Showing 15001–15012 of 15245 results
Vishay Siliconix SIR840DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Weight |
506.605978mg |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Channels |
1 |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
30V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIR846DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Turn Off Delay Time |
36 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
7.8mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| JESD-30 Code |
R-XDSO-C5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.25W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2870pF @ 50V |
| Rise Time |
18ns |
| Vgs (Max) |
±20V |
| Pin Count |
8 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain to Source Breakdown Voltage |
100V |
| Nominal Vgs |
3.5 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SIR871DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Power Dissipation (Max) |
89W Tc |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
3395pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.6V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
48A |
| Drain-source On Resistance-Max |
0.02Ohm |
| Pulsed Drain Current-Max (IDM) |
300A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
61 mJ |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SIR872ADP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
53.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Terminal Form |
C BEND |
| Turn Off Delay Time |
15 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2015 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
18MOhm |
| Terminal Position |
DUAL |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.25W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1286pF @ 75V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
150V |
| Peak Reflow Temperature (Cel) |
240 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
53.7A |
| Threshold Voltage |
4.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-C5 |
| Lead Free |
Lead Free |
Vishay Siliconix SIR876DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5W Ta 62.5W Tc |
| Turn Off Delay Time |
36 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Published |
2015 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
1640pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 250μA |
| Pin Count |
8 |
| JESD-30 Code |
R-XDSO-C5 |
| Rise Time |
31ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
40A |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIRA00DP-T1-RE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
104W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Factory Lead Time |
14 Weeks |
| Part Status |
Active |
| Series |
TrenchFET® |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -16V |
Vishay Siliconix SIRA02DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
5W Ta 71.4W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| JESD-30 Code |
R-PDSO-C5 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Continuous Drain Current (ID) |
50A |
| Threshold Voltage |
1.1V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
31 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6150pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
117nC @ 10V |
| Vgs (Max) |
+20V, -16V |
| Fall Time (Typ) |
16 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.002Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Nominal Vgs |
1.1 V |
| Height |
1.12mm |
| Length |
6.25mm |
| Width |
5.26mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Power Dissipation |
5W |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIRA10DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
5W Ta 40W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| JESD-30 Code |
R-PDSO-F5 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
1.1V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2425pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Vgs (Max) |
+20V, -16V |
| Fall Time (Typ) |
20 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
60A |
| Drain-source On Resistance-Max |
0.0037Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Height |
1.12mm |
| Length |
6.25mm |
| Width |
5.26mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Power Dissipation |
5W |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIRA20DP-T1-RE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25℃ |
81.7A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
6.25W Ta 104W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.58m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10850pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
+16V, -12V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIRA32DP-T1-RE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Manufacturer Package Identifier |
S17-0173-Single |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
65.7W Tc |
| Turn Off Delay Time |
24 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen IV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
14 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Number of Channels |
1 |
| Power Dissipation |
5W |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4450pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
83nC @ 10V |
| Vgs (Max) |
+16V, -12V |
| Continuous Drain Current (ID) |
51A |
| Drain to Source Breakdown Voltage |
25V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.17mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIRA52DP-T1-RE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Max Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Supplier Device Package |
PowerPAK® SO-8 |
| Manufacturer Package Identifier |
S17-0173-Single |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
48W Tc |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen IV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
14 Weeks |
| Number of Channels |
1 |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
4.8W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.7mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7150pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
+20V, -16V |
| Continuous Drain Current (ID) |
39.6A |
| Drain to Source Breakdown Voltage |
40V |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
1.4mOhm |
| Height |
1.17mm |
Vishay Siliconix SIRA66DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
62.5W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
1.9mOhm |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.3m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -16V |
| RoHS Status |
ROHS3 Compliant |