Manufacturer	Vishay Siliconix
Peak Reflow Temperature (Cel)	260
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	30A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Turn Off Delay Time	45 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation (Max)	3W Ta 6W Tc
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Contact Plating	Tin
Factory Lead Time	14 Weeks
Rise Time	21ns
Drain to Source Voltage (Vdss)	30V
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Turn On Delay Time	44 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	125nC @ 10V
Pin Count	8
Time@Peak Reflow Temperature-Max (s)	40

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	40A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	3.5W Ta 7.8W Tc
Terminal Position	DUAL
Turn Off Delay Time	58 ns
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Mount	Surface Mount
Factory Lead Time	21 Weeks
Gate Charge (Qg) (Max) @ Vgs	161nC @ 10V
Peak Reflow Temperature (Cel)	260
Pin Count	8
Qualification Status	Not Qualified
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11175pF @ 15V
Rise Time	69ns
Vgs (Max)	±16V
Terminal Form	FLAT
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	27A

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	24.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	2.5W Ta 5.7W Tc
Terminal Form	GULL WING
Factory Lead Time	14 Weeks
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	5.2mOhm
Terminal Finish	MATTE TIN
Terminal Position	DUAL
Turn Off Delay Time	33 ns
Peak Reflow Temperature (Cel)	260
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	10ns
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3150pF @ 15V
Time@Peak Reflow Temperature-Max (s)	40

Manufacturer	Vishay Siliconix
Packaging	Tape & Reel (TR)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	17A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Power Dissipation (Max)	2.5W Ta 4.4W Tc
Turn Off Delay Time	43 ns
Terminal Finish	PURE MATTE TIN
Mount	Surface Mount
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	8.5mOhm
Operating Temperature	-55°C~150°C TJ
Terminal Position	DUAL
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2635pF @ 15V
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	8
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation	2.5W
Turn On Delay Time	32 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 10A, 10V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	87ns
Vgs (Max)	±16V
Fall Time (Typ)	19 ns
Continuous Drain Current (ID)	17A

Discrete Semiconductors