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

7.5m Ω @ 14A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 600μA

Gate Charge (Qg) (Max) @ Vgs

175nC @ 5V

Rise Time

165ns

Fall Time (Typ)

165 ns

Continuous Drain Current (ID)

-14A

Time@Peak Reflow Temperature-Max (s)

40

Threshold Voltage

-400mV

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

20V

Nominal Vgs

-400 mV

Height

1.5494mm

Length

4.9784mm

Width

3.9878mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Vishay Siliconix SI4425BDY-T1-E3

In stock

SKU: SI4425BDY-T1-E3-11
Manufacturer

Vishay Siliconix

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8.8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

100 ns

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

12mOhm

Terminal Position

DUAL

Terminal Form

GULL WING

Contact Plating

Tin

Factory Lead Time

14 Weeks

Vgs (Max)

±20V

Fall Time (Typ)

13 ns

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

Turn On Delay Time

15 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

12m Ω @ 11.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Rise Time

13ns

Drain to Source Voltage (Vdss)

30V

Pin Count

8

Time@Peak Reflow Temperature-Max (s)

20

Continuous Drain Current (ID)

-11.4A

Threshold Voltage

-400mV

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-30V

Nominal Vgs

-400 mV

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Vishay Siliconix SI4435FDY-T1-GE3

In stock

SKU: SI4435FDY-T1-GE3-11
Manufacturer

Vishay Siliconix

Factory Lead Time

14 Weeks

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25℃

12.6A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

4.8W Tc

Turn Off Delay Time

23 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2018

Series

TrenchFET® Gen III

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Number of Channels

1

Power Dissipation

2.2W

Turn On Delay Time

9 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

19m Ω @ 9A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

-8.6A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-30V

Max Junction Temperature (Tj)

150°C

Height

1.75mm

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4438DY-T1-GE3

In stock

SKU: SI4438DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

36A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.5W Ta 7.8W Tc

Turn Off Delay Time

47 ns

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

40

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

17 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.7m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4645pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

126nC @ 10V

Rise Time

86ns

Pin Count

8

Number of Channels

1

Fall Time (Typ)

10 ns

Continuous Drain Current (ID)

36A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

24A

Drain-source On Resistance-Max

0.0027Ohm

Pulsed Drain Current-Max (IDM)

70A

DS Breakdown Voltage-Min

30V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4442DY-T1-GE3

In stock

SKU: SI4442DY-T1-GE3-11
Manufacturer

Vishay Siliconix

Terminal Position

DUAL

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

506.605978mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

15A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 10V

Number of Elements

1

Turn Off Delay Time

125 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

1.6W Ta

Packaging

Tape & Reel (TR)

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Mount

Surface Mount

Factory Lead Time

14 Weeks

Rise Time

11ns

Vgs (Max)

±12V

Pin Count

8

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

17 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

4.5m Ω @ 22A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Peak Reflow Temperature (Cel)

260

Terminal Form

GULL WING

Fall Time (Typ)

47 ns

Continuous Drain Current (ID)

15A

Gate to Source Voltage (Vgs)

12V

Drain-source On Resistance-Max

0.0045Ohm

Drain to Source Breakdown Voltage

30V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

Time@Peak Reflow Temperature-Max (s)

30

RoHS Status

ROHS3 Compliant

Vishay Siliconix SI4448DY-T1-E3

In stock

SKU: SI4448DY-T1-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

3.5W Ta 7.8W Tc

Terminal Form

GULL WING

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Position

DUAL

Turn Off Delay Time

240 ns

Peak Reflow Temperature (Cel)

260

Input Capacitance (Ciss) (Max) @ Vds

12350pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

150nC @ 4.5V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.5W

Turn On Delay Time

38 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.7m Ω @ 20A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Rise Time

22ns

Vgs (Max)

±8V

Fall Time (Typ)

33 ns

Continuous Drain Current (ID)

32A

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

12V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant