Manufacturer	Vishay Siliconix
Packaging	Tape & Reel (TR)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	2.5W Ta
Turn Off Delay Time	35 ns
Peak Reflow Temperature (Cel)	260
Factory Lead Time	14 Weeks
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Terminal Position	DUAL
Terminal Form	GULL WING
Operating Temperature	-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s)	30
Vgs (Max)	±25V
Fall Time (Typ)	17 ns
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	8.5ns
Pin Count	8

Manufacturer	Vishay Siliconix
Turn Off Delay Time	24 ns
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Current - Continuous Drain (Id) @ 25℃	8.8A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Element Configuration	Single
Mount	Surface Mount
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	12mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Power Dissipation (Max)	1.6W Ta
Power Dissipation	1.6W
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	12mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn On Delay Time	10 ns
FET Type	N-Channel
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	12mOhm
Rds On Max	12 mΩ
Height	1.5494mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Terminal Finish	MATTE TIN
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8.8A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	1.6W Ta
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Turn Off Delay Time	24 ns
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Mounting Type	Surface Mount
Mount	Surface Mount
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 5V
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	8
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12m Ω @ 12.4A, 10V
Terminal Form	GULL WING
Terminal Position	DUAL
Rise Time	11ns
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.012Ohm

Manufacturer	Vishay Siliconix
Terminal Form	GULL WING
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8.9A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	1.4W Ta
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Turn Off Delay Time	33 ns
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Terminal Position	DUAL
Mount	Surface Mount
Factory Lead Time	14 Weeks
Rise Time	10ns
Vgs (Max)	±20V
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1580pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Time@Peak Reflow Temperature-Max (s)	30
Peak Reflow Temperature (Cel)	260

Discrete Semiconductors