Manufacturer	Vishay Siliconix
Number of Channels	1
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	186.993455mg
Current - Continuous Drain (Id) @ 25℃	8.9A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Turn Off Delay Time	33 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation (Max)	1.4W Ta
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Mounting Type	Surface Mount
Mount	Surface Mount
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	12A
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1580pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±20V
Turn On Delay Time	13 ns
Element Configuration	Single
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.58nF
Drain to Source Resistance	11mOhm
Rds On Max	11 mΩ
Height	1.55mm
Length	5mm
Width	4mm
FET Type	N-Channel
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	540.001716mg
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Current - Continuous Drain (Id) @ 25℃	11.9A Tc
Power Dissipation (Max)	4.1W Tc
Turn Off Delay Time	11 ns
Operating Temperature	-55°C~150°C TA
Packaging	Tape & Reel (TR)
Series	SkyFET®, TrenchFET®
Part Status	Obsolete
Mount	Surface Mount
Factory Lead Time	27 Weeks
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V
Rise Time	11ns
Power Dissipation	2.5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	521pF @ 15V
Min Operating Temperature	-55°C
Max Operating Temperature	150°C
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Continuous Drain Current (ID)	11.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Resistance	13mOhm
Number of Channels	1
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Terminal Position	DUAL
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Turn Off Delay Time	20 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation (Max)	2.4W Ta 5W Tc
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Mount	Surface Mount
Factory Lead Time	15 Weeks
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 13V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Pin Count	8
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Peak Reflow Temperature (Cel)	260
Terminal Form	GULL WING
Rise Time	50ns
Vgs (Max)	±16V
Fall Time (Typ)	10 ns

Manufacturer	Vishay Siliconix
ECCN Code	EAR99
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	6.5A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Power Dissipation (Max)	1.3W Ta
Operating Temperature	-55°C~150°C TJ
Number of Elements	1
Packaging	Tape & Reel (TR)
Published	2004
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Mounting Type	Surface Mount
Factory Lead Time	14 Weeks
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18.5m Ω @ 9A, 10V
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Terminal Position	DUAL
Terminal Finish	MATTE TIN
Vgs(th) (Max) @ Id	1.8V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 5V
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±25V
Continuous Drain Current (ID)	9A
Drain Current-Max (Abs) (ID)	6.5A
DS Breakdown Voltage-Min	30V
Terminal Form	GULL WING
RoHS Status	ROHS3 Compliant

Discrete Semiconductors