Showing 15025–15036 of 15245 results
Vishay Siliconix SIS698DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
19.8W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
195m Ω @ 2.5A, 10V |
| JESD-30 Code |
R-PDSO-C5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.2W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
210pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6.9A |
| RoHS Status |
RoHS Compliant |
Vishay Siliconix SIS776DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-50°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 52W Tc |
| Pin Count |
8 |
| Factory Lead Time |
15 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
SkyFET®, TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Turn Off Delay Time |
20 ns |
| JESD-30 Code |
S-XDSO-C5 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.2m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
11ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
35A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0062Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| FET Feature |
Schottky Diode (Body) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIS778DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Obsolete |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
52W Tc |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-50°C~150°C TJ |
| JESD-30 Code |
S-XDSO-C5 |
| Packaging |
Tape & Reel (TR) |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Package / Case |
PowerPAK® 1212-8 |
| Mounting Type |
Surface Mount |
| Rise Time |
12ns |
| Number of Channels |
1 |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1390pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
42.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
35A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.005Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| FET Feature |
Schottky Diode (Body) |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
RoHS Compliant |
Vishay Siliconix SIS892ADN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 52W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
16 ns |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
33MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
C BEND |
| JESD-30 Code |
S-PDSO-C5 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19.5nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
7.4A |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
5 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.12mm |
| Length |
3.4mm |
| Width |
3.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3.7W |
| Lead Free |
Lead Free |
Vishay Siliconix SISA12ADN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Form |
C BEND |
| Power Dissipation (Max) |
3.5W Ta 28W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
3.5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2070pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -16V |
| JESD-30 Code |
S-PDSO-C5 |
| Continuous Drain Current (ID) |
25A |
| Threshold Voltage |
1.1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0043Ohm |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SISA14DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Resistance |
5.1mOhm |
| Factory Lead Time |
14 Weeks |
| Packaging |
Cut Tape (CT) |
| Published |
2016 |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
3.57W Ta 26.5W Tc |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
S-PDSO-C5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
C BEND |
| Peak Reflow Temperature (Cel) |
240 |
| Input Capacitance (Ciss) (Max) @ Vds |
1450pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -16V |
| Continuous Drain Current (ID) |
20A |
| Pulsed Drain Current-Max (IDM) |
80A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
11.25 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SISA26DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8S |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
39W Tc |
| Turn Off Delay Time |
16 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen IV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.65m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2247pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Vgs (Max) |
+16V, -12V |
| Continuous Drain Current (ID) |
29.1A |
| Drain to Source Breakdown Voltage |
25V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.17mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SISS27ADN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8S |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
57W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® Gen III |
| Part Status |
Active |
| Factory Lead Time |
14 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4660pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SISS98DN-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Current - Continuous Drain (Id) @ 25℃ |
14.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Power Dissipation (Max) |
57W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
ThunderFET® |
| Part Status |
Active |
| Factory Lead Time |
14 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
608pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 7.5V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SIUD412ED-T1-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
1.25W Ta |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 0806 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Terminal Position |
DUAL |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Terminal Form |
NO LEAD |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
340m Ω @ 500mA, 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
21pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
0.71nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±5V |
| Drain-source On Resistance-Max |
0.34Ohm |
| DS Breakdown Voltage-Min |
12V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQ1421EDH-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.3W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Number of Elements |
1 |
| Packaging |
Digi-Reel® |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
355pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
5.4nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.6A |
| Threshold Voltage |
-2V |
| Drain-source On Resistance-Max |
0.29Ohm |
| Feedback Cap-Max (Crss) |
35 pF |
| REACH SVHC |
No SVHC |
| Reach Compliance Code |
unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQ2308CES-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
12 ns |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
205pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
5.3nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 2.3A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2.3A |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-236AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1.12mm |
| RoHS Status |
ROHS3 Compliant |