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Discrete Semiconductors
Vishay Siliconix SQ4425EY-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-SOIC |
Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
6.8W Tc |
Turn Off Delay Time |
54 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Power Dissipation |
6.8W |
Turn On Delay Time |
12 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
12mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3630pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
Rise Time |
9ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
13 ns |
Continuous Drain Current (ID) |
18A |
Gate to Source Voltage (Vgs) |
20V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Vishay Siliconix SQ4431EY-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation (Max) |
6W Tc |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-SO |
Weight |
506.605978mg |
Current - Continuous Drain (Id) @ 25℃ |
10.8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Channels |
1 |
Factory Lead Time |
12 Weeks |
Turn Off Delay Time |
33 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Element Configuration |
Single |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
10.8A |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1265pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Rise Time |
12ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Power Dissipation |
6W |
Turn On Delay Time |
10 ns |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Input Capacitance |
1.265nF |
Drain to Source Resistance |
30mOhm |
Rds On Max |
30 mΩ |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQ4483EY-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Power Dissipation (Max) |
7W Tc |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Factory Lead Time |
12 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
113nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
8.5m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Vgs (Max) |
±20V |
JEDEC-95 Code |
MS-012AA |
Drain Current-Max (Abs) (ID) |
30A |
Drain-source On Resistance-Max |
0.0085Ohm |
DS Breakdown Voltage-Min |
30V |
Feedback Cap-Max (Crss) |
770 pF |
JESD-30 Code |
R-PDSO-G8 |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQ4850EY-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Supplier Device Package |
8-SO |
Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
6.8W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2017 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
22mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1250pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQ7414AEN-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® 1212-8 |
Number of Pins |
8 |
Manufacturer Package Identifier |
SQ7414AEN-T1_GE3 |
Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Turn Off Delay Time |
20 ns |
Operating Temperature |
-55°C~175°C TJ |
Power Dissipation (Max) |
62W Tc |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
Series |
TrenchFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Resistance |
22mOhm |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
16A |
Power Dissipation |
62W |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
26m Ω @ 5.7A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
980pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
175°C |
Height |
1.17mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Vishay Siliconix SQ7414AENW-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
ECCN Code |
EAR99 |
Package / Case |
PowerPAK® 1212-8 |
Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
62W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Reach Compliance Code |
unknown |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
23m Ω @ 8.7A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1590pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQ9407EY-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Max Operating Temperature |
175°C |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Supplier Device Package |
8-SO |
Weight |
506.605978mg |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Current - Continuous Drain (Id) @ 25℃ |
4.6A Tc |
Power Dissipation (Max) |
3.75W Tc |
Turn Off Delay Time |
36 ns |
Operating Temperature |
-55°C~175°C TA |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
Rise Time |
13ns |
Power Dissipation |
3.75W |
Turn On Delay Time |
11 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
85mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1140pF @ 30V |
Number of Channels |
1 |
Min Operating Temperature |
-55°C |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
-4.6A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Resistance |
115mOhm |
Element Configuration |
Single |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD10N30-330H_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
107W Tc |
Turn Off Delay Time |
20 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Factory Lead Time |
12 Weeks |
Power Dissipation |
107W |
Number of Channels |
1 |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
330m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id |
4.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2190pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
Vgs (Max) |
±30V |
Continuous Drain Current (ID) |
10A |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
300V |
Max Junction Temperature (Tj) |
175°C |
Height |
2.507mm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD19P06-60L_T4GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
46W Tc |
Turn Off Delay Time |
25 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Power Dissipation |
46W |
Turn On Delay Time |
7 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
55mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1490pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
-20A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-60V |
Max Junction Temperature (Tj) |
175°C |
Drain to Source Resistance |
46mOhm |
Height |
2.507mm |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQD23N06-31L_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
TO-252, (D-Pak) |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
37W Tc |
Power Dissipation |
3W |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
Series |
TrenchFET® |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Element Configuration |
Single |
Turn Off Delay Time |
30 ns |
Turn On Delay Time |
8 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
845pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
15ns |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
25 ns |
Continuous Drain Current (ID) |
23A |
Threshold Voltage |
2V |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
31mOhm @ 15A, 10V |
Input Capacitance |
845pF |
Drain to Source Resistance |
31mOhm |
Rds On Max |
31 mΩ |
Height |
2.39mm |
Length |
6.73mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix SQD40030E_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
14 Weeks |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Operating Temperature |
175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD40N06-25L-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Series |
TrenchFET® |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Turn Off Delay Time |
28 ns |
Operating Temperature |
-55°C~175°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Packaging |
Tape & Reel (TR) |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
22mOhm |
Max Power Dissipation |
1.4W |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
21 Weeks |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Pin Count |
4 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.4W |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
22m Ω @ 20A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Rise Time |
9ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
30A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Pulsed Drain Current-Max (IDM) |
100A |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
ROHS3 Compliant |