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Discrete Semiconductors
Vishay Siliconix SQD45N05-20L-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.5W Ta 75W Tc |
Turn Off Delay Time |
32 ns |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~175°C TJ |
Published |
2008 |
Series |
TrenchFET® |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
49 Weeks |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Pin Count |
4 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
18m Ω @ 20A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Rise Time |
10ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
7 ns |
Continuous Drain Current (ID) |
50A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.02Ohm |
Drain to Source Breakdown Voltage |
50V |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD50N04-5M6_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
71W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Reach Compliance Code |
unknown |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
50A |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD50P03-07_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
TO-252AA |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
136W Tc |
Turn Off Delay Time |
63 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2017 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Power Dissipation |
136W |
Turn On Delay Time |
11 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5490pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
Rise Time |
12ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
28 ns |
Continuous Drain Current (ID) |
50A |
Gate to Source Voltage (Vgs) |
20V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Vishay Siliconix SQD50P04-09L_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.437803g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
136W Tc |
Pin Count |
4 |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Series |
TrenchFET® |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Form |
GULL WING |
Turn Off Delay Time |
61 ns |
JESD-30 Code |
R-PSSO-G2 |
Rise Time |
15ns |
Drain to Source Voltage (Vdss) |
40V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
136W |
Case Connection |
DRAIN |
Turn On Delay Time |
13 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
9.4m Ω @ 17A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
6675pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
Number of Channels |
1 |
Element Configuration |
Single |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Continuous Drain Current (ID) |
50A |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0094Ohm |
DS Breakdown Voltage-Min |
40V |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD50P08-25L_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Number of Elements |
1 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Published |
2017 |
Packaging |
Tape & Reel (TR) |
Operating Temperature |
-55°C~175°C TJ |
Turn Off Delay Time |
71 ns |
Max Operating Temperature |
175°C |
Power Dissipation (Max) |
136W Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Supplier Device Package |
TO-252AA |
Number of Pins |
3 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Power Dissipation |
136W |
Drain to Source Voltage (Vdss) |
80V |
Radiation Hardening |
No |
Drain to Source Resistance |
25mOhm |
Gate to Source Voltage (Vgs) |
20V |
Continuous Drain Current (ID) |
50A |
Fall Time (Typ) |
16 ns |
Vgs (Max) |
±20V |
Rise Time |
11ns |
Min Operating Temperature |
-55°C |
Gate Charge (Qg) (Max) @ Vgs |
137nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
5350pF @ 25V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Rds On (Max) @ Id, Vgs |
25mOhm @ 10.5A, 10V |
FET Type |
P-Channel |
Turn On Delay Time |
10 ns |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD50P08-28_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
TO-252AA |
Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
136W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Power Dissipation |
136W |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
28mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
6035pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
Drain to Source Voltage (Vdss) |
80V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
48A |
Gate to Source Voltage (Vgs) |
20V |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQD70140EL_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
71W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Cut Tape (CT) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
15mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJ158EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
45W Tc |
Reach Compliance Code |
unknown |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Turn Off Delay Time |
22 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
45W |
Case Connection |
DRAIN |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
33m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
JESD-30 Code |
R-PSSO-G4 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
23A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.033Ohm |
Drain to Source Breakdown Voltage |
60V |
Pulsed Drain Current-Max (IDM) |
80A |
Max Junction Temperature (Tj) |
175°C |
Height |
1.267mm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJ401EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Part Status |
Active |
Published |
2017 |
Packaging |
Tape & Reel (TR) |
Operating Temperature |
-55°C~175°C TJ |
Turn Off Delay Time |
263 ns |
Power Dissipation (Max) |
83W Tc |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Elements |
1 |
Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
Supplier Device Package |
PowerPAK® SO-8 |
Number of Pins |
5 |
Package / Case |
PowerPAK® SO-8 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Min Operating Temperature |
-55°C |
Rise Time |
63ns |
Radiation Hardening |
No |
Gate to Source Voltage (Vgs) |
8V |
Continuous Drain Current (ID) |
32A |
Fall Time (Typ) |
166 ns |
Vgs (Max) |
±8V |
Drain to Source Voltage (Vdss) |
12V |
Gate Charge (Qg) (Max) @ Vgs |
164nC @ 4.5V |
Max Operating Temperature |
175°C |
Input Capacitance (Ciss) (Max) @ Vds |
10015pF @ 6V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Rds On (Max) @ Id, Vgs |
6mOhm @ 15A, 4.5V |
FET Type |
P-Channel |
Turn On Delay Time |
43 ns |
Power Dissipation |
83W |
RoHS Status |
RoHS Compliant |
Vishay Siliconix SQJ407EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
68W Tc |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
unknown |
Turn Off Delay Time |
72 ns |
JESD-30 Code |
R-PSSO-G4 |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
68W |
Case Connection |
DRAIN |
Turn On Delay Time |
23 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
4.4m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
10700pF @ 25V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
-60A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0044Ohm |
Drain to Source Breakdown Voltage |
-30V |
Avalanche Energy Rating (Eas) |
84 mJ |
Max Junction Temperature (Tj) |
175°C |
Height |
1.267mm |
RoHS Status |
RoHS Compliant |
Vishay Siliconix SQJ409EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
68W Tc |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Turn Off Delay Time |
75 ns |
JESD-30 Code |
R-PSSO-G4 |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
68W |
Case Connection |
DRAIN |
Turn On Delay Time |
23 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
7m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
11000pF @ 25V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
-60A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.007Ohm |
Drain to Source Breakdown Voltage |
-40V |
Avalanche Energy Rating (Eas) |
84 mJ |
Max Junction Temperature (Tj) |
175°C |
Height |
1.267mm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJ410EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Number of Pins |
5 |
Supplier Device Package |
PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
83W Tc |
Turn Off Delay Time |
40 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Power Dissipation |
83W |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.9mOhm @ 10.3A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
6210pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
Rise Time |
11ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
32A |
Gate to Source Voltage (Vgs) |
20V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |