Showing 14929–14940 of 15245 results
Vishay Siliconix SIHG24N65EF-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2017 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247AC |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
21 Weeks |
| Part Status |
Active |
| Series |
E |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
156mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2774pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
122nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHG25N50E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
57 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
145mOhm |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
250W Tc |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
36ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
145m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1980pF @ 100V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
26A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Avalanche Energy Rating (Eas) |
273 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHG35N60E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
E |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
94m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2760pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
132nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHG47N65E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
417W Tc |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Element Configuration |
Single |
| Number of Elements |
1 |
| Turn Off Delay Time |
156 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
650V |
| Power Dissipation |
417W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
72m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5682pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
273nC @ 10V |
| Rise Time |
87ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
103 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
47A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.072Ohm |
| DS Breakdown Voltage-Min |
650V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
47 ns |
| Lead Free |
Lead Free |
Vishay Siliconix SIHG73N60AE-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
417W Tc |
| Turn Off Delay Time |
212 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
E |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
14 Weeks |
| Turn On Delay Time |
43 ns |
| Power Dissipation |
417W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 36.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
394nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
25.11mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHH11N60E-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
114W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
339m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1076pF @ 100V |
| JESD-30 Code |
S-PSSO-N4 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
11A |
| Drain-source On Resistance-Max |
0.339Ohm |
| Pulsed Drain Current-Max (IDM) |
27A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
127 mJ |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Vishay Siliconix SIHH11N60EF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
21 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
114W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
357m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1078pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
11A |
| Threshold Voltage |
4V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHH11N65E-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
130W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Factory Lead Time |
18 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
363m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1257pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHH20N50E-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
E |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
174W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
147m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2063pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHH21N65EF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
156W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
21 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2396pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
102nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
S-PSSO-N4 |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
19.8A |
| Threshold Voltage |
4V |
| Pulsed Drain Current-Max (IDM) |
53A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
353 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHH26N60E-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power Dissipation (Max) |
202W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
600V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
135m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2815pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
116nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
25A |
| JESD-30 Code |
S-PSSO-N4 |
| Threshold Voltage |
4V |
| Drain-source On Resistance-Max |
0.135Ohm |
| Pulsed Drain Current-Max (IDM) |
50A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
353 mJ |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SIHH27N60EF-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
E |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Current - Continuous Drain (Id) @ 25℃ |
29A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
202W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2609pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |