Manufacturer	Vishay Siliconix
Element Configuration	Single
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	50A Tc
Drive Voltage (Max Rds On, Min Rds On)	2.5V 10V
Number of Elements	1
Power Dissipation (Max)	5W Ta 39W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Turn Off Delay Time	300 ns
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	R-PDSO-C5
Number of Channels	1
Mount	Surface Mount
Factory Lead Time	14 Weeks
Fall Time (Typ)	100 ns
Continuous Drain Current (ID)	50A
Turn On Delay Time	140 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9080pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	310nC @ 10V
Rise Time	130ns
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	±12V
Power Dissipation	5W
Operating Mode	ENHANCEMENT MODE

Manufacturer	Vishay Siliconix
Power Dissipation (Max)	5W Ta 56.8W Tc
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	40A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Terminal Position	DUAL
Factory Lead Time	14 Weeks
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Number of Elements	1
Terminal Form	C BEND
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4620pF @ 15V
JESD-30 Code	R-PDSO-C5
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 13A, 10V
Peak Reflow Temperature (Cel)	240
Time@Peak Reflow Temperature-Max (s)	40
Gate Charge (Qg) (Max) @ Vgs	153nC @ 10V
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±25V
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	25V

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	60A Tc
Drive Voltage (Max Rds On, Min Rds On)	2.5V 10V
Number of Elements	1
Power Dissipation (Max)	6.25W Ta 104W Tc
Terminal Form	C BEND
Factory Lead Time	14 Weeks
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Terminal Position	DUAL
Turn Off Delay Time	123 ns
Peak Reflow Temperature (Cel)	260
Input Capacitance (Ciss) (Max) @ Vds	8130pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	97nC @ 4.5V
JESD-30 Code	R-XDSO-C5
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Time@Peak Reflow Temperature-Max (s)	40

Manufacturer	Vishay Siliconix
Power Dissipation (Max)	5.2W Ta 69W Tc
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Supplier Device Package	PowerPAK® SO-8
Weight	506.605978mg
Current - Continuous Drain (Id) @ 25℃	50A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Channels	1
Factory Lead Time	14 Weeks
Turn Off Delay Time	42 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Elements	1
Element Configuration	Single
Fall Time (Typ)	40 ns
Continuous Drain Current (ID)	50A
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	85ns
Drain to Source Voltage (Vdss)	40V
Vgs (Max)	±20V
Power Dissipation	5.2W
Turn On Delay Time	28 ns
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Input Capacitance	3.35nF
Drain to Source Resistance	3.1mOhm
Rds On Max	3.8 mΩ

Discrete Semiconductors