Showing 15013–15024 of 15245 results
Vishay Siliconix SIRC04DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Manufacturer Package Identifier |
S17-0173-Single |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen IV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
unknown |
| Number of Channels |
1 |
| Power Dissipation |
5W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.45m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2850pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Vgs (Max) |
+20V, -16V |
| Continuous Drain Current (ID) |
33.6A |
| Drain to Source Breakdown Voltage |
30V |
| Max Junction Temperature (Tj) |
150°C |
| FET Feature |
Schottky Diode (Body) |
| Height |
1.17mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIRC16DP-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
54.3W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen IV |
| Part Status |
Active |
| Factory Lead Time |
14 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.96m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5150pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
+20V, -16V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIS402DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6mOhm |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| JESD-30 Code |
S-XDSO-C5 |
| Continuous Drain Current (ID) |
35A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
70A |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Vishay Siliconix SIS410DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
4.8mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Power Dissipation |
5.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
15ns |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
35A |
| JESD-30 Code |
S-PDSO-C5 |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
22A |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1.04mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SIS412DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 15.6W Tc |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
24MOhm |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Published |
2013 |
| JESD-30 Code |
S-XDSO-C5 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
8.7A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
15.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 7.8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
435pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1 V |
| Height |
1.17mm |
| Length |
3.05mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SIS413DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Turn Off Delay Time |
45 ns |
| Element Configuration |
Single |
| Factory Lead Time |
14 Weeks |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| JESD-30 Code |
S-PDSO-C5 |
| Number of Channels |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
-14.7A |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.4m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4280pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Power Dissipation |
3.7W |
| Case Connection |
DRAIN |
| Threshold Voltage |
-2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0094Ohm |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.17mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIS415DNT-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
82 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2014 |
| Series |
TrenchFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
5460pF @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.7W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
38ns |
| Reach Compliance Code |
unknown |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
35A |
| Gate to Source Voltage (Vgs) |
-1.5V |
| Drain-source On Resistance-Max |
0.004Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| JESD-30 Code |
S-PDSO-F5 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIS429DNT-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
27.8W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
21m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SIS434DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
40 ns |
| Peak Reflow Temperature (Cel) |
250 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2015 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
7.6mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Pin Count |
8 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.6m Ω @ 16.2A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1530pF @ 20V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
35A |
| Threshold Voltage |
2.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-C5 |
| Lead Free |
Lead Free |
Vishay Siliconix SIS452DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Turn Off Delay Time |
25 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.25m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Pin Count |
8 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
35A |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
12V |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| JESD-30 Code |
S-PDSO-C5 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIS472ADN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Resistance |
8.5mOhm |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Surface Mount |
YES |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
28W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
14 Weeks |
| Configuration |
Single |
| Reach Compliance Code |
unknown |
| Number of Channels |
1 |
| Power Dissipation |
3.5W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1515pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
24A |
| RoHS Status |
RoHS Compliant |
Vishay Siliconix SIS472BDN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Supplier Device Package |
PowerPAK® 1212-8 |
| Current - Continuous Drain (Id) @ 25℃ |
15.3A Ta 38.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.2W Ta 19.8W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen IV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
21.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -16V |
| RoHS Status |
ROHS3 Compliant |