Showing 14761–14772 of 15245 results
Vishay Siliconix SI6473DQ-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
220 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-TSSOP |
| Weight |
157.991892mg |
| Current - Continuous Drain (Id) @ 25℃ |
6.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
1.08W Ta |
| Number of Channels |
1 |
| Fall Time (Typ) |
95 ns |
| Continuous Drain Current (ID) |
6.2A |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
12.5mOhm @ 9.5A, 4.5V |
| Vgs(th) (Max) @ Id |
450mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 5V |
| Rise Time |
33ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Element Configuration |
Single |
| Turn On Delay Time |
42 ns |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
-20V |
| Drain to Source Resistance |
12.5mOhm |
| Rds On Max |
12.5 mΩ |
| Height |
1mm |
| Length |
3mm |
| Width |
4.4mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7101DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| Packaging |
Cut Tape (CT) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
S-PDSO-C5 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
-16.9A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.2m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3595pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
102nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Channels |
1 |
| Threshold Voltage |
-1.2V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.0072Ohm |
| Drain to Source Breakdown Voltage |
-30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3.7W |
| Lead Free |
Lead Free |
Vishay Siliconix SI7102DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
53 ns |
| Operating Temperature |
-50°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
2014 |
| JESD-30 Code |
S-XDSO-C5 |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±8V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
52mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 15A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3720pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 8V |
| Rise Time |
125ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
25A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
35A |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7104DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2015 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Rise Time |
11ns |
| Vgs (Max) |
±12V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 26.1A, 4.5V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| JESD-30 Code |
S-XDSO-C5 |
| Number of Channels |
1 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
26.1A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.0037Ohm |
| Drain to Source Breakdown Voltage |
12V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7106DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
6.2mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±12V |
| JESD-30 Code |
S-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.2m Ω @ 19.5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 4.5V |
| Rise Time |
15ns |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
19.5A |
| Pin Count |
8 |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
20V |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Height |
1.04mm |
| Length |
3.3mm |
| Width |
3.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7110DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
4.9mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.3m Ω @ 21.1A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 4.5V |
| Rise Time |
10ns |
| JESD-30 Code |
S-XDSO-C5 |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
20A |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7112DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2012 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-50°C~150°C TJ |
| JESD-30 Code |
S-XDSO-C5 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
8 |
| Packaging |
Tape & Reel (TR) |
| Number of Channels |
1 |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
10 ns |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 17.8A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2610pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 4.5V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
30V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
11.3A |
| Threshold Voltage |
600mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7114DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
45 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| JESD-30 Code |
S-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 18.3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
18.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
1V |
| Avalanche Energy Rating (Eas) |
42 mJ |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7120DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
6.3A Ta |
| Number of Elements |
1 |
| Turn Off Delay Time |
50 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2011 |
| Series |
TrenchFET® |
| Terminal Form |
C BEND |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
19mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
1.5W |
| Terminal Position |
DUAL |
| JESD-609 Code |
e3 |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| JESD-30 Code |
S-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 10A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Rise Time |
12ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6.3A |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
24 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7121DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2012 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Turn Off Delay Time |
28 ns |
| Operating Temperature |
-50°C~150°C TJ |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
18mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
S-XDSO-C5 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
-16A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.7W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
44 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1960pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
100ns |
| Vgs (Max) |
±25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Dual Supply Voltage |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Nominal Vgs |
-3 V |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7136DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 39W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| JESD-30 Code |
R-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3380pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
78nC @ 10V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
30A |
| Pin Count |
8 |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
29.5A |
| Drain-source On Resistance-Max |
0.0032Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Nominal Vgs |
1 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7138DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
5.4W Ta 96W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE MATTE TIN |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
30A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.8m Ω @ 19.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6900pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Power Dissipation |
5.4W |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Nominal Vgs |
2 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |