Showing 14773–14784 of 15245 results
Vishay Siliconix SI7139DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
S17-0173-Single |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 48W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
5.5mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Turn Off Delay Time |
56 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4230pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Continuous Drain Current (ID) |
-22.4A |
| Threshold Voltage |
-1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
40A |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.17mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7145DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
S17-0173-Single |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Turn Off Delay Time |
130 ns |
| Pin Count |
8 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
2.6mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.25W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
27 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
15660pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
413nC @ 10V |
| Rise Time |
110ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
43 ns |
| Continuous Drain Current (ID) |
-60A |
| JESD-30 Code |
R-XDSO-C5 |
| Threshold Voltage |
-2.3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
36.5A |
| Drain to Source Breakdown Voltage |
-30V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-2.3 V |
| Height |
1.17mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SI7148DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Pure Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
5.4W Ta 96W Tc |
| Terminal Form |
FLAT |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
28A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 35V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Channels |
1 |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Nominal Vgs |
2 V |
| Turn Off Time-Max (toff) |
90ns |
| Turn On Time-Max (ton) |
96ns |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7149DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-XDSO-C5 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
69W Tc |
| Turn Off Delay Time |
230 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
5.2MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
110 ns |
| Continuous Drain Current (ID) |
23.7A |
| Power Dissipation |
69W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
100 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4590pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
147nC @ 10V |
| Rise Time |
150ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Threshold Voltage |
-1.2V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain to Source Breakdown Voltage |
-20V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Height |
1.04mm |
| Length |
5.15mm |
| Width |
6.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SI7156DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
5.4W Ta 83W Tc |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Turn Off Delay Time |
56 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6900pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Rise Time |
32ns |
| Element Configuration |
Single |
| Power Dissipation |
5.4W |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
29A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
6.9nF |
| Drain to Source Resistance |
3.5mOhm |
| Rds On Max |
3.5 mΩ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7164DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Turn Off Delay Time |
40 ns |
| Pin Count |
8 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6.25mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.25W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.25m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2830pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
11ns |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
60A |
| JESD-30 Code |
R-XDSO-C5 |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
23.5A |
| Drain to Source Breakdown Voltage |
60V |
| Nominal Vgs |
2.5 V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7170DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 48W Tc |
| Turn Off Delay Time |
35 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
40A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4355pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| JESD-30 Code |
R-XDSO-C5 |
| Pin Count |
8 |
| Threshold Voltage |
2.6V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0034Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7172DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.4W Ta 96W Tc |
| Turn Off Delay Time |
26 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
14 Weeks |
| Published |
2017 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
70mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.4W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 5.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2250pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
77nC @ 10V |
| Rise Time |
11ns |
| JESD-30 Code |
R-XDSO-C5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
25A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5.9A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7174DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Turn Off Delay Time |
38 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Published |
2008 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
7mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.25W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2770pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
4.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Dual Supply Voltage |
75V |
| Nominal Vgs |
4.5 V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7196DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2005 |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 41.6W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PDSO-C5 |
| Packaging |
Tape & Reel (TR) |
| Series |
WFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Power Dissipation |
5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1577pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
12ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
60A |
| Number of Channels |
1 |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7302DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Form |
C BEND |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
20 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
645pF @ 15V |
| JESD-30 Code |
S-XDSO-C5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
320m Ω @ 2.3A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
220V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
2.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.32Ohm |
| Radiation Hardening |
No |
| Pin Count |
8 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7317DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 19.8W Tc |
| Turn Off Delay Time |
11 ns |
| Terminal Position |
DUAL |
| Factory Lead Time |
14 Weeks |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
1.2Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
C BEND |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
365pF @ 75V |
| JESD-30 Code |
S-PDSO-C5 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 500mA, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
9.8nC @ 10V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
2.8A |
| Gate to Source Voltage (Vgs) |
30V |
| Pulsed Drain Current-Max (IDM) |
2A |
| Avalanche Energy Rating (Eas) |
0.8 mJ |
| RoHS Status |
ROHS3 Compliant |