Showing 14881–14892 of 15245 results
Vishay Siliconix SIB412DK-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SC-75-6L |
| Supplier Device Package |
PowerPAK® SC-75-6L Single |
| Weight |
95.991485mg |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
2.4W Ta 13W Tc |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
34mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Turn Off Delay Time |
50 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
9A |
| Rds On (Max) @ Id, Vgs |
34mOhm @ 6.6A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
535pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
10.16nC @ 5V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Turn On Delay Time |
6.6 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
535pF |
| Drain to Source Resistance |
34mOhm |
| Rds On Max |
34 mΩ |
| Height |
750μm |
| Length |
1.6mm |
| Width |
1.6mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIB412DK-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
PowerPAK® SC-75-6L |
| Number of Pins |
6 |
| Supplier Device Package |
PowerPAK® SC-75-6L Single |
| Weight |
95.991485mg |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
2.4W Ta 13W Tc |
| Turn Off Delay Time |
50 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
34mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
-4.5A |
| Turn On Delay Time |
6.6 ns |
| Rds On (Max) @ Id, Vgs |
34mOhm @ 6.6A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
535pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
10.16nC @ 5V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
14 ns |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Power Dissipation |
2.4W |
| Dual Supply Voltage |
20V |
| Input Capacitance |
535pF |
| Drain to Source Resistance |
34mOhm |
| Rds On Max |
34 mΩ |
| Nominal Vgs |
-1.5 V |
| Height |
750μm |
| Length |
1.6mm |
| Width |
1.6mm |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIB417AEDK-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Cut Tape (CT) |
| Package / Case |
PowerPAK® SC-75-6L |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.4W Ta 13W Tc |
| Turn Off Delay Time |
32 ns |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
32mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
878pF @ 4V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.4W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
32m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
18.5nC @ 5V |
| Rise Time |
27ns |
| JESD-30 Code |
S-PDSO-N3 |
| Vgs (Max) |
±5V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
5V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
8V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SIB437EDKT-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
690 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® TSC-75-6 |
| Number of Pins |
6 |
| Weight |
95.991485mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Number of Elements |
1 |
| JESD-30 Code |
S-PDSO-N3 |
| Factory Lead Time |
15 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Pin Count |
6 |
| Power Dissipation (Max) |
2.4W Ta 13W Tc |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
8V |
| Vgs (Max) |
±5V |
| Power Dissipation |
2.4W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
90 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
34m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 4.5V |
| Rise Time |
170ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
630 ns |
| Continuous Drain Current (ID) |
7.5A |
| Threshold Voltage |
-350mV |
| Gate to Source Voltage (Vgs) |
5V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.034Ohm |
| Drain to Source Breakdown Voltage |
-8V |
| Pulsed Drain Current-Max (IDM) |
25A |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIE802DF-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2015 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
1.9mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
10 |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
30V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 23.6A, 10V |
| Vgs(th) (Max) @ Id |
2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7000pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| JESD-30 Code |
R-XDSO-N4 |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
42.7A |
| DS Breakdown Voltage-Min |
30V |
| Height |
800μm |
| Length |
6.15mm |
| Width |
5.16mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIE806DF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Turn Off Delay Time |
85 ns |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-N4 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.7m Ω @ 25A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
41.3A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
60A |
| Drain-source On Resistance-Max |
0.0021Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
125 mJ |
| Radiation Hardening |
No |
| Pin Count |
10 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIE808DF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Supplier Device Package |
10-PolarPAK® (L) |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Turn Off Delay Time |
55 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Factory Lead Time |
27 Weeks |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Rise Time |
55ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
45A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
8.8nF |
| Drain to Source Resistance |
1.6mOhm |
| Rds On Max |
1.6 Ω |
| Radiation Hardening |
No |
| Power Dissipation |
5.2W |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIE810DF-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2015 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
10 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
20MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-XDSO-N4 |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
10 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
70ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
1.3V |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
45A |
| Drain to Source Breakdown Voltage |
20V |
| Avalanche Energy Rating (Eas) |
36 mJ |
| Height |
800μm |
| Length |
6.15mm |
| Width |
5.16mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIE810DF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-XDSO-N4 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 25A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
45A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.0027Ohm |
| DS Breakdown Voltage-Min |
20V |
| Avalanche Energy Rating (Eas) |
36 mJ |
| Radiation Hardening |
No |
| Pin Count |
10 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIE812DF-T1-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Pin Count |
10 |
| Mounting Type |
Surface Mount |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Turn Off Delay Time |
60 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
2.6MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8300pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
15ns |
| Number of Channels |
1 |
| JESD-30 Code |
R-XDSO-N4 |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
2.3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
33A |
| Drain to Source Breakdown Voltage |
40V |
| Height |
800μm |
| Length |
6.15mm |
| Width |
5.16mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SIE818DF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
10-PolarPAK® (L) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 125W Tc |
| Turn Off Delay Time |
40 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
14 Weeks |
| Published |
2015 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE MATTE TIN |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
3200pF @ 38V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Pin Count |
10 |
| JESD-30 Code |
R-XDSO-N4 |
| Rise Time |
150ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
79A |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIE844DF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2016 |
| Package / Case |
10-PolarPAK® (U) |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.2W Ta 25W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE MATTE TIN |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Pin Count |
10 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 12.1A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2150pF @ 15V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
20.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
44.5A |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Avalanche Energy Rating (Eas) |
31 mJ |
| Radiation Hardening |
No |
| JESD-30 Code |
R-XDSO-N4 |
| RoHS Status |
ROHS3 Compliant |