Showing 14785–14796 of 15245 results
Vishay Siliconix SI7322DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2008 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| JESD-30 Code |
S-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
58m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
750pF @ 50V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Pin Count |
8 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
5.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7328DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.78W Ta 52W Tc |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-50°C~150°C TJ |
| Published |
2005 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6.6mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
8 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.6m Ω @ 18.9A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2610pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
31.5nC @ 4.5V |
| Rise Time |
10ns |
| JESD-30 Code |
S-XDSO-C5 |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
35A |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1.04mm |
| Length |
3.3mm |
| Width |
3.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7344DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
1.8W Ta |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Series |
TrenchFET® |
| Published |
2008 |
| Packaging |
Tape & Reel (TR) |
| Operating Temperature |
-55°C~150°C TJ |
| Max Operating Temperature |
150°C |
| Turn Off Delay Time |
40 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Supplier Device Package |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Package / Case |
PowerPAK® SO-8 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Rds On Max |
8 mΩ |
| Drain to Source Resistance |
8mOhm |
| Drain to Source Breakdown Voltage |
20V |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
11A |
| Fall Time (Typ) |
15 ns |
| Drain to Source Voltage (Vdss) |
20V |
| Min Operating Temperature |
-55°C |
| Rise Time |
15ns |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Rds On (Max) @ Id, Vgs |
8mOhm @ 17A, 10V |
| FET Type |
N-Channel |
| Power Dissipation |
1.8W |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7356ADP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.4W Ta 83W Tc |
| Turn Off Delay Time |
95 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Voltage (Vdss) |
30V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.4W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6215pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
31 ns |
| JESD-30 Code |
R-XDSO-C5 |
| Continuous Drain Current (ID) |
31A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
40A |
| Drain-source On Resistance-Max |
0.004Ohm |
| Pulsed Drain Current-Max (IDM) |
70A |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SI7358ADP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
83 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 4.5V |
| Rise Time |
10ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4650pF @ 15V |
| JESD-30 Code |
R-PDSO-C5 |
| Pin Count |
8 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7358ADP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Package / Case |
PowerPAK® SO-8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Weight |
506.605978mg |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.9W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
83 ns |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
4.2mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
14A |
| Rds On (Max) @ Id, Vgs |
4.2mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4650pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 4.5V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
21 ns |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
4.65nF |
| Drain to Source Resistance |
4.2mOhm |
| Rds On Max |
4.2 mΩ |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7370DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2008 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
11MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
FAST SWITCHING |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Rise Time |
12ns |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Continuous Drain Current (ID) |
15.8A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9.6A |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Nominal Vgs |
4 V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7374DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
TrenchFET® |
| Published |
2016 |
| Packaging |
Tape & Reel (TR) |
| Operating Temperature |
-55°C~150°C TJ |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
5W Ta 56W Tc |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Weight |
506.605978mg |
| Supplier Device Package |
PowerPAK® SO-8 |
| Package / Case |
PowerPAK® SO-8 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Number of Channels |
1 |
| Fall Time (Typ) |
10 ns |
| Radiation Hardening |
No |
| Rds On Max |
5.5 mΩ |
| Drain to Source Resistance |
5.5mOhm |
| Input Capacitance |
5.5nF |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
23.8A |
| Vgs (Max) |
±20V |
| Min Operating Temperature |
-55°C |
| Drain to Source Voltage (Vdss) |
30V |
| Gate Charge (Qg) (Max) @ Vgs |
122nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 15V |
| Vgs(th) (Max) @ Id |
2.8V @ 250μA |
| Rds On (Max) @ Id, Vgs |
5.5mOhm @ 23.8A, 10V |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7380ADP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2015 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.4W Ta 83W Tc |
| Turn Off Delay Time |
155 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
3mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
35 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7785pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Rise Time |
13ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Nominal Vgs |
600 mV |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7380ADP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2012 |
| Package / Case |
PowerPAK® SO-8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.4W Ta 83W Tc |
| Turn Off Delay Time |
155 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
7785pF @ 15V |
| Pin Count |
8 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Rise Time |
13ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.0035Ohm |
| Pulsed Drain Current-Max (IDM) |
70A |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| JESD-30 Code |
R-XDSO-C8 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7386DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
35 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Weight |
506.605978mg |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
7mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation (Max) |
1.8W Ta |
| Element Configuration |
Single |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
19A |
| Power Dissipation |
1.8W |
| Turn On Delay Time |
12 ns |
| Drain to Source Breakdown Voltage |
30V |
| Drain to Source Resistance |
7mOhm |
| Rds On Max |
7 mΩ |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7403BDN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2015 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
3.1W Ta 9.6W Tc |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
430pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 8V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
74m Ω @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Pin Count |
8 |
| JESD-30 Code |
S-XDSO-C5 |
| Rise Time |
51ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
5.1A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.074Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |