Showing 14737–14748 of 15245 results
Vishay Siliconix SI5443DC-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
21 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Power Dissipation (Max) |
1.3W Ta |
| Resistance |
65mOhm |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.3W |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C8 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
3.6A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5445BDC-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Turn Off Delay Time |
75 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
33mOhm |
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
22ns |
| Vgs (Max) |
±8V |
| Pin Count |
8 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.3W |
| Turn On Delay Time |
12 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 4.5V |
| Peak Reflow Temperature (Cel) |
260 |
| Terminal Form |
C BEND |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
5.2A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
-8V |
| Height |
1.0922mm |
| Length |
3.0988mm |
| Width |
1.7018mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Vishay Siliconix SI5447DC-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Supplier Device Package |
1206-8 ChipFET™ |
| Weight |
84.99187mg |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Turn Off Delay Time |
44 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
1.3W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
-48A |
| Gate to Source Voltage (Vgs) |
8V |
| Rds On (Max) @ Id, Vgs |
76mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id |
450mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
| Rise Time |
17ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
17 ns |
| Turn On Delay Time |
14 ns |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
-20V |
| Drain to Source Resistance |
76mOhm |
| Rds On Max |
76 mΩ |
| Height |
1.1mm |
| Length |
3.05mm |
| Width |
1.65mm |
| Radiation Hardening |
No |
| FET Type |
P-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5449DC-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
35 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Supplier Device Package |
1206-8 ChipFET™ |
| Weight |
84.99187mg |
| Current - Continuous Drain (Id) @ 25℃ |
3.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
1.3W Ta |
| Number of Channels |
1 |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
14 ns |
| Turn On Delay Time |
13 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
85mOhm @ 3.1A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V |
| Rise Time |
14ns |
| Drain to Source Voltage (Vdss) |
30V |
| Element Configuration |
Single |
| Power Dissipation |
1.3W |
| Continuous Drain Current (ID) |
-4.3A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Resistance |
85mOhm |
| Rds On Max |
85 mΩ |
| Height |
1.1mm |
| Length |
3.05mm |
| Width |
1.65mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5468DC-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Weight |
84.99187mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.3W Ta 5.7W Tc |
| Turn Off Delay Time |
15 ns |
| Terminal Form |
C BEND |
| Factory Lead Time |
14 Weeks |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
28MOhm |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
30V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.3W |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 6.8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
435pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
8 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6A |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.1mm |
| Length |
3.05mm |
| Width |
1.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI5471DC-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Weight |
84.99187mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 6.3W Tc |
| Turn Off Delay Time |
78 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2014 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
20mOhm |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
8ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
9 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 9.1A, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2945pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
-6A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain to Source Breakdown Voltage |
-20V |
| Height |
1.1mm |
| Length |
3.05mm |
| Width |
1.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Vishay Siliconix SI5475BDC-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 6.3W Tc |
| Terminal Finish |
MATTE TIN |
| Turn Off Delay Time |
65 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Terminal Form |
C BEND |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 5.6A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 8V |
| Terminal Position |
DUAL |
| Rise Time |
15ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
72 ns |
| Continuous Drain Current (ID) |
7.7A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Radiation Hardening |
No |
| Peak Reflow Temperature (Cel) |
260 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5475DC-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
122 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Supplier Device Package |
1206-8 ChipFET™ |
| Weight |
84.99187mg |
| Current - Continuous Drain (Id) @ 25℃ |
5.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
31mOhm |
| Power Dissipation (Max) |
1.3W Ta |
| Min Operating Temperature |
-55°C |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
80 ns |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
31mOhm @ 5.5A, 4.5V |
| Vgs(th) (Max) @ Id |
450mV @ 1mA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
12V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
5.5A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Resistance |
31mOhm |
| Rds On Max |
31 mΩ |
| Height |
1.1mm |
| Length |
3.05mm |
| Width |
1.65mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5476DU-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-XDSO-N3 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 31W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2015 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
12A |
| Power Dissipation |
3.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
34m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.034Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
25A |
| Height |
750μm |
| Length |
3mm |
| Width |
1.9mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SI5480DU-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2017 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® ChipFET™ Single |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 31W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Input Capacitance (Ciss) (Max) @ Vds |
1230pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 7.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| JESD-30 Code |
R-XDSO-C3 |
| Qualification Status |
Not Qualified |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Height |
750μm |
| Length |
3mm |
| Width |
1.9mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5480DU-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
PowerPAK® ChipFET™ Single |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 31W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
16mOhm |
| Terminal Finish |
PURE MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 7.2A, 10V |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-N4 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
260 |
| Terminal Form |
NO LEAD |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1230pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI5482DU-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® ChipFET™ Single |
| Supplier Device Package |
PowerPAK® ChipFet Single |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.1W Ta 31W Tc |
| Turn Off Delay Time |
35 ns |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Published |
2017 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Turn On Delay Time |
5 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
12V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1610pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 7.4A, 10V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.61nF |
| Drain to Source Resistance |
15mOhm |
| Rds On Max |
15 mΩ |
| Height |
750μm |
| Length |
3mm |
| Width |
1.9mm |
| RoHS Status |
ROHS3 Compliant |