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Discrete Semiconductors
Global Power GSID100A120T2C1
In stock
Manufacturer |
Global Power |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Operating Temperature |
-40°C ~ 150°C |
Series |
Amp+™ |
Part Status |
Active |
Configuration |
Three Phase Inverter |
Power - Max |
640W |
Input |
Three Phase Bridge Rectifier |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
200A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
IGBT Type |
— |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
13.7nF @ 25V |
Global Power GSID100A120T2P2
In stock
Manufacturer |
Global Power |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Operating Temperature |
-40°C ~ 150°C |
Series |
Amp+™ |
Part Status |
Active |
Configuration |
Three Phase Inverter |
Power - Max |
710W |
Input |
Three Phase Bridge Rectifier |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
200A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
IGBT Type |
— |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
13.7nF @ 25V |
Global Power GSID150A120S6A4
In stock
Manufacturer |
Global Power |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Operating Temperature |
-40°C ~ 150°C |
Series |
Amp+™ |
Part Status |
Active |
Configuration |
Single |
Power - Max |
1035W |
Input |
Standard |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
275A |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
IGBT Type |
— |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
20.2nF @ 25V |
Global Power GSID150A120T2C1
In stock
Manufacturer |
Global Power |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Operating Temperature |
-40°C ~ 150°C |
Series |
Amp+™ |
Part Status |
Active |
Configuration |
Three Phase Inverter |
Power - Max |
1087W |
Input |
Three Phase Bridge Rectifier |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
285A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 150A |
IGBT Type |
— |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
21.2nF @ 25V |
Global Power GSID200A170S3B1
In stock
Manufacturer |
Global Power |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
D-3 Module |
Supplier Device Package |
D3 |
Operating Temperature |
-40°C ~ 150°C |
Series |
Amp+™ |
Part Status |
Active |
Configuration |
2 Independent |
Power - Max |
1630W |
Input |
Standard |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
400A |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 200A |
IGBT Type |
— |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
26nF @ 25V |
Global Power GSID600A120S4B1
In stock
Manufacturer |
Global Power |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Operating Temperature |
-40°C ~ 150°C |
Series |
Amp+™ |
Part Status |
Active |
Configuration |
Half Bridge |
Power - Max |
3060W |
Input |
Standard |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
1130A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 600A |
IGBT Type |
— |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
51nF @ 25V |
GOFORD 18N20J
In stock
Manufacturer |
GOFORD |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Supplier Device Package |
TO-251 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Goford Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
65.8W (Tc) |
Product Status |
Active |
Mounting Type |
Through Hole |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
160mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
836 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
18A (Tj) |
Gate Charge (Qg) (Max) @ Vgs |
17.7 nC @ 10 V |
Drain to Source Voltage (Vdss) |
200 V |
Vgs (Max) |
±30V |
GOFORD G110N06T
In stock
Manufacturer |
GOFORD |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220 |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
Goford Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
120W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
5538 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
113 nC @ 10 V |
Drain to Source Voltage (Vdss) |
60 V |
Vgs (Max) |
±20V |
GOFORD G200P04D3
In stock
Manufacturer |
GOFORD |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Supplier Device Package |
8-DFN (3.15×3.05) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
Goford Semiconductor |
Package |
Tape & Reel (TR) |
Power Dissipation (Max) |
30W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
75mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2662 pF @ 20 V |
Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
54 nC @ 10 V |
Drain to Source Voltage (Vdss) |
40 V |
Vgs (Max) |
±20V |
GOFORD G20P06K
In stock
Manufacturer |
GOFORD |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Goford Semiconductor |
Power Dissipation (Max) |
90W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
45mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
3430 pF @ 30 V |
Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
46 nC @ 10 V |
Drain to Source Voltage (Vdss) |
60 V |
Vgs (Max) |
±20V |
GOFORD G2K3N10H
In stock
Manufacturer |
GOFORD |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
TO-261-4, TO-261AA |
Supplier Device Package |
SOT-223 |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
Goford Semiconductor |
Power Dissipation (Max) |
2.4W (Tc) |
Product Status |
Active |
Mounting Type |
Surface Mount |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
220mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
434 pF @ 50 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
13 nC @ 10 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |