Showing 14941–14952 of 15245 results
Vishay Siliconix SIHJ6N65E-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
4 |
| Current - Continuous Drain (Id) @ 25℃ |
5.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
74W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Factory Lead Time |
18 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
868m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
596pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
5.6A |
| Threshold Voltage |
2V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHP10N40D-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Elements |
1 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Number of Terminations |
3 |
| Factory Lead Time |
13 Weeks |
| Power Dissipation (Max) |
147W Tc |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Channels |
1 |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
526pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
5V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Drain to Source Breakdown Voltage |
400V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHP10N40D-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
147W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
8 Weeks |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Number of Elements |
1 |
| Power Dissipation |
147W |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
3V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
526pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
14 ns |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Drain to Source Breakdown Voltage |
400V |
| Height |
9.01mm |
| Length |
10.51mm |
| Width |
4.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHP12N50C-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
23 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
555mOhm |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
260 |
| Power Dissipation (Max) |
208W Tc |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
35ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
208W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
555m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1375pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
500V |
| Pulsed Drain Current-Max (IDM) |
28A |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIHP12N60E-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
147W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
19 Weeks |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
380mOhm |
| Max Operating Temperature |
150°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
19 ns |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
937pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
19ns |
| Drain to Source Voltage (Vdss) |
600V |
| Element Configuration |
Single |
| Power Dissipation |
147W |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Input Capacitance |
937pF |
| Drain to Source Resistance |
320mOhm |
| Rds On Max |
380 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIHP15N50E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14.5A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
156W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
14.5A |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1162pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.28Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
28A |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SIHP15N60E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
180W Tc |
| Packaging |
Tube |
| Published |
2014 |
| Series |
E |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
280mOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
280mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
78nC @ 10V |
| Rise Time |
51ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
15A |
| Turn On Delay Time |
17 ns |
| Power Dissipation |
180W |
| Input Capacitance |
1.35nF |
| Drain to Source Resistance |
280mOhm |
| Rds On Max |
280 mΩ |
| Height |
9.01mm |
| Length |
10.51mm |
| Width |
4.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Vishay Siliconix SIHP15N65E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
34W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Turn Off Delay Time |
48 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
24ns |
| Vgs (Max) |
±30V |
| Power Dissipation |
34W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1640pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
15A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
4V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
286 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIHP17N60D-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
277.8W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
340m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1780pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Rise Time |
56ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
17A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Pulsed Drain Current-Max (IDM) |
48A |
| DS Breakdown Voltage-Min |
600V |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHP20N50E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
48 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Factory Lead Time |
18 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power Dissipation (Max) |
179W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
184m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1640pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
27ns |
| Drain to Source Voltage (Vdss) |
500V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
17 ns |
| Continuous Drain Current (ID) |
19A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
42A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
204 mJ |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHP22N60AE-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
E |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
179W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1451pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIHP22N60E-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
59 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
18 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
180mOhm |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Number of Channels |
1 |
| Power Dissipation (Max) |
227W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
21A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1920pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
68ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
54 ns |
| Power Dissipation |
227W |
| Turn On Delay Time |
18 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
56A |
| DS Breakdown Voltage-Min |
600V |
| Height |
15.49mm |
| Length |
10.51mm |
| Width |
4.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |