Showing 14797–14808 of 15245 results
Vishay Siliconix SI7411DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
135 ns |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Published |
2015 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
19MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
C BEND |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 11.4A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 300μA |
| Pin Count |
8 |
| JESD-30 Code |
S-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
23 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 4.5V |
| Rise Time |
45ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
7.5A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7415DN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
65mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Published |
2008 |
| JESD-30 Code |
S-XDSO-C5 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
60V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
-3.6A |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7425DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Form |
C BEND |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
130 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
1V @ 300μA |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 4.5V |
| JESD-30 Code |
S-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 12.6A, 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
55ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
8.3A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.016Ohm |
| Drain to Source Breakdown Voltage |
12V |
| Pulsed Drain Current-Max (IDM) |
25A |
| Radiation Hardening |
No |
| Pin Count |
8 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7431DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
174mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
2007 |
| JESD-30 Code |
R-XDSO-C5 |
| Continuous Drain Current (ID) |
-3.8A |
| Threshold Voltage |
-4V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.4W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
23 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
174m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Rise Time |
49ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
49 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.2A |
| Drain to Source Breakdown Voltage |
-200V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-4 V |
| Height |
1.12mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7439DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Resistance |
90mOhm |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.9W Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Turn-Off Delay Time |
115 ns |
| Continuous Drain Current (ID) |
-5.2A |
| Turn On Delay Time |
25 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 5.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C |
3A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Rise Time |
46ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Power Dissipation |
1.9W |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
-4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
-150V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Vishay Siliconix SI7439DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
115 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
90mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
46 ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 5.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Rise Time |
46ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
-5.2A |
| Threshold Voltage |
-4V |
| JESD-30 Code |
R-XDSO-C5 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
-150V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-4 V |
| Height |
1.12mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SI7440DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
75 ns |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6.5mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
C BEND |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 4.5V |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7445DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
400 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Supplier Device Package |
PowerPAK® 1212-8 |
| Weight |
506.605978mg |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation (Max) |
1.9W Ta |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
-19A |
| Threshold Voltage |
-1V |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
7.7mOhm @ 19A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 5V |
| Rise Time |
45ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
45 ns |
| Power Dissipation |
1.9W |
| Turn On Delay Time |
40 ns |
| Gate to Source Voltage (Vgs) |
8V |
| Dual Supply Voltage |
-20V |
| Drain to Source Resistance |
7.7mOhm |
| Rds On Max |
7.7 mΩ |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.0038mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7454DDP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
4.1W Ta 29.7W Tc |
| Turn Off Delay Time |
16 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
33MOhm |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
2014 |
| JESD-30 Code |
R-PDSO-C5 |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
21A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
29.7W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19.5nC @ 10V |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
7.2 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Length |
6.25mm |
| Width |
5.26mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7456DDP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
27.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 35.7W Tc |
| Turn Off Delay Time |
19 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2014 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
42MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| JESD-30 Code |
R-PDSO-C5 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
10 ns |
| Power Dissipation |
5W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
29.5nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
27.8A |
| Threshold Voltage |
1.5V |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Height |
1.12mm |
| Length |
6.25mm |
| Width |
5.26mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Vishay Siliconix SI7456DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
46 ns |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
25mOhm |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PDSO-F5 |
| Continuous Drain Current (ID) |
5.7A |
| Threshold Voltage |
2V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 9.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Nominal Vgs |
2 V |
| Turn On Time-Max (ton) |
60ns |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7456DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Turn Off Delay Time |
46 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
25MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PDSO-F5 |
| Continuous Drain Current (ID) |
5.7A |
| Threshold Voltage |
2V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 9.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Nominal Vgs |
4 V |
| Turn On Time-Max (ton) |
60ns |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |