Manufacturer	Vishay Siliconix
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25℃	6A Tc
Drive Voltage (Max Rds On, Min Rds On)	1.5V 4.5V
Power Dissipation (Max)	2.5W Ta 6.2W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Element Configuration	Single
Power Dissipation	2.5W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs	35nC @ 8V
Drain to Source Voltage (Vdss)	8V
Vgs (Max)	±5V
Continuous Drain Current (ID)	-6A
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	8V
Input Capacitance	1.29nF
Drain to Source Resistance	36mOhm
Rds On Max	36 mΩ
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Turn Off Delay Time	30 ns
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25℃	2.7A Ta
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Min Operating Temperature	-55°C
Mount	Surface Mount
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Power Dissipation (Max)	1.1W Ta
Power Dissipation	1.1W
Continuous Drain Current (ID)	-3.6A
Gate to Source Voltage (Vgs)	8V
Rds On (Max) @ Id, Vgs	110mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	±8V
Fall Time (Typ)	30 ns
Turn On Delay Time	12 ns
FET Type	P-Channel
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	110mOhm
Rds On Max	110 mΩ
Nominal Vgs	-1 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Packaging	Tape & Reel (TR)
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Supplier Device Package	PowerPAK® ChipFet Dual
Current - Continuous Drain (Id) @ 25℃	6A Tc
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Power Dissipation (Max)	2.3W Ta 8.3W Tc
Turn Off Delay Time	40 ns
Turn On Delay Time	20 ns
Mount	Surface Mount
Published	2017
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	1
Operating Temperature	-55°C~150°C TJ
FET Type	N-Channel
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Rise Time	65ns
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	6A
Rds On (Max) @ Id, Vgs	39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance	520pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	39mOhm
Rds On Max	39 mΩ
Height	750μm
Length	3mm
Width	1.9mm
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Series	LITTLE FOOT®
Package / Case	PowerPAK® ChipFET™ Dual
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	6A Tc
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Power Dissipation (Max)	2.3W Ta 8.3W Tc
Turn Off Delay Time	40 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-30 Code	R-XDSO-C6
Published	2013
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	8
Mounting Type	Surface Mount
Mount	Surface Mount
Drain to Source Voltage (Vdss)	20V
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Rise Time	65ns
Vgs (Max)	±8V

Discrete Semiconductors