Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA
Number of Pins	4
Transistor Element Material	SILICON
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Terminal Position	BOTTOM
Factory Lead Time	15 Weeks
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Power Dissipation (Max)	500mW Ta
Terminal Form	BALL
Rds On (Max) @ Id, Vgs	90m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Pin Count	4
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
FET Type	P-Channel
Transistor Application	SWITCHING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	±8V
Continuous Drain Current (ID)	-2.6A
Gate to Source Voltage (Vgs)	8V
DS Breakdown Voltage-Min	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA
Number of Pins	4
Drive Voltage (Max Rds On, Min Rds On)	1.5V 4.5V
Power Dissipation (Max)	500mW Ta
Turn Off Delay Time	25 ns
Number of Elements	1
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Contact Plating	Tin
Factory Lead Time	21 Weeks
Gate Charge (Qg) (Max) @ Vgs	8nC @ 8V
Rise Time	12ns
Time@Peak Reflow Temperature-Max (s)	30
Power Dissipation	900mW
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	72m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	245pF @ 10V
ECCN Code	EAR99
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Vgs (Max)	±8V
Fall Time (Typ)	7 ns
Continuous Drain Current (ID)	2.1A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
Peak Reflow Temperature (Cel)	260
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Factory Lead Time	30 Weeks
Mounting Type	Surface Mount
Package / Case	4-XFBGA
Current - Continuous Drain (Id) @ 25℃	2.7A Tc
Drive Voltage (Max Rds On, Min Rds On)	1.5V 4.5V
Power Dissipation (Max)	900mW Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen III
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	95m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	±8V
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Turn Off Delay Time	115 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	30-XFBGA
Number of Pins	30
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	7.7A Ta
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Terminal Form	BALL
Factory Lead Time	21 Weeks
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	30
ECCN Code	EAR99
Terminal Position	BOTTOM
Power Dissipation (Max)	660mW Ta
Peak Reflow Temperature (Cel)	260
Gate Charge (Qg) (Max) @ Vgs	180nC @ 8V
Rise Time	40ns
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	35 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 10V
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	SI8851
Vgs (Max)	±8V
Fall Time (Typ)	35 ns
Continuous Drain Current (ID)	16.7A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V

Discrete Semiconductors