Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25℃	10.3A Ta 12A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Power Dissipation (Max)	3.6W Ta 35.7W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Part Status	Active
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Drain to Source Resistance	16mOhm
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Manufacturer Package Identifier	S17-0173_SINGLE
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
JESD-609 Code	e3
Operating Mode	ENHANCEMENT MODE
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	22mOhm
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	14 Weeks
Continuous Drain Current (ID)	6.2A
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	6.2A Ta
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	40A Tc
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Power Dissipation (Max)	5W Ta 48W Tc
Terminal Form	C BEND
Factory Lead Time	14 Weeks
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	2.5MOhm
Terminal Position	DUAL
Turn Off Delay Time	115 ns
Peak Reflow Temperature (Cel)	260
Input Capacitance (Ciss) (Max) @ Vds	5760pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	84nC @ 4.5V
JESD-30 Code	R-XDSO-C5
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 15A, 4.5V

Manufacturer	Vishay Siliconix
Terminal Form	C BEND
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	11A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	1.8W Ta
Turn Off Delay Time	46 ns
Packaging	Tape & Reel (TR)
Published	2009
Operating Temperature	-55°C~150°C TJ
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Terminal Position	DUAL
Mounting Type	Surface Mount
Mount	Surface Mount
Vgs(th) (Max) @ Id	3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
JESD-30 Code	R-XDSO-C5
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 18A, 10V
Time@Peak Reflow Temperature-Max (s)	40
Peak Reflow Temperature (Cel)	260
Rise Time	12ns
Vgs (Max)	±20V
Fall Time (Typ)	19 ns

Discrete Semiconductors