Showing 14917–14928 of 15245 results
Vishay Siliconix SIHF30N60E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
37W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Channels |
1 |
| Factory Lead Time |
14 Weeks |
| Turn Off Delay Time |
63 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
E |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
125mOhm |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
29A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
32ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
65A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIHF5N50D-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
14 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Continuous Drain Current (ID) |
5.3A |
| Threshold Voltage |
3V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
325pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
11 ns |
| Turn On Delay Time |
12 ns |
| Case Connection |
ISOLATED |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Height |
9.8mm |
| Length |
10.63mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHF6N40D-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
14 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation |
30W |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation (Max) |
30W Tc |
| Case Connection |
ISOLATED |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
311pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
6A |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
1Ohm |
| Drain to Source Breakdown Voltage |
400V |
| Height |
9.8mm |
| Length |
10.63mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHF7N60E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
E |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
31W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIHFB20N50K-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Reach Compliance Code |
unknown |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
280W Tc |
| Packaging |
Tube |
| Published |
2017 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
9 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain-source On Resistance-Max |
0.25Ohm |
| Pulsed Drain Current-Max (IDM) |
80A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
330 mJ |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
RoHS Compliant |
Vishay Siliconix SIHFL9014TR-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-223 |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
14 Weeks |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
2W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
500mOhm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.8A |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHFS11N50A-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
yes |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1423pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.52Ohm |
| Pulsed Drain Current-Max (IDM) |
44A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
275 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SIHG21N65EF-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
208W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
21 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
106nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2322pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
21A |
| JEDEC-95 Code |
TO-247AC |
| Drain-source On Resistance-Max |
0.18Ohm |
| Pulsed Drain Current-Max (IDM) |
53A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
367 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHG22N60E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
59 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247AC |
| Weight |
38.000013g |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation |
227W |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
180mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
227W Tc |
| Turn On Delay Time |
18 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1920pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
68ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
54 ns |
| Continuous Drain Current (ID) |
21A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
180mOhm @ 11A, 10V |
| Input Capacitance |
1.92nF |
| Drain to Source Resistance |
180mOhm |
| Rds On Max |
180 mΩ |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIHG22N65E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
73 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power Dissipation (Max) |
227W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Rise Time |
33ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2415pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
38 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
22A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
4V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
56A |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
227W |
| Lead Free |
Lead Free |
Vishay Siliconix SIHG23N60E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Terminations |
3 |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
227W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Temperature |
-55°C~150°C TA |
| Packaging |
Tube |
| Published |
2017 |
| Series |
E |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
158m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2418pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Resistance |
158mOhm |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
23A |
| JEDEC-95 Code |
TO-247AC |
| Pulsed Drain Current-Max (IDM) |
63A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
353 mJ |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHG24N65E-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
70 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247AC |
| Weight |
38.000013g |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
19 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
145mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation (Max) |
250W Tc |
| Power Dissipation |
250W |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
145mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2740pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
122nC @ 10V |
| Rise Time |
84ns |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
69 ns |
| Continuous Drain Current (ID) |
24A |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Input Capacitance |
2.74nF |
| Drain to Source Resistance |
145mOhm |
| Rds On Max |
145 mΩ |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |