Manufacturer	Vishay Siliconix
Part Status	Obsolete
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Current - Continuous Drain (Id) @ 25℃	4.6A Tc
Number of Elements	1
Turn Off Delay Time	25 ns
Packaging	Cut Tape (CT)
Published	2013
Series	TrenchFET®
Time@Peak Reflow Temperature-Max (s)	40
Mount	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	3W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Pbfree Code	yes
Base Part Number	SQ2319
Rise Time	15ns
Drain to Source Voltage (Vdss)	40V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Pin Count	3
Element Configuration	Single
Fall Time (Typ)	25 ns
Continuous Drain Current (ID)	-4.6A
Threshold Voltage	-2V

Manufacturer	Vishay Siliconix
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25℃	2.2A Tc
Drive Voltage (Max Rds On, Min Rds On)	6V 10V
Number of Elements	1
Power Dissipation (Max)	3W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Power Dissipation	3W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Drain to Source Voltage (Vdss)	80V
Vgs (Max)	±20V
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	20V
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Part Status	Obsolete
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Current - Continuous Drain (Id) @ 25℃	4.4A Tc
Number of Elements	1
Turn Off Delay Time	10 ns
Packaging	Digi-Reel®
Published	2008
Time@Peak Reflow Temperature-Max (s)	40
Series	TrenchFET®
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	3W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Mount	Surface Mount
Contact Plating	Tin
Rise Time	11ns
Element Configuration	Single
Power Dissipation	3W
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	4.4A
Pin Count	3
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.066Ohm
Drain to Source Breakdown Voltage	60V

Manufacturer	Vishay Siliconix
Element Configuration	Single
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Turn Off Delay Time	20 ns
Operating Temperature	-55°C~175°C TJ
Power Dissipation (Max)	5W Tc
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Mount	Surface Mount
Factory Lead Time	12 Weeks
Continuous Drain Current (ID)	8A
Threshold Voltage	2V
Rds On (Max) @ Id, Vgs	17.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1005pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn On Delay Time	9 ns
Power Dissipation	5W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.005nF
Drain to Source Resistance	17.5mOhm
Rds On Max	17.5 mΩ
Radiation Hardening	No

Discrete Semiconductors