Showing 14809–14820 of 15245 results
Vishay Siliconix SI7457DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 83.3W Tc |
| Turn Off Delay Time |
105 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
100V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 7.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5230pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| JESD-30 Code |
R-XDSO-C5 |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
7.9A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
35A |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7462DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
2.6A Ta |
| Number of Elements |
1 |
| Turn Off Delay Time |
40 ns |
| Packaging |
Cut Tape (CT) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
130mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
1.9W |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Pbfree Code |
yes |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
15ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 4.1A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
4.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.6A |
| Drain to Source Breakdown Voltage |
200V |
| Height |
1.0668mm |
| Length |
5.969mm |
| Width |
5.0038mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SI7464DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Terminal Form |
FLAT |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Pure Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
15 ns |
| Pin Count |
8 |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 2.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Channels |
1 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
1.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.24Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Avalanche Energy Rating (Eas) |
0.45 mJ |
| Turn Off Time-Max (toff) |
50ns |
| Turn On Time-Max (ton) |
35ns |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7476DP-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Weight |
506.605978mg |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.9W Ta |
| Number of Channels |
1 |
| Turn Off Delay Time |
130 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
5.3mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
25A |
| Turn On Delay Time |
30 ns |
| Rds On (Max) @ Id, Vgs |
5.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
177nC @ 10V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Resistance |
5.3mOhm |
| Element Configuration |
Single |
| Rds On Max |
5.3 mΩ |
| Nominal Vgs |
1 V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Vishay Siliconix SI7495DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
PowerPAK® SO-8 |
| Weight |
506.605978mg |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
1.8W Ta |
| Turn Off Delay Time |
350 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
6.5mOhm |
| Terminal Finish |
PURE MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Voltage (Vdss) |
12V |
| Number of Channels |
1 |
| Turn On Delay Time |
100 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 21A, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 5V |
| Rise Time |
200ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
230 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
-12V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7615DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
3.9MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
38ns |
| Drain to Source Voltage (Vdss) |
20V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.7W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
183nC @ 10V |
| JESD-30 Code |
S-XDSO-C5 |
| Pin Count |
8 |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
-35A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
22.6A |
| Drain to Source Breakdown Voltage |
-20V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Length |
3.3mm |
| Width |
3.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Vishay Siliconix SI7625DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
7MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
126nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.7W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4427pF @ 15V |
| Pin Count |
8 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
17.3A |
| Threshold Voltage |
-1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
35A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-XDSO-C5 |
| Lead Free |
Lead Free |
Vishay Siliconix SI7633DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Turn Off Delay Time |
100 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Pin Count |
8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.25W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
100 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9500pF @ 10V |
| Rise Time |
90ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
34A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
60A |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Height |
1.04mm |
| Length |
4.9mm |
| Width |
5.89mm |
| Radiation Hardening |
No |
| JESD-30 Code |
R-XDSO-C5 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7674DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
5.4W Ta 83W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
3.3mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
5.4W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5910pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
5.91nF |
| Drain to Source Resistance |
3.3mOhm |
| Rds On Max |
3.3 mΩ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7682DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2016 |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 27.5W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
C BEND |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
R-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 20A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1595pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
17.5A |
| Drain-source On Resistance-Max |
0.009Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Radiation Hardening |
No |
| Pin Count |
8 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7703EDN-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Terminal Position |
DUAL |
| Factory Lead Time |
49 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Turn Off Delay Time |
23 ns |
| Terminal Form |
C BEND |
| Vgs(th) (Max) @ Id |
1V @ 800μA |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| Pin Count |
8 |
| JESD-30 Code |
S-XDSO-C6 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
48m Ω @ 6.3A, 4.5V |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Rise Time |
6ns |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
-6.3A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
4.3A |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
20A |
| FET Feature |
Schottky Diode (Isolated) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SI7726DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-50°C~150°C TJ |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| Series |
SkyFET®, TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
S-XDSO-C5 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1765pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
10ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
35A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Nominal Vgs |
2.6 V |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |