Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25℃	10.9A Ta 38.7A Tc
Drive Voltage (Max Rds On, Min Rds On)	7.5V 10V
Power Dissipation (Max)	5W Ta 62.5W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Part Status	Active
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drain to Source Voltage (Vdss)	100V
Vgs (Max)	±20V
Drain to Source Resistance	14.5mOhm
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Manufacturer Package Identifier	S17-0173-Single
Current - Continuous Drain (Id) @ 25℃	35.4A Tc
Drive Voltage (Max Rds On, Min Rds On)	7.5V 10V
Power Dissipation (Max)	104W Tc
Turn Off Delay Time	20 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	ThunderFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation	6.25W
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	31.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	8.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Max Junction Temperature (Tj)	150°C
Height	1.17mm
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Packaging	Tape & Reel (TR)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	60A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	6.25W Ta 104W Tc
Peak Reflow Temperature (Cel)	260
Operating Temperature	-55°C~150°C TJ
Published	2011
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	2.7mOhm
Terminal Position	DUAL
Terminal Form	C BEND
Mount	Surface Mount
Factory Lead Time	14 Weeks
Input Capacitance (Ciss) (Max) @ Vds	4365pF @ 30V
Pin Count	8
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Drain to Source Voltage (Vdss)	60V
Time@Peak Reflow Temperature-Max (s)	30
Vgs (Max)	±20V

Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Surface Mount	YES
Transistor Element Material	SILICON
Manufacturer Package Identifier	S17-0173-Single
Current - Continuous Drain (Id) @ 25℃	100A Tc
Drive Voltage (Max Rds On, Min Rds On)	7.5V 10V
Number of Elements	1
Power Dissipation (Max)	104W Tc
Reach Compliance Code	unknown
Factory Lead Time	14 Weeks
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Turn Off Delay Time	30 ns
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds	5150pF @ 40V
Gate Charge (Qg) (Max) @ Vgs	81nC @ 7.5V
Number of Channels	1
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250μA
JESD-30 Code	R-PDSO-N5
Configuration	SINGLE WITH BUILT-IN DIODE
Vgs (Max)	±20V
Continuous Drain Current (ID)	32.8A
Gate to Source Voltage (Vgs)	20V

Discrete Semiconductors