Showing 14677–14688 of 15245 results
Vishay Siliconix SI4455DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
5.9W Tc |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Weight |
186.993455mg |
| Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
150V |
| Element Configuration |
Single |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
295mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
95ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
34 ns |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
2A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-150V |
| Input Capacitance |
1.19nF |
| Drain to Source Resistance |
295mOhm |
| Rds On Max |
295 mΩ |
| Radiation Hardening |
No |
| Power Dissipation |
3.1W |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4456DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Finish |
Matte Tin (Sn) |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
3.5W Ta 7.8W Tc |
| Terminal Position |
DUAL |
| Input Capacitance (Ciss) (Max) @ Vds |
5670pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
122nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
8 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.5W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 250μA |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
3.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
23A |
| Pulsed Drain Current-Max (IDM) |
70A |
| DS Breakdown Voltage-Min |
40V |
| Nominal Vgs |
2.8 V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4459ADY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.5W Ta 7.8W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
80 ns |
| Published |
2015 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
5MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.5W |
| Turn On Delay Time |
16 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
195nC @ 10V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
30V |
| Number of Channels |
1 |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
-29A |
| Threshold Voltage |
-2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Nominal Vgs |
-2.5 V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SI4464DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
15 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
240mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
12ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
1.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Nominal Vgs |
2 V |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
8 |
| Lead Free |
Lead Free |
Vishay Siliconix SI4464DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Terminal Position |
DUAL |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
240mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
15 ns |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
12ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
1.7A |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
200V |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4477DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
3W Ta 6.6W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
8 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
-26.6A |
| Turn On Delay Time |
42 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.2m Ω @ 18A, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Rise Time |
42ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Channels |
1 |
| Threshold Voltage |
-1.5V |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.0062Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3W |
| Lead Free |
Lead Free |
Vishay Siliconix SI4483EDY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
42 μs |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
8.5mOhm |
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Pin Count |
8 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Turn On Delay Time |
10 μs |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 14A, 10V |
| Rise Time |
20μs |
| Vgs (Max) |
±25V |
| Terminal Form |
GULL WING |
| Fall Time (Typ) |
20 μs |
| Continuous Drain Current (ID) |
-14A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Vishay Siliconix SI4485DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.4W Ta 5W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
42mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
18 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.4W |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 5.9A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
590pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
10ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
5.9A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Nominal Vgs |
-1.2 V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4488DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.56W Ta |
| Turn Off Delay Time |
22 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
50mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.56W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
7ns |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
5A |
| Peak Reflow Temperature (Cel) |
260 |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Nominal Vgs |
2 V |
| Height |
1.5494mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
8 |
| Lead Free |
Lead Free |
Vishay Siliconix SI4491EDY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
3.1W Ta 6.9W Tc |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
153nC @ 10V |
| Terminal Form |
GULL WING |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4620pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Terminal Position |
DUAL |
| Continuous Drain Current (ID) |
17.3A |
| JEDEC-95 Code |
MS-012AA |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.0065Ohm |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4620DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta 7.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Turn Off Delay Time |
21 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| Series |
LITTLE FOOT® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1040pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Rise Time |
36ns |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
7.4A |
| Pin Count |
8 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.035Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
40A |
| FET Feature |
Schottky Diode (Isolated) |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4621DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Turn Off Delay Time |
20 ns |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Published |
2017 |
| Series |
LITTLE FOOT® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
60ns |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
54m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
6.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.094Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Pulsed Drain Current-Max (IDM) |
25A |
| FET Feature |
Schottky Diode (Isolated) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |