Showing 14665–14676 of 15245 results
Filter by price
Filter by manufacturer
Series
Discrete Semiconductors
Vishay Siliconix SI4401DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Finish |
MATTE TIN |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
8.7A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.5W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
122 ns |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Vgs(th) (Max) @ Id |
1V @ 250μA (Min) |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 5V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
8 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.5W |
Turn On Delay Time |
17 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
15.5m Ω @ 10.5A, 10V |
Terminal Form |
GULL WING |
Terminal Position |
DUAL |
Rise Time |
18ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
55 ns |
Continuous Drain Current (ID) |
-8.7A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0155Ohm |
Drain to Source Breakdown Voltage |
40V |
Radiation Hardening |
No |
Peak Reflow Temperature (Cel) |
260 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4406DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.6W Ta |
Turn Off Delay Time |
100 ns |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Published |
2009 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Rise Time |
15ns |
Drain to Source Voltage (Vdss) |
30V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.6W |
Turn On Delay Time |
21 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4.5m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
8 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
13A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0045Ohm |
DS Breakdown Voltage-Min |
30V |
Height |
3.18mm |
Length |
4.88mm |
Width |
3.91mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4412ADY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.3W Ta |
Turn Off Delay Time |
26 ns |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~150°C TJ |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
PURE MATTE TIN |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Peak Reflow Temperature (Cel) |
260 |
Pin Count |
8 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
24m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA (Min) |
Rise Time |
6ns |
Vgs (Max) |
±20V |
Terminal Form |
GULL WING |
Fall Time (Typ) |
10 ns |
Continuous Drain Current (ID) |
5.8A |
JEDEC-95 Code |
MS-012AA |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.024Ohm |
Drain to Source Breakdown Voltage |
30V |
Pulsed Drain Current-Max (IDM) |
30A |
Radiation Hardening |
No |
Time@Peak Reflow Temperature-Max (s) |
30 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4413DDY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
14 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Supplier Device Package |
8-SOIC |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Operating Temperature |
-55°C~125°C |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
5.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
1.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4780pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
114nC @ 10V |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SI4418DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Position |
DUAL |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.5W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
40 ns |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
PURE MATTE TIN |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Pin Count |
8 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.5W |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
130m Ω @ 3A, 10V |
Peak Reflow Temperature (Cel) |
260 |
Terminal Form |
GULL WING |
Rise Time |
15ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
20 ns |
Continuous Drain Current (ID) |
2.3A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.0023A |
Drain to Source Breakdown Voltage |
200V |
Radiation Hardening |
No |
Time@Peak Reflow Temperature-Max (s) |
30 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4420BDY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.4W Ta |
Turn Off Delay Time |
40 ns |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~150°C TJ |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
8.5mOhm |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
Vgs (Max) |
±20V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.4W |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
8.5m Ω @ 13.5A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
Rise Time |
11ns |
Forward Voltage |
750mV |
Fall Time (Typ) |
12 ns |
Peak Reflow Temperature (Cel) |
260 |
Continuous Drain Current (ID) |
9.5A |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Pin Count |
8 |
Lead Free |
Lead Free |
Vishay Siliconix SI4423DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
506.605978mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.5W Ta |
Turn Off Delay Time |
460 ns |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2009 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
7.5mOhm |
Terminal Finish |
MATTE TIN |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
Vgs (Max) |
±8V |
Pin Count |
8 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.5W |
Turn On Delay Time |
75 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.5m Ω @ 14A, 4.5V |
Vgs(th) (Max) @ Id |
900mV @ 600μA |
Gate Charge (Qg) (Max) @ Vgs |
175nC @ 5V |
Rise Time |
165ns |
Fall Time (Typ) |
165 ns |
Continuous Drain Current (ID) |
-14A |
Time@Peak Reflow Temperature-Max (s) |
40 |
Threshold Voltage |
-400mV |
Gate to Source Voltage (Vgs) |
8V |
Drain to Source Breakdown Voltage |
20V |
Nominal Vgs |
-400 mV |
Height |
1.5494mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Vishay Siliconix SI4425BDY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Peak Reflow Temperature (Cel) |
260 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
8.8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.5W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
100 ns |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
12mOhm |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Contact Plating |
Tin |
Factory Lead Time |
14 Weeks |
Vgs (Max) |
±20V |
Fall Time (Typ) |
13 ns |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.5W |
Turn On Delay Time |
15 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
12m Ω @ 11.4A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Rise Time |
13ns |
Drain to Source Voltage (Vdss) |
30V |
Pin Count |
8 |
Time@Peak Reflow Temperature-Max (s) |
20 |
Continuous Drain Current (ID) |
-11.4A |
Threshold Voltage |
-400mV |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Nominal Vgs |
-400 mV |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Vishay Siliconix SI4435FDY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
14 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Current - Continuous Drain (Id) @ 25℃ |
12.6A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
4.8W Tc |
Turn Off Delay Time |
23 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2018 |
Series |
TrenchFET® Gen III |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Number of Channels |
1 |
Power Dissipation |
2.2W |
Turn On Delay Time |
9 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
19m Ω @ 9A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
-8.6A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.75mm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4438DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.5W Ta 7.8W Tc |
Turn Off Delay Time |
47 ns |
Peak Reflow Temperature (Cel) |
260 |
Mount |
Surface Mount |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
40 |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
17 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.7m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4645pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
126nC @ 10V |
Rise Time |
86ns |
Pin Count |
8 |
Number of Channels |
1 |
Fall Time (Typ) |
10 ns |
Continuous Drain Current (ID) |
36A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
24A |
Drain-source On Resistance-Max |
0.0027Ohm |
Pulsed Drain Current-Max (IDM) |
70A |
DS Breakdown Voltage-Min |
30V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4442DY-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Position |
DUAL |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
506.605978mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
15A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
Number of Elements |
1 |
Turn Off Delay Time |
125 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
1.6W Ta |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
PURE MATTE TIN |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
Rise Time |
11ns |
Vgs (Max) |
±12V |
Pin Count |
8 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
17 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
4.5m Ω @ 22A, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
Peak Reflow Temperature (Cel) |
260 |
Terminal Form |
GULL WING |
Fall Time (Typ) |
47 ns |
Continuous Drain Current (ID) |
15A |
Gate to Source Voltage (Vgs) |
12V |
Drain-source On Resistance-Max |
0.0045Ohm |
Drain to Source Breakdown Voltage |
30V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
Time@Peak Reflow Temperature-Max (s) |
30 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4448DY-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
186.993455mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.5W Ta 7.8W Tc |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Terminal Position |
DUAL |
Turn Off Delay Time |
240 ns |
Peak Reflow Temperature (Cel) |
260 |
Input Capacitance (Ciss) (Max) @ Vds |
12350pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs |
150nC @ 4.5V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
3.5W |
Turn On Delay Time |
38 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1.7m Ω @ 20A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
8 |
Rise Time |
22ns |
Vgs (Max) |
±8V |
Fall Time (Typ) |
33 ns |
Continuous Drain Current (ID) |
32A |
Gate to Source Voltage (Vgs) |
8V |
Drain to Source Breakdown Voltage |
12V |
Height |
1.55mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |