Showing 14713–14724 of 15245 results
Vishay Siliconix SI4838BDY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 5.7W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
56 ns |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
2.7mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
8 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Continuous Drain Current (ID) |
22.5A |
| Threshold Voltage |
400mV |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.7m Ω @ 15A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5760pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 4.5V |
| Rise Time |
92ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
19 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
400 mV |
| Height |
1.75mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2.5W |
| Lead Free |
Lead Free |
Vishay Siliconix SI4838DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
3mOhm |
| Turn Off Delay Time |
140 ns |
| Terminal Position |
DUAL |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
70 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Turn On Delay Time |
40 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 25A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 4.5V |
| Rise Time |
40ns |
| Terminal Form |
GULL WING |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Nominal Vgs |
600 mV |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4840BDY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
2.5W Ta 6W Tc |
| Part Status |
Active |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Voltage |
40V |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Current |
19A |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 12.4A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C |
19A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
15ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Fall Time (Typ) |
10 ns |
| Turn-Off Delay Time |
30 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
19A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.75mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SI4842BDY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 6.25W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
38 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Pin Count |
8 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
125 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3650pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Rise Time |
190ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
28A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain-source On Resistance-Max |
0.0042Ohm |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI4848DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
85mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
24 ns |
| Reach Compliance Code |
unknown |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
10ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
3.7A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.7A |
| Drain to Source Breakdown Voltage |
150V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.75mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4862DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
120 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
32 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Power Dissipation (Max) |
1.6W Ta |
| Terminal Finish |
Matte Tin (Sn) |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 25A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA (Min) |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
8 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
42 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 4.5V |
| Rise Time |
38ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Drain to Source Breakdown Voltage |
16V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4866BDY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
4.45W Tc |
| Turn Off Delay Time |
57 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
15 Weeks |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
5.3MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
9 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.3m Ω @ 12A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5020pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 4.5V |
| Rise Time |
12ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
16.1A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.75mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4866DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Terminal Position |
DUAL |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
5.5mOhm |
| Terminal Finish |
MATTE TIN |
| Turn Off Delay Time |
82 ns |
| Terminal Form |
GULL WING |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
35 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 17A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 4.5V |
| Rise Time |
32ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Nominal Vgs |
600 mV |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4874BDY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
186.993455mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
7mOhm |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
57 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3230pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 4.5V |
| Rise Time |
10ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
8 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
16A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI4880DY-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Transistor Element Material |
SILICON |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
46 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
9ns |
| Element Configuration |
Single |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 5V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
30 ns |
| JESD-30 Code |
R-PDSO-G8 |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.0085Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI4884BDY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 4.45W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
22 ns |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
9mOhm |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
11ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1525pF @ 15V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
16.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
8 |
| Lead Free |
Lead Free |
Vishay Siliconix SI4886DY-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.56W Ta |
| Turn Off Delay Time |
42 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.56W |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
800mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 5V |
| Rise Time |
5ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9.5A |
| DS Breakdown Voltage-Min |
30V |
| Nominal Vgs |
800 mV |
| Height |
1.55mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |